KR102874406B1 - 하우징을 통해 연장되는 유체-충전식 배기 튜브들을 갖는 결정 인상 시스템들 - Google Patents

하우징을 통해 연장되는 유체-충전식 배기 튜브들을 갖는 결정 인상 시스템들

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Publication number
KR102874406B1
KR102874406B1 KR1020237018476A KR20237018476A KR102874406B1 KR 102874406 B1 KR102874406 B1 KR 102874406B1 KR 1020237018476 A KR1020237018476 A KR 1020237018476A KR 20237018476 A KR20237018476 A KR 20237018476A KR 102874406 B1 KR102874406 B1 KR 102874406B1
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South Korea
Prior art keywords
housing
exhaust
exhaust tube
crystal
decision
Prior art date
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KR1020237018476A
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English (en)
Korean (ko)
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KR20230097152A (ko
Inventor
스테판 해링거
마르코 자르도니
마우로 디오다
하리프라사드 스리드하라무르티
Original Assignee
글로벌웨이퍼스 씨오., 엘티디.
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Publication of KR20230097152A publication Critical patent/KR20230097152A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020237018476A 2020-11-04 2021-11-04 하우징을 통해 연장되는 유체-충전식 배기 튜브들을 갖는 결정 인상 시스템들 Active KR102874406B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063109669P 2020-11-04 2020-11-04
US63/109,669 2020-11-04
PCT/US2021/057973 WO2022098811A1 (en) 2020-11-04 2021-11-04 Crystal pulling systems having fluid-filled exhaust tubes that extend through the housing

Publications (2)

Publication Number Publication Date
KR20230097152A KR20230097152A (ko) 2023-06-30
KR102874406B1 true KR102874406B1 (ko) 2025-10-22

Family

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KR1020237018476A Active KR102874406B1 (ko) 2020-11-04 2021-11-04 하우징을 통해 연장되는 유체-충전식 배기 튜브들을 갖는 결정 인상 시스템들

Country Status (7)

Country Link
US (1) US11976379B2 (https=)
EP (1) EP4240889A1 (https=)
JP (1) JP7688702B2 (https=)
KR (1) KR102874406B1 (https=)
CN (1) CN116547415A (https=)
TW (1) TWI877422B (https=)
WO (1) WO2022098811A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119216271A (zh) 2023-06-30 2024-12-31 Sl镜子科技株式会社 相机用擦拭装置及其控制方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170145587A1 (en) * 2015-11-24 2017-05-25 Sunedison Semiconductor Limited (Uen201334164H) Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path
CN107012501A (zh) * 2017-03-29 2017-08-04 上海汉虹精密机械有限公司 一种单晶硅生长炉水冷套装置
JP2020152588A (ja) * 2019-03-18 2020-09-24 信越半導体株式会社 単結晶引上げ装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093456A (en) * 1958-09-02 1963-06-11 Texas Instruments Inc Method for recovery and reuse of quartz containers
TW440613B (en) * 1996-01-11 2001-06-16 Mitsubishi Material Silicon Method for pulling single crystal
KR20030055900A (ko) * 2001-12-27 2003-07-04 주식회사 실트론 단결정 잉곳의 제조장치
JP5660019B2 (ja) * 2011-12-13 2015-01-28 信越半導体株式会社 単結晶引上げ装置
CN105506730B (zh) 2015-12-15 2019-02-12 上海汉虹精密机械有限公司 一种单晶炉的主真空管路结构
JP6617680B2 (ja) * 2016-10-26 2019-12-11 信越半導体株式会社 シリコン単結晶引上装置
CN208455104U (zh) 2018-06-25 2019-02-01 西安创联新能源设备有限公司 一种充气自清洁式气路管道
JP6973366B2 (ja) * 2018-12-19 2021-11-24 株式会社Sumco 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置
CN211522363U (zh) 2019-05-27 2020-09-18 宁夏隆基硅材料有限公司 一种单晶炉排气管道及单晶炉

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170145587A1 (en) * 2015-11-24 2017-05-25 Sunedison Semiconductor Limited (Uen201334164H) Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path
CN107012501A (zh) * 2017-03-29 2017-08-04 上海汉虹精密机械有限公司 一种单晶硅生长炉水冷套装置
JP2020152588A (ja) * 2019-03-18 2020-09-24 信越半導体株式会社 単結晶引上げ装置

Also Published As

Publication number Publication date
WO2022098811A1 (en) 2022-05-12
CN116547415A (zh) 2023-08-04
US11976379B2 (en) 2024-05-07
TWI877422B (zh) 2025-03-21
JP7688702B2 (ja) 2025-06-04
JP2023548557A (ja) 2023-11-17
TW202225503A (zh) 2022-07-01
EP4240889A1 (en) 2023-09-13
KR20230097152A (ko) 2023-06-30
US20220136129A1 (en) 2022-05-05

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