CN116547415A - 具有延伸穿过壳体的经流体填充排气管的拉晶系统 - Google Patents

具有延伸穿过壳体的经流体填充排气管的拉晶系统 Download PDF

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Publication number
CN116547415A
CN116547415A CN202180081762.7A CN202180081762A CN116547415A CN 116547415 A CN116547415 A CN 116547415A CN 202180081762 A CN202180081762 A CN 202180081762A CN 116547415 A CN116547415 A CN 116547415A
Authority
CN
China
Prior art keywords
exhaust
crystal pulling
pulling system
housing
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180081762.7A
Other languages
English (en)
Chinese (zh)
Inventor
S·哈林格
M·扎尔多尼
M·迪奥达
H·斯雷德哈拉穆尔西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of CN116547415A publication Critical patent/CN116547415A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202180081762.7A 2020-11-04 2021-11-04 具有延伸穿过壳体的经流体填充排气管的拉晶系统 Pending CN116547415A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063109669P 2020-11-04 2020-11-04
US63/109,669 2020-11-04
PCT/US2021/057973 WO2022098811A1 (en) 2020-11-04 2021-11-04 Crystal pulling systems having fluid-filled exhaust tubes that extend through the housing

Publications (1)

Publication Number Publication Date
CN116547415A true CN116547415A (zh) 2023-08-04

Family

ID=78819643

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180081762.7A Pending CN116547415A (zh) 2020-11-04 2021-11-04 具有延伸穿过壳体的经流体填充排气管的拉晶系统

Country Status (7)

Country Link
US (1) US11976379B2 (https=)
EP (1) EP4240889A1 (https=)
JP (1) JP7688702B2 (https=)
KR (1) KR102874406B1 (https=)
CN (1) CN116547415A (https=)
TW (1) TWI877422B (https=)
WO (1) WO2022098811A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119216271A (zh) 2023-06-30 2024-12-31 Sl镜子科技株式会社 相机用擦拭装置及其控制方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093456A (en) * 1958-09-02 1963-06-11 Texas Instruments Inc Method for recovery and reuse of quartz containers
TW440613B (en) * 1996-01-11 2001-06-16 Mitsubishi Material Silicon Method for pulling single crystal
KR20030055900A (ko) * 2001-12-27 2003-07-04 주식회사 실트론 단결정 잉곳의 제조장치
JP5660019B2 (ja) * 2011-12-13 2015-01-28 信越半導体株式会社 単結晶引上げ装置
US10378121B2 (en) * 2015-11-24 2019-08-13 Globalwafers Co., Ltd. Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path
CN105506730B (zh) 2015-12-15 2019-02-12 上海汉虹精密机械有限公司 一种单晶炉的主真空管路结构
JP6617680B2 (ja) * 2016-10-26 2019-12-11 信越半導体株式会社 シリコン単結晶引上装置
CN107012501B (zh) * 2017-03-29 2019-05-17 上海汉虹精密机械有限公司 一种单晶硅生长炉水冷套装置
CN208455104U (zh) 2018-06-25 2019-02-01 西安创联新能源设备有限公司 一种充气自清洁式气路管道
JP6973366B2 (ja) * 2018-12-19 2021-11-24 株式会社Sumco 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置
JP7047803B2 (ja) * 2019-03-18 2022-04-05 信越半導体株式会社 単結晶引上げ装置
CN211522363U (zh) 2019-05-27 2020-09-18 宁夏隆基硅材料有限公司 一种单晶炉排气管道及单晶炉

Also Published As

Publication number Publication date
KR102874406B1 (ko) 2025-10-22
WO2022098811A1 (en) 2022-05-12
US11976379B2 (en) 2024-05-07
TWI877422B (zh) 2025-03-21
JP7688702B2 (ja) 2025-06-04
JP2023548557A (ja) 2023-11-17
TW202225503A (zh) 2022-07-01
EP4240889A1 (en) 2023-09-13
KR20230097152A (ko) 2023-06-30
US20220136129A1 (en) 2022-05-05

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