TWI877422B - 具有穿伸殼體之經流體填充排氣管之拉晶系統 - Google Patents

具有穿伸殼體之經流體填充排氣管之拉晶系統 Download PDF

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Publication number
TWI877422B
TWI877422B TW110141174A TW110141174A TWI877422B TW I877422 B TWI877422 B TW I877422B TW 110141174 A TW110141174 A TW 110141174A TW 110141174 A TW110141174 A TW 110141174A TW I877422 B TWI877422 B TW I877422B
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TW
Taiwan
Prior art keywords
crystal pulling
exhaust
pulling system
wall
fluid
Prior art date
Application number
TW110141174A
Other languages
English (en)
Chinese (zh)
Other versions
TW202225503A (zh
Inventor
斯蒂芬 哈林格
瑪爾科 塞東尼
毛洛 多達
哈利瑞沙 史瑞達拉莫西
Original Assignee
環球晶圓股份有限公司
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Publication date
Application filed by 環球晶圓股份有限公司 filed Critical 環球晶圓股份有限公司
Publication of TW202225503A publication Critical patent/TW202225503A/zh
Application granted granted Critical
Publication of TWI877422B publication Critical patent/TWI877422B/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW110141174A 2020-11-04 2021-11-04 具有穿伸殼體之經流體填充排氣管之拉晶系統 TWI877422B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063109669P 2020-11-04 2020-11-04
US63/109,669 2020-11-04

Publications (2)

Publication Number Publication Date
TW202225503A TW202225503A (zh) 2022-07-01
TWI877422B true TWI877422B (zh) 2025-03-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW110141174A TWI877422B (zh) 2020-11-04 2021-11-04 具有穿伸殼體之經流體填充排氣管之拉晶系統

Country Status (7)

Country Link
US (1) US11976379B2 (https=)
EP (1) EP4240889A1 (https=)
JP (1) JP7688702B2 (https=)
KR (1) KR102874406B1 (https=)
CN (1) CN116547415A (https=)
TW (1) TWI877422B (https=)
WO (1) WO2022098811A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119216271A (zh) 2023-06-30 2024-12-31 Sl镜子科技株式会社 相机用擦拭装置及其控制方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093456A (en) * 1958-09-02 1963-06-11 Texas Instruments Inc Method for recovery and reuse of quartz containers
CN208455104U (zh) * 2018-06-25 2019-02-01 西安创联新能源设备有限公司 一种充气自清洁式气路管道
TW202025339A (zh) * 2018-12-19 2020-07-01 日商Ｓｕｍｃｏ股份有限公司 單結晶矽鑄錠的製造方法及矽單結晶拉引裝置
CN211522363U (zh) * 2019-05-27 2020-09-18 宁夏隆基硅材料有限公司 一种单晶炉排气管道及单晶炉

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW440613B (en) * 1996-01-11 2001-06-16 Mitsubishi Material Silicon Method for pulling single crystal
KR20030055900A (ko) * 2001-12-27 2003-07-04 주식회사 실트론 단결정 잉곳의 제조장치
JP5660019B2 (ja) * 2011-12-13 2015-01-28 信越半導体株式会社 単結晶引上げ装置
US10378121B2 (en) * 2015-11-24 2019-08-13 Globalwafers Co., Ltd. Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path
CN105506730B (zh) 2015-12-15 2019-02-12 上海汉虹精密机械有限公司 一种单晶炉的主真空管路结构
JP6617680B2 (ja) * 2016-10-26 2019-12-11 信越半導体株式会社 シリコン単結晶引上装置
CN107012501B (zh) * 2017-03-29 2019-05-17 上海汉虹精密机械有限公司 一种单晶硅生长炉水冷套装置
JP7047803B2 (ja) * 2019-03-18 2022-04-05 信越半導体株式会社 単結晶引上げ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093456A (en) * 1958-09-02 1963-06-11 Texas Instruments Inc Method for recovery and reuse of quartz containers
CN208455104U (zh) * 2018-06-25 2019-02-01 西安创联新能源设备有限公司 一种充气自清洁式气路管道
TW202025339A (zh) * 2018-12-19 2020-07-01 日商Ｓｕｍｃｏ股份有限公司 單結晶矽鑄錠的製造方法及矽單結晶拉引裝置
CN211522363U (zh) * 2019-05-27 2020-09-18 宁夏隆基硅材料有限公司 一种单晶炉排气管道及单晶炉

Also Published As

Publication number Publication date
KR102874406B1 (ko) 2025-10-22
WO2022098811A1 (en) 2022-05-12
CN116547415A (zh) 2023-08-04
US11976379B2 (en) 2024-05-07
JP7688702B2 (ja) 2025-06-04
JP2023548557A (ja) 2023-11-17
TW202225503A (zh) 2022-07-01
EP4240889A1 (en) 2023-09-13
KR20230097152A (ko) 2023-06-30
US20220136129A1 (en) 2022-05-05

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