WO2023089653A1 - バイポーラトランジスタ - Google Patents

バイポーラトランジスタ Download PDF

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Publication number
WO2023089653A1
WO2023089653A1 PCT/JP2021/042008 JP2021042008W WO2023089653A1 WO 2023089653 A1 WO2023089653 A1 WO 2023089653A1 JP 2021042008 W JP2021042008 W JP 2021042008W WO 2023089653 A1 WO2023089653 A1 WO 2023089653A1
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Prior art keywords
layer
base layer
emitter
base
collector
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Ceased
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PCT/JP2021/042008
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English (en)
French (fr)
Japanese (ja)
Inventor
拓也 星
悠太 白鳥
弘樹 杉山
佑樹 吉屋
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NTT Inc
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Nippon Telegraph and Telephone Corp
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Priority to JP2023561947A priority Critical patent/JP7677448B2/ja
Priority to US18/699,163 priority patent/US20240413227A1/en
Priority to PCT/JP2021/042008 priority patent/WO2023089653A1/ja
Publication of WO2023089653A1 publication Critical patent/WO2023089653A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

Definitions

  • the present invention relates to bipolar transistors.
  • Nitride semiconductors are promising materials for high-speed, high-voltage electronic devices due to their large bandgap.
  • High electron mobility transistors using high-density sheet carriers generated by polarization of AlGaN/GaN have been actively studied by many research institutes, and have been used as amplification transistors for communication amplifiers and high-efficiency transistors. It has already been put to practical use as a power device.
  • a heterojunction bipolar transistor is a device structure that can achieve both high speed and high withstand voltage by using a high withstand voltage material for the collector layer.
  • group III-V compound semiconductors using InP or GaAs as a substrate material, and group IV materials using SiGe as a base layer it has been reported that a cutoff frequency of several hundreds of GHz, a maximum oscillation frequency, and a high withstand voltage can both be achieved in HBT structures. There are many.
  • nitride semiconductors such as GaN p-type at a high concentration due to the following reasons.
  • the ionization energy of impurities functioning as acceptors is very high.
  • Nitride semiconductors are grown by general growth techniques such as MOCVD, but when p-type doping is carried out, H (hydrogen) contained in the carrier gas and raw materials makes the doped dopant (Mg, Zn, etc.) unsuitable. There is an inherent problem of being activated and not being able to have high hole concentrations.
  • Nitride semiconductors are materials having polarization in the c-axis direction, and devices are generally manufactured by crystal growth (in the +c-axis direction) in a plane orientation called the group III polar plane.
  • the group III polar plane when AlGaN is grown on GaN, the electric field due to the difference in magnitude of spontaneous polarization between the materials and the polarization electric field generated by the strain generated in the AlGaN layer bend the band, resulting in the interface between AlGaN and GaN.
  • a two-dimensional electron gas is generated at Utilizing this, a GaN channel HEMT structure has been realized, and high-frequency devices using this have already been put to practical use.
  • the configuration in which the main surface is the N-polar (group V polar) plane is the inversion of the group III polar plane.
  • the direction of the electric field generated by polarization is reversed from that of the group III polar plane.
  • a two-dimensional hole gas is generated at the AlGaN/GaN interface due to the polarization electric field (see Non-Patent Document 1).
  • the above-described two-dimensional hole gas can be used to overcome the problem of p-type doping control.
  • a two-dimensional hole gas 321 is formed at the interface between the emitter layer 305 made of AlGaN and the p-base layer 304a made of p-type GaN.
  • This HBT comprises a buffer layer 307 formed on a substrate 301, a subcollector layer 302 made of an n-type nitride semiconductor formed on the buffer layer 307, and a subcollector layer 302 formed on the subcollector layer 302. , a collector layer 303 made of n-type GaN, a p-base layer 304a made of p-type GaN formed on the collector layer 303, and a base layer made of undoped GaN formed on the p-base layer 304a. 304b, an emitter layer 305 formed on the base layer 304b, and an emitter cap layer 306 formed on the emitter layer 305 and made of an n-type nitride semiconductor.
  • This HBT also has an emitter electrode 311 formed on the emitter cap layer 306 , a base electrode 312 formed on the base layer beside the emitter layer 305 , and a collector electrode 313 connected to the subcollector layer 302 .
  • an emitter electrode 311 formed on the emitter cap layer 306
  • a base electrode 312 formed on the base layer beside the emitter layer 305
  • a collector electrode 313 connected to the subcollector layer 302 .
  • the concentration of the base layer is increased by the two-dimensional hole gas 321, it is important that the emitter layer 305 also exists directly under the base electrode 312.
  • the emitter layer 305 made of AlGaN is High resistance. Therefore, as shown in FIG. 7A, forming the base electrode 312 directly above the emitter layer 305 increases the ohmic contact resistance. In order to obtain good ohmic contact between the base layer 304b and the base electrode 312, as shown in FIG. Ingenuity is required.
  • the GaN-based HBT structure having the N-polarity as the main surface orientation has the problem that it is difficult to obtain good ohmic contact between the base layer and the base electrode.
  • the emitter layer plays an important role in generating two-dimensional hole gas, its high resistance increases the ohmic resistance during electrode formation.
  • the two-dimensional hole gas directly under the emitter is lost, causing an increase in base resistance and base contact resistance.
  • the present invention has been made to solve the above-described problems, and provides a GaN-based bipolar transistor structure having an N-polarity as a main surface orientation to obtain good ohmic contact between a base layer and a base electrode. With the goal.
  • a bipolar transistor according to the present invention comprises a subcollector layer formed on a substrate and made of an n-type nitride semiconductor, and a subcollector layer formed on the subcollector layer and made of InGaN and made n-type.
  • a base layer made of GaN formed on the collector layer;
  • a mesa-shaped emitter layer made of a nitride semiconductor containing Al and formed on the base layer;
  • An emitter cap layer made of an n-type nitride semiconductor, an emitter electrode formed on the emitter cap layer, and an ohmic connection to the base layer formed on the base layer laterally of the emitter layer.
  • a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer are formed on the substrate with the main surface being a V-group polar surface.
  • a base layer made of GaN is formed on a collector layer made of InGaN with each main surface being a group V polar plane, and a base layer made of GaN is formed on the base layer. Since the emitter layer is formed of a nitride semiconductor containing Al, good ohmic contact between the base layer and the base electrode can be obtained in a GaN-based bipolar transistor structure having N-polarity as the main surface orientation.
  • FIG. 1 is a cross-sectional view showing the configuration of a bipolar transistor according to an embodiment of the invention.
  • FIG. 2A is a band diagram showing band states of a bipolar transistor according to an embodiment of the present invention.
  • FIG. 2B is a band diagram showing band states of a conventional bipolar transistor.
  • FIG. 3 is a band diagram showing band states of a bipolar transistor according to an embodiment of the present invention.
  • FIG. 4 is a characteristic diagram showing the result of calculating the sheet carrier density of the bipolar transistor according to the embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing the configuration of another bipolar transistor according to the embodiment of the invention.
  • FIG. 6 is a band diagram showing band states of another bipolar transistor according to the embodiment of the present invention.
  • FIG. 1 is a cross-sectional view showing the configuration of a bipolar transistor according to an embodiment of the invention.
  • FIG. 2A is a band diagram showing band states of a bipolar transistor according to an embodiment of the present
  • FIG. 7A is a cross-sectional view showing a conventional GaN-based HBT structure with N-polarity as the main surface orientation.
  • FIG. 7B is a cross-sectional view showing a conventional GaN-based HBT structure with N-polarity as the main surface orientation.
  • FIG. 7C is a cross-sectional view showing a conventional GaN-based HBT structure with N-polarity as the main surface orientation.
  • the HBT first comprises a subcollector layer 102 formed on a substrate 101 and a collector layer 103 formed on the subcollector layer 102 .
  • a subcollector layer 102 is formed on the buffer layer 107 .
  • the substrate 101 is used to form a nitride semiconductor device.
  • the material of the substrate 101 is selected so that the main surface orientation is the N-polar plane (the main surface is the V-group polar plane).
  • the substrate 101 can be sapphire, C-plane SiC substrate, N-polar GaN, N-polar AlN substrate, or the like.
  • the buffer layer 107 can be a nitride layer on the substrate surface formed by subjecting the surface of the substrate 101 to high-temperature heat treatment in an atmosphere of a source gas such as ammonia. .
  • a crystal of a nitride semiconductor having an N-polar plane as a main surface orientation can be grown.
  • the substrate 101 is a GaN single crystal substrate or an AlN single crystal substrate having an N-polar plane as a main surface orientation
  • a nitride semiconductor having an N-polar plane as a main surface orientation is used as the substrate 101 without using a special buffer layer. can grow.
  • the subcollector layer 102 can be composed of a highly n-type doped nitride semiconductor (GaN or InGaN).
  • the subcollector layer 102 can be composed of heavily n-type doped GaN. Since the sub-collector layer 102 also functions as a contact layer for achieving ohmic contact with the collector electrode 113, which will be described later, the doping concentration is set to a relatively high concentration (for example, 5 ⁇ 10 18 cm ⁇ 3 or more). .
  • the subcollector layer 102 grows relatively thick within a range that does not affect the device characteristics.
  • the subcollector layer 102 is preferably set to have a thickness of at least 1 ⁇ m or more in order to function as a buffer layer for improving crystal quality.
  • the collector layer 103 is composed of In x Ga 1-x N (0 ⁇ x ⁇ 1) in which the In composition is always set to be greater than zero.
  • the doping concentration for n-type InGaN forming the collector layer 103 is set lower than that of the subcollector layer 102 .
  • the collector layer 103 can be made of n-type InGaN with an n-type impurity concentration of about 10 17 cm ⁇ 3 .
  • the collector layer 103 can be made of InGaN with an In composition of 0.05 or more.
  • the collector layer 103 can have a thickness of about 50 nm.
  • the HBT also includes a base layer 104 formed on the collector layer 103, an emitter layer 105 formed on the base layer 104, and an emitter cap layer 106 formed on the emitter layer 105. .
  • the emitter layer 105 and the emitter cap layer 106 are mesa-shaped.
  • the base layer 104 is composed of GaN.
  • the base layer 104 has a p-base layer 104a made of p-type GaN in the central portion in the thickness direction.
  • An upper base layer 104c above the p base layer 104a and a lower base layer 104b below the p base layer 104a are undoped or p-type with an impurity concentration lower than that of the p base layer 104a.
  • the lower base layer 104b can have a thickness of about 2 nm.
  • the p-base layer 104a can have a thickness of about 5 nm.
  • the upper base layer 104c can have a thickness of about 2 nm.
  • the emitter layer 105 is composed of a nitride semiconductor containing Al.
  • the emitter layer 105 can be composed of AlGaN ( Al0.25Ga0.75N ) .
  • the emitter layer 105 can be about 20 nm thick.
  • the emitter cap layer 106 is composed of an n-type nitride semiconductor.
  • the emitter cap layer 106 is a layer for forming an ohmic contact with low contact resistance, and has a high n-type impurity concentration.
  • the emitter cap layer 106 can have an n-type impurity concentration of 5 ⁇ 10 18 cm ⁇ 3 or more. In this layer, it is effective to increase the impurity concentration and narrow the bandgap for ohmic contact with the metal. Therefore, the emitter cap layer 106 is not limited to GaN, but can be made of InGaN or the like. Also, the emitter cap layer 106 can have a thickness of about 100 nm.
  • the subcollector layer 102, the collector layer 103, the base layer 104, the emitter layer 105, and the emitter cap layer 106 are formed on the substrate 101 with their main surfaces being V group polar surfaces.
  • This HBT also has an emitter electrode 111 formed on the emitter cap layer 106, a base electrode 112 formed on the base layer 104 on the side of the emitter layer 105 and ohmically connected to the base layer 104, and a collector electrode 113 connected to the subcollector layer 102 .
  • the base electrode 112 can be formed on and in contact with the base layer 104 around the emitter layer 105 formed in a mesa shape.
  • a 2D hole gas 121 is provided.
  • the polarization effect is greater than that of the general group-III polarity configuration.
  • the bending of the band is different.
  • the bands are raised because the respective layers have different polarization levels.
  • the energy of the valence band at the interface exceeds the Fermi energy (Fermi level), resulting in a high-concentration two-dimensional A hole gas 121 is formed.
  • InGaN has a larger spontaneous polarization than GaN.
  • the collector layer 103 made of InGaN is present between the p-base layer 104a and the subcollector layer 102, the spontaneous polarization works in the direction of enhancing the internal electric field of the collector layer 103.
  • FIG. Furthermore, between the p-base layer 104a and the collector layer 103, there is a lower base layer 104b made of undoped GaN. Therefore, the band rises also at the interface between the lower base layer 104b and the collector layer 103.
  • FIG. As a result, a high-concentration two-dimensional hole gas 121 is also formed at this interface.
  • the p-base layer 304a, the collector layer 303, and the sub-collector layer 302 are all made of the same material (GaN in this case), no electric field is generated due to the polarization difference between the materials, and the pin Only junctions are formed.
  • the interface is formed by the lower base layer 104b made of GaN and the collector layer 103 made of InGaN. Gas is generated, and as a result, the hole concentration of the two-dimensional hole gas 121 formed in the collector layer 103 near the base layer can be set higher.
  • the effects of the present invention when manufacturing devices will be specifically described.
  • a technique is used to increase the density of the base layer by forming a two-dimensional hole gas at the interface between the emitter layer and the base layer.
  • it is necessary to form ohmic contacts between the metal electrode, the emitter contact layer, the base layer, and the subcollector layer from the upper surface side (surface side) of the device.
  • the two-dimensional hole gas 121 also exists at the interface between the collector layer 103 and the base layer 104 (lower base layer 104b). exist. Therefore, even if the emitter layer 105 is completely removed from the region where the base electrode 112 is to be formed, and the base electrode 112 is formed on and in contact with the base layer 104 (upper base layer 104c), the positive effect of the base layer 104 in this region is eliminated. A decrease in pore density can be suppressed. As a result, good ohmic contact between the base layer 104 and the base electrode 112 can be realized.
  • the subcollector layer 102 was made of n-type GaN with an impurity concentration of about 10 19 cm ⁇ 3
  • the collector layer 103 was made of InGaN and had a thickness of 50 nm. 3 and 4, the numerals (0, 0.05, 0.07, 0.10) shown in the figures indicate the In composition of InGaN forming the collector layer 103. As shown in FIG.
  • the lower base layer 104b is made of undoped GaN and has a thickness of 2 nm.
  • the p-base layer 104a is made of p-type GaN with an impurity concentration of about 10 19 cm ⁇ 3 and has a thickness of 5 nm.
  • 104c is composed of undoped GaN and has a thickness of 2 nm.
  • the emitter layer 105 is made of Al 0.25 Ga 0.75 N and has a thickness of 20 nm
  • the emitter cap layer 106 is made of n-type GaN with an impurity concentration of about 10 19 cm ⁇ 3 and has a thickness of 100 nm. .
  • the interface between the lower base layer 104b (base layer 104) and the collector layer made of GaN is not affected by polarization due to the heterostructure, and the interface band is raised. never. Therefore, as indicated by the dotted line in FIG. 4, no two-dimensional hole gas is generated and the carrier density (hole density) at the interface is low.
  • the In composition of the collector layer 103 is higher than 0.05, the band at the interface between the lower base layer 104b (base layer 104) and the collector layer 103 rises due to the influence of the polarization electric field caused by the heterostructure, and as shown in FIG. As shown, the energy of the valence band edge is comparable to or higher than the Fermi level. As a result, as shown in FIG. 4, a high hole density is obtained when the In composition of the collector layer 103 is 0.05 or more.
  • the layer structure thickness, composition, doping concentration, etc.
  • the collector layer 103 made of InGaN, the lower base layer 104b, and the p-base layer 104a are laminated in this order.
  • the direction of the polarity of the layer structure is important, and in the case of N polarity, it is important that the layers are laminated in this order from the substrate side, and in the case of Group III polarity, the layers are laminated in the opposite order.
  • the p-base layer 104a is provided at the central portion in the thickness direction of the base layer 104, but this is not a necessary configuration.
  • the entire base layer 104 can be composed of undoped GaN.
  • the base layer 104 can be made of undoped GaN and can have a thickness of about 4 nm.
  • Other configurations are the same as those of the above-described embodiment, and description thereof is omitted.
  • the subcollector layer 102 is made of n-type GaN with an impurity concentration of about 10 19 cm ⁇ 3
  • the collector layer 103 is made of In 0.1 Ga 0.9 N and has a thickness of 50 nm
  • the base layer 104 is undoped. It was made of GaN and had a thickness of 4 nm.
  • the emitter layer 105 is made of Al 0.25 Ga 0.75 N and has a thickness of 20 nm
  • the emitter cap layer 106 is made of n-type GaN with an impurity concentration of about 10 19 cm ⁇ 3 and has a thickness of 100 nm. .
  • a p-base layer is not introduced in this structure. Therefore, it is a structure in which an emitter layer 105 made of undoped AlGaN, a base layer 104 made of undoped GaN, and a collector layer 103 made of undoped InGaN are simply laminated. Even with such a structure that does not use a p-type doping layer, a two-dimensional hole gas is generated in the collector layer 103 near the interface due to the polarization electric field caused by the heterostructure of the collector layer 103 and the base layer 104. A high hole concentration can be obtained. Also in the heterostructure of the emitter layer 105 and the base layer 104, two-dimensional hole gas is generated in the base layer 104 near the interface due to the influence of the polarization electric field caused by this.
  • a base layer made of GaN is formed on a collector layer made of InGaN while each main surface is a group V polar plane, and a base layer made of GaN is formed on the base layer. Then, an emitter layer made of a nitride semiconductor containing Al was formed. As a result, two-dimensional hole gas is formed in each of the base layer in the vicinity of the interface between the base layer and the collector layer and the collector layer in the vicinity of the interface between the collector layer and the base layer. With the GaN-based bipolar transistor structure of , good ohmic contact between the base layer and the base electrode can be obtained.

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PCT/JP2021/042008 2021-11-16 2021-11-16 バイポーラトランジスタ Ceased WO2023089653A1 (ja)

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JP2023561947A JP7677448B2 (ja) 2021-11-16 2021-11-16 バイポーラトランジスタ
US18/699,163 US20240413227A1 (en) 2021-11-16 2021-11-16 Bipolar transistor
PCT/JP2021/042008 WO2023089653A1 (ja) 2021-11-16 2021-11-16 バイポーラトランジスタ

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242451A (ja) * 1985-08-20 1987-02-24 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置
JP2005183936A (ja) * 2003-11-28 2005-07-07 Sharp Corp バイポーラトランジスタ
WO2020240725A1 (ja) * 2019-05-29 2020-12-03 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242451A (ja) * 1985-08-20 1987-02-24 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置
JP2005183936A (ja) * 2003-11-28 2005-07-07 Sharp Corp バイポーラトランジスタ
WO2020240725A1 (ja) * 2019-05-29 2020-12-03 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその作製方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KUMABE, TAKERU ET AL.: "Emitter-top GaN-HBT with two-dimensional hole gas fabricated by epitaxial lift-off method", PROCEEDINGS OF THE 80TH JSAP AUTUMN MEETING, 4 September 2019 (2019-09-04), XP009545658 *

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