JP7675281B2 - ウエハ載置台 - Google Patents

ウエハ載置台 Download PDF

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Publication number
JP7675281B2
JP7675281B2 JP2024508967A JP2024508967A JP7675281B2 JP 7675281 B2 JP7675281 B2 JP 7675281B2 JP 2024508967 A JP2024508967 A JP 2024508967A JP 2024508967 A JP2024508967 A JP 2024508967A JP 7675281 B2 JP7675281 B2 JP 7675281B2
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JP
Japan
Prior art keywords
flow path
mounting surface
wafer mounting
wafer
refrigerant flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024508967A
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English (en)
Japanese (ja)
Other versions
JPWO2024241516A5 (https=
JPWO2024241516A1 (https=
Inventor
太朗 宇佐美
陽平 梶浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2024241516A1 publication Critical patent/JPWO2024241516A1/ja
Publication of JPWO2024241516A5 publication Critical patent/JPWO2024241516A5/ja
Application granted granted Critical
Publication of JP7675281B2 publication Critical patent/JP7675281B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2024508967A 2023-05-24 2023-05-24 ウエハ載置台 Active JP7675281B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/019273 WO2024241516A1 (ja) 2023-05-24 2023-05-24 ウエハ載置台

Publications (3)

Publication Number Publication Date
JPWO2024241516A1 JPWO2024241516A1 (https=) 2024-11-28
JPWO2024241516A5 JPWO2024241516A5 (https=) 2025-04-30
JP7675281B2 true JP7675281B2 (ja) 2025-05-12

Family

ID=93565239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024508967A Active JP7675281B2 (ja) 2023-05-24 2023-05-24 ウエハ載置台

Country Status (6)

Country Link
US (1) US20240395511A1 (https=)
JP (1) JP7675281B2 (https=)
KR (1) KR20240170521A (https=)
CN (1) CN121175793A (https=)
TW (1) TW202447830A (https=)
WO (1) WO2024241516A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025176267A (ja) * 2024-05-21 2025-12-04 Toto株式会社 静電チャック

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272535A (ja) 2008-05-09 2009-11-19 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2022525028A (ja) 2019-03-08 2022-05-11 ラム リサーチ コーポレーション プラズマ処理チャンバ用のチャック

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
JP6175437B2 (ja) * 2012-07-27 2017-08-02 京セラ株式会社 流路部材およびこれを用いた熱交換器ならびに半導体製造装置
JP5936165B2 (ja) * 2014-11-07 2016-06-15 Toto株式会社 静電チャックおよびウェーハ処理装置
WO2016197083A1 (en) * 2015-06-05 2016-12-08 Watlow Electric Manufacturing Company High thermal conductivity wafer support pedestal device
KR20170055822A (ko) * 2015-11-12 2017-05-22 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
JP6839314B2 (ja) * 2019-03-19 2021-03-03 日本碍子株式会社 ウエハ載置装置及びその製法
JP7365815B2 (ja) 2019-08-09 2023-10-20 東京エレクトロン株式会社 載置台及び基板処理装置
JP7688551B2 (ja) * 2021-09-20 2025-06-04 日本特殊陶業株式会社 保持部材及びその製造方法
JP7496343B2 (ja) * 2021-11-08 2024-06-06 日本碍子株式会社 ウエハ載置台
JP7620593B2 (ja) * 2022-04-26 2025-01-23 日本碍子株式会社 ウエハ載置台
US20240408712A1 (en) * 2023-06-06 2024-12-12 Applied Materials, Inc. Ceramic cooling base

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272535A (ja) 2008-05-09 2009-11-19 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2022525028A (ja) 2019-03-08 2022-05-11 ラム リサーチ コーポレーション プラズマ処理チャンバ用のチャック

Also Published As

Publication number Publication date
TW202447830A (zh) 2024-12-01
JPWO2024241516A1 (https=) 2024-11-28
CN121175793A (zh) 2025-12-19
KR20240170521A (ko) 2024-12-03
US20240395511A1 (en) 2024-11-28
WO2024241516A1 (ja) 2024-11-28

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