JP7692828B2 - 半導体装置、電子部品、及び電子機器 - Google Patents

半導体装置、電子部品、及び電子機器 Download PDF

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Publication number
JP7692828B2
JP7692828B2 JP2021532540A JP2021532540A JP7692828B2 JP 7692828 B2 JP7692828 B2 JP 7692828B2 JP 2021532540 A JP2021532540 A JP 2021532540A JP 2021532540 A JP2021532540 A JP 2021532540A JP 7692828 B2 JP7692828 B2 JP 7692828B2
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oxide
transistor
insulator
conductor
wiring
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JPWO2021009586A1 (cg-RX-API-DMAC7.html
JPWO2021009586A5 (cg-RX-API-DMAC7.html
Inventor
健 青木
義元 黒川
宗広 上妻
卓郎 金村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/5443—Sum of products
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F15/00—Digital computers in general; Data processing equipment in general
    • G06F15/76—Architectures of general purpose stored program computers
    • G06F15/78—Architectures of general purpose stored program computers comprising a single central processing unit
    • G06F15/7807—System on chip, i.e. computer system on a single chip; System in package, i.e. computer system on one or more chips in a single package
    • G06F15/7821—Tightly coupled to memory, e.g. computational memory, smart memory, processor in memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Neurology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biophysics (AREA)
  • Mathematical Physics (AREA)
  • Molecular Biology (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computational Mathematics (AREA)
  • Artificial Intelligence (AREA)
  • Physiology (AREA)
  • Neurosurgery (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Software Systems (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Databases & Information Systems (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2021532540A 2019-07-12 2020-06-29 半導体装置、電子部品、及び電子機器 Active JP7692828B2 (ja)

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JP2025093353A JP2025120272A (ja) 2019-07-12 2025-06-04 半導体装置

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JP2019129927 2019-07-12
JP2019129927 2019-07-12
PCT/IB2020/056106 WO2021009586A1 (ja) 2019-07-12 2020-06-29 積和演算回路と記憶装置を有する半導体装置、電子部品、および電子機器

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JPWO2021009586A1 JPWO2021009586A1 (cg-RX-API-DMAC7.html) 2021-01-21
JPWO2021009586A5 JPWO2021009586A5 (cg-RX-API-DMAC7.html) 2023-06-16
JP7692828B2 true JP7692828B2 (ja) 2025-06-16

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JP (2) JP7692828B2 (cg-RX-API-DMAC7.html)
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
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US20240038726A1 (en) * 2021-02-10 2024-02-01 Panasonic Intellectual Property Management Co., Ltd. Ai module
US12131794B2 (en) * 2022-08-23 2024-10-29 Micron Technology, Inc. Structures for word line multiplexing in three-dimensional memory arrays

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015165447A (ja) 2010-08-06 2015-09-17 株式会社半導体エネルギー研究所 半導体装置
WO2018189620A1 (ja) 2017-04-14 2018-10-18 株式会社半導体エネルギー研究所 ニューラルネットワーク回路
JP2019036280A (ja) 2017-08-11 2019-03-07 株式会社半導体エネルギー研究所 グラフィックスプロセッシングユニット、コンピュータ、電子機器及び並列計算機
JP2019047006A (ja) 2017-09-05 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、電子機器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04368692A (ja) * 1991-06-17 1992-12-21 Mitsubishi Electric Corp 半導体記憶装置
JPH1188142A (ja) * 1997-09-09 1999-03-30 Mitsubishi Electric Corp 半導体装置およびそれを搭載した回路モジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015165447A (ja) 2010-08-06 2015-09-17 株式会社半導体エネルギー研究所 半導体装置
WO2018189620A1 (ja) 2017-04-14 2018-10-18 株式会社半導体エネルギー研究所 ニューラルネットワーク回路
JP2019036280A (ja) 2017-08-11 2019-03-07 株式会社半導体エネルギー研究所 グラフィックスプロセッシングユニット、コンピュータ、電子機器及び並列計算機
JP2019047006A (ja) 2017-09-05 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、電子機器

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US20220276834A1 (en) 2022-09-01
JP2025120272A (ja) 2025-08-15
WO2021009586A1 (ja) 2021-01-21
JPWO2021009586A1 (cg-RX-API-DMAC7.html) 2021-01-21

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