JP7688702B2 - ハウジングを通って延在する流体充填排気管を有する結晶引上げシステム - Google Patents

ハウジングを通って延在する流体充填排気管を有する結晶引上げシステム Download PDF

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JP7688702B2
JP7688702B2 JP2023527033A JP2023527033A JP7688702B2 JP 7688702 B2 JP7688702 B2 JP 7688702B2 JP 2023527033 A JP2023527033 A JP 2023527033A JP 2023527033 A JP2023527033 A JP 2023527033A JP 7688702 B2 JP7688702 B2 JP 7688702B2
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Japan
Prior art keywords
crystal pulling
exhaust
pulling system
housing
wall
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JP2023527033A
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Japanese (ja)
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JP2023548557A (ja
JP2023548557A5 (https=
Inventor
アリンジェル，ステファン
ザルドーニ，マルコ
ディオーダ，マウロ
スリードハラムルティ，ハリプラサド
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GlobalWafers Co Ltd
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GlobalWafers Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023527033A 2020-11-04 2021-11-04 ハウジングを通って延在する流体充填排気管を有する結晶引上げシステム Active JP7688702B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063109669P 2020-11-04 2020-11-04
US63/109,669 2020-11-04
PCT/US2021/057973 WO2022098811A1 (en) 2020-11-04 2021-11-04 Crystal pulling systems having fluid-filled exhaust tubes that extend through the housing

Publications (3)

Publication Number Publication Date
JP2023548557A JP2023548557A (ja) 2023-11-17
JP2023548557A5 JP2023548557A5 (https=) 2024-11-06
JP7688702B2 true JP7688702B2 (ja) 2025-06-04

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JP2023527033A Active JP7688702B2 (ja) 2020-11-04 2021-11-04 ハウジングを通って延在する流体充填排気管を有する結晶引上げシステム

Country Status (7)

Country Link
US (1) US11976379B2 (https=)
EP (1) EP4240889A1 (https=)
JP (1) JP7688702B2 (https=)
KR (1) KR102874406B1 (https=)
CN (1) CN116547415A (https=)
TW (1) TWI877422B (https=)
WO (1) WO2022098811A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119216271A (zh) 2023-06-30 2024-12-31 Sl镜子科技株式会社 相机用擦拭装置及其控制方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013124192A (ja) 2011-12-13 2013-06-24 Shin Etsu Handotai Co Ltd 単結晶引上げ装置
US20170145587A1 (en) 2015-11-24 2017-05-25 Sunedison Semiconductor Limited (Uen201334164H) Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path
JP2018070392A (ja) 2016-10-26 2018-05-10 信越半導体株式会社 シリコン単結晶引上装置
CN211522363U (zh) 2019-05-27 2020-09-18 宁夏隆基硅材料有限公司 一种单晶炉排气管道及单晶炉
JP2020152588A (ja) 2019-03-18 2020-09-24 信越半導体株式会社 単結晶引上げ装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093456A (en) * 1958-09-02 1963-06-11 Texas Instruments Inc Method for recovery and reuse of quartz containers
TW440613B (en) * 1996-01-11 2001-06-16 Mitsubishi Material Silicon Method for pulling single crystal
KR20030055900A (ko) * 2001-12-27 2003-07-04 주식회사 실트론 단결정 잉곳의 제조장치
CN105506730B (zh) 2015-12-15 2019-02-12 上海汉虹精密机械有限公司 一种单晶炉的主真空管路结构
CN107012501B (zh) * 2017-03-29 2019-05-17 上海汉虹精密机械有限公司 一种单晶硅生长炉水冷套装置
CN208455104U (zh) 2018-06-25 2019-02-01 西安创联新能源设备有限公司 一种充气自清洁式气路管道
JP6973366B2 (ja) * 2018-12-19 2021-11-24 株式会社Sumco 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013124192A (ja) 2011-12-13 2013-06-24 Shin Etsu Handotai Co Ltd 単結晶引上げ装置
US20170145587A1 (en) 2015-11-24 2017-05-25 Sunedison Semiconductor Limited (Uen201334164H) Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path
JP2018070392A (ja) 2016-10-26 2018-05-10 信越半導体株式会社 シリコン単結晶引上装置
JP2020152588A (ja) 2019-03-18 2020-09-24 信越半導体株式会社 単結晶引上げ装置
CN211522363U (zh) 2019-05-27 2020-09-18 宁夏隆基硅材料有限公司 一种单晶炉排气管道及单晶炉

Also Published As

Publication number Publication date
KR102874406B1 (ko) 2025-10-22
WO2022098811A1 (en) 2022-05-12
CN116547415A (zh) 2023-08-04
US11976379B2 (en) 2024-05-07
TWI877422B (zh) 2025-03-21
JP2023548557A (ja) 2023-11-17
TW202225503A (zh) 2022-07-01
EP4240889A1 (en) 2023-09-13
KR20230097152A (ko) 2023-06-30
US20220136129A1 (en) 2022-05-05

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