JPWO2023089653A1 - - Google Patents
Info
- Publication number
- JPWO2023089653A1 JPWO2023089653A1 JP2023561947A JP2023561947A JPWO2023089653A1 JP WO2023089653 A1 JPWO2023089653 A1 JP WO2023089653A1 JP 2023561947 A JP2023561947 A JP 2023561947A JP 2023561947 A JP2023561947 A JP 2023561947A JP WO2023089653 A1 JPWO2023089653 A1 JP WO2023089653A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/136—Emitter regions of BJTs of heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/042008 WO2023089653A1 (ja) | 2021-11-16 | 2021-11-16 | バイポーラトランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023089653A1 true JPWO2023089653A1 (https=) | 2023-05-25 |
| JP7677448B2 JP7677448B2 (ja) | 2025-05-15 |
Family
ID=86396365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023561947A Active JP7677448B2 (ja) | 2021-11-16 | 2021-11-16 | バイポーラトランジスタ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240413227A1 (https=) |
| JP (1) | JP7677448B2 (https=) |
| WO (1) | WO2023089653A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6242451A (ja) * | 1985-08-20 | 1987-02-24 | Fujitsu Ltd | ヘテロ接合バイポ−ラ半導体装置 |
| JP2005183936A (ja) * | 2003-11-28 | 2005-07-07 | Sharp Corp | バイポーラトランジスタ |
| WO2020240725A1 (ja) * | 2019-05-29 | 2020-12-03 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタおよびその作製方法 |
-
2021
- 2021-11-16 JP JP2023561947A patent/JP7677448B2/ja active Active
- 2021-11-16 WO PCT/JP2021/042008 patent/WO2023089653A1/ja not_active Ceased
- 2021-11-16 US US18/699,163 patent/US20240413227A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6242451A (ja) * | 1985-08-20 | 1987-02-24 | Fujitsu Ltd | ヘテロ接合バイポ−ラ半導体装置 |
| JP2005183936A (ja) * | 2003-11-28 | 2005-07-07 | Sharp Corp | バイポーラトランジスタ |
| WO2020240725A1 (ja) * | 2019-05-29 | 2020-12-03 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタおよびその作製方法 |
Non-Patent Citations (1)
| Title |
|---|
| 隈部ほか: "エピタキシャルリフトオフ法によって作製された二次元正孔ガスを有するエミッタトップ型GaN-HBT", 第８０回応用物理学会秋季学術講演会講演予稿集, JPN7025001365, 4 September 2019 (2019-09-04), JP, pages 21 - 30105, ISSN: 0005564042 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023089653A1 (ja) | 2023-05-25 |
| JP7677448B2 (ja) | 2025-05-15 |
| US20240413227A1 (en) | 2024-12-12 |
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