JP7677448B2 - バイポーラトランジスタ - Google Patents

バイポーラトランジスタ Download PDF

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Publication number
JP7677448B2
JP7677448B2 JP2023561947A JP2023561947A JP7677448B2 JP 7677448 B2 JP7677448 B2 JP 7677448B2 JP 2023561947 A JP2023561947 A JP 2023561947A JP 2023561947 A JP2023561947 A JP 2023561947A JP 7677448 B2 JP7677448 B2 JP 7677448B2
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JP
Japan
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base layer
emitter
collector
base
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JP2023561947A
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Japanese (ja)
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JPWO2023089653A1 (https=
Inventor
拓也 星
悠太 白鳥
弘樹 杉山
佑樹 吉屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
NTT Inc USA
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Nippon Telegraph and Telephone Corp
NTT Inc USA
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Publication of JPWO2023089653A1 publication Critical patent/JPWO2023089653A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

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  • Bipolar Transistors (AREA)
JP2023561947A 2021-11-16 2021-11-16 バイポーラトランジスタ Active JP7677448B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/042008 WO2023089653A1 (ja) 2021-11-16 2021-11-16 バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
JPWO2023089653A1 JPWO2023089653A1 (https=) 2023-05-25
JP7677448B2 true JP7677448B2 (ja) 2025-05-15

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ID=86396365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023561947A Active JP7677448B2 (ja) 2021-11-16 2021-11-16 バイポーラトランジスタ

Country Status (3)

Country Link
US (1) US20240413227A1 (https=)
JP (1) JP7677448B2 (https=)
WO (1) WO2023089653A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183936A (ja) 2003-11-28 2005-07-07 Sharp Corp バイポーラトランジスタ
WO2020240725A1 (ja) 2019-05-29 2020-12-03 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその作製方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666318B2 (ja) * 1985-08-20 1994-08-24 富士通株式会社 ヘテロ接合バイポ−ラ半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183936A (ja) 2003-11-28 2005-07-07 Sharp Corp バイポーラトランジスタ
WO2020240725A1 (ja) 2019-05-29 2020-12-03 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその作製方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
隈部ほか，エピタキシャルリフトオフ法によって作製された二次元正孔ガスを有するエミッタトップ型GaN-HBT，第８０回応用物理学会秋季学術講演会講演予稿集，日本，応用物理学会，2019年09月04日，21a-E30105

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Publication number Publication date
WO2023089653A1 (ja) 2023-05-25
JPWO2023089653A1 (https=) 2023-05-25
US20240413227A1 (en) 2024-12-12

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