CN116746012A - 半导体激光器元件 - Google Patents

半导体激光器元件 Download PDF

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Publication number
CN116746012A
CN116746012A CN202180091975.8A CN202180091975A CN116746012A CN 116746012 A CN116746012 A CN 116746012A CN 202180091975 A CN202180091975 A CN 202180091975A CN 116746012 A CN116746012 A CN 116746012A
Authority
CN
China
Prior art keywords
layer
semiconductor
type
semiconductor laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180091975.8A
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English (en)
Chinese (zh)
Inventor
久纳康光
山田笃志
永井洋希
中谷东吾
柳田直人
畑雅幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN116746012A publication Critical patent/CN116746012A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN202180091975.8A 2021-01-29 2021-12-22 半导体激光器元件 Pending CN116746012A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163143463P 2021-01-29 2021-01-29
US63/143,463 2021-01-29
PCT/JP2021/047705 WO2022163237A1 (ja) 2021-01-29 2021-12-22 半導体レーザ素子

Publications (1)

Publication Number Publication Date
CN116746012A true CN116746012A (zh) 2023-09-12

Family

ID=82654378

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180091975.8A Pending CN116746012A (zh) 2021-01-29 2021-12-22 半导体激光器元件

Country Status (4)

Country Link
US (1) US20230387662A1 (https=)
JP (1) JP7720334B2 (https=)
CN (1) CN116746012A (https=)
WO (1) WO2022163237A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6414976B1 (en) * 1998-07-15 2002-07-02 Sony Corporation Semiconductor light emitting device
JP2006269526A (ja) * 2005-03-22 2006-10-05 Fuji Photo Film Co Ltd 半導体レーザ装置および光通信装置
JP2010114202A (ja) * 2008-11-05 2010-05-20 Sony Corp 半導体レーザ素子
CN102097746A (zh) * 2009-12-11 2011-06-15 松下电器产业株式会社 半导体激光装置及其制造方法
JP2011159673A (ja) * 2010-01-29 2011-08-18 Jvc Kenwood Holdings Inc 半導体レーザ素子及び半導体レーザアレイ
JP2017139319A (ja) * 2016-02-03 2017-08-10 浜松ホトニクス株式会社 半導体レーザ素子
JP2018152430A (ja) * 2017-03-10 2018-09-27 住友電気工業株式会社 半導体レーザ
CN115362609A (zh) * 2020-04-06 2022-11-18 新唐科技日本株式会社 半导体激光装置以及半导体激光装置的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
JPH06302906A (ja) * 1993-04-12 1994-10-28 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JPH1168231A (ja) * 1997-08-25 1999-03-09 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
EP1583187B1 (en) * 2000-10-12 2007-07-04 FUJIFILM Corporation Semiconductor laser device with a current non-injection region near a resonator end face
JP4504610B2 (ja) * 2002-03-01 2010-07-14 株式会社日立製作所 リッジ型半導体レーザ素子
KR20060122615A (ko) * 2005-05-27 2006-11-30 삼성전자주식회사 질화물계 반도체 레이저 다이오드 및 그 제조방법
JP2010074131A (ja) * 2008-08-21 2010-04-02 Panasonic Corp 半導体発光素子及びその製造方法
JP2010123674A (ja) * 2008-11-18 2010-06-03 Panasonic Corp 半導体レーザ装置
JP2010278131A (ja) * 2009-05-27 2010-12-09 Panasonic Corp 半導体レーザ素子及びその製造方法
JP6943570B2 (ja) * 2015-02-12 2021-10-06 古河電気工業株式会社 半導体レーザ素子およびレーザ光照射装置
JP6801416B2 (ja) * 2016-12-08 2020-12-16 住友電気工業株式会社 量子カスケード半導体レーザ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6414976B1 (en) * 1998-07-15 2002-07-02 Sony Corporation Semiconductor light emitting device
JP2006269526A (ja) * 2005-03-22 2006-10-05 Fuji Photo Film Co Ltd 半導体レーザ装置および光通信装置
JP2010114202A (ja) * 2008-11-05 2010-05-20 Sony Corp 半導体レーザ素子
CN102097746A (zh) * 2009-12-11 2011-06-15 松下电器产业株式会社 半导体激光装置及其制造方法
JP2011159673A (ja) * 2010-01-29 2011-08-18 Jvc Kenwood Holdings Inc 半導体レーザ素子及び半導体レーザアレイ
JP2017139319A (ja) * 2016-02-03 2017-08-10 浜松ホトニクス株式会社 半導体レーザ素子
JP2018152430A (ja) * 2017-03-10 2018-09-27 住友電気工業株式会社 半導体レーザ
CN115362609A (zh) * 2020-04-06 2022-11-18 新唐科技日本株式会社 半导体激光装置以及半导体激光装置的制造方法

Also Published As

Publication number Publication date
WO2022163237A1 (ja) 2022-08-04
JPWO2022163237A1 (https=) 2022-08-04
JP7720334B2 (ja) 2025-08-07
US20230387662A1 (en) 2023-11-30

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