WO2024241516A1 - ウエハ載置台 - Google Patents

ウエハ載置台 Download PDF

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Publication number
WO2024241516A1
WO2024241516A1 PCT/JP2023/019273 JP2023019273W WO2024241516A1 WO 2024241516 A1 WO2024241516 A1 WO 2024241516A1 JP 2023019273 W JP2023019273 W JP 2023019273W WO 2024241516 A1 WO2024241516 A1 WO 2024241516A1
Authority
WO
WIPO (PCT)
Prior art keywords
flow path
mounting surface
wafer mounting
wafer
refrigerant flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/019273
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English (en)
French (fr)
Japanese (ja)
Inventor
太朗 宇佐美
陽平 梶浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to PCT/JP2023/019273 priority Critical patent/WO2024241516A1/ja
Priority to CN202380012895.8A priority patent/CN121175793A/zh
Priority to KR1020247005381A priority patent/KR20240170521A/ko
Priority to JP2024508967A priority patent/JP7675281B2/ja
Priority to US18/441,111 priority patent/US20240395511A1/en
Priority to TW113114104A priority patent/TW202447830A/zh
Publication of WO2024241516A1 publication Critical patent/WO2024241516A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates

Definitions

  • the present invention relates to a wafer mounting table.
  • a wafer mounting table that includes a ceramic plate having a wafer mounting surface on the upper surface, a cooling plate provided on the lower surface of the ceramic plate, and a refrigerant flow path built into the cooling plate.
  • Patent Document 1 discloses a wafer mounting table in which the cooling plate is formed of a material with high thermal conductivity such as Al, in which the distance between the upper surface of the refrigerant flow path and the wafer mounting surface is constant from the inlet to the outlet of the refrigerant flow path, and the cross-sectional shape of the refrigerant flow path varies depending on the position of the refrigerant flow path.
  • Patent Document 1 describes that the cross-sectional area of the flow path corresponding to the relatively high temperature part of the wafer mounting surface is smaller than the cross-sectional area of the flow path corresponding to the relatively low temperature part of the wafer mounting surface. It also describes that the width of the upper surface of the refrigerant flow path from the inlet to the outlet of the refrigerant flow path is constant, and the height direction length of the refrigerant flow path is shorter at the position corresponding to the relatively high temperature part of the wafer mounting surface than at the position corresponding to the relatively low temperature part of the wafer mounting surface.
  • Patent Document 1 can suppress uneven heat transfer in the refrigerant flow path when the cooling plate is made of a material with good thermal conductivity such as Al, but cannot sufficiently suppress uneven heat transfer when the cooling plate is made of a material with a lower thermal conductivity than Al.
  • the present invention was made to solve these problems, and its main purpose is to suppress temperature unevenness on the wafer mounting surface of a wafer mounting table whose cooling plate is made of a material with a lower thermal conductivity than Al.
  • the wafer mounting table of the present invention comprises: a ceramic plate having a wafer mounting surface on an upper surface thereof; a cooling plate provided on a lower surface of the ceramic plate; A refrigerant flow path built into the cooling plate; A wafer mounting table comprising:
  • the cooling plate is made of a material having a thermal conductivity lower than that of Al,
  • the length between the upper surface of the coolant flow path and the wafer placement surface is not constant, but has long and short portions.
  • the cross-sectional area of the refrigerant flow path is not constant but has small and large areas.
  • the aspect ratio which is the ratio of the vertical length to the horizontal length in the flow passage cross section of the refrigerant flow passage, is not constant and has small parts and large parts. It is something.
  • the length between the top surface of the refrigerant flow path and the wafer placement surface is not constant, and there are long and short parts.
  • the short parts have a higher cooling efficiency than the long parts.
  • the cross-sectional area of the refrigerant flow path is also not constant, and there are small and large parts.
  • the flow speed is faster in the small cross-sectional area of the refrigerant flow path than in the large cross-sectional area, and the cooling efficiency is higher.
  • the aspect ratio of the refrigerant flow path (the ratio of the vertical length to the horizontal length in the cross-section of the refrigerant flow path) is not constant, and there are small and large parts.
  • the cooling plate is made of a material with a lower thermal conductivity than Al
  • the smaller the aspect ratio the higher the cooling efficiency will be, assuming that the cross-sectional area of the refrigerant flow path is the same. From the above, in a wafer placement table in which the cooling plate is made of a material with a lower thermal conductivity than Al, the length between the top surface of the refrigerant flow path and the wafer placement surface, the cross-sectional area of the refrigerant flow path, and the aspect ratio of the cross-sectional area of the flow path can be adjusted to suppress temperature unevenness on the wafer placement surface.
  • the thermal conductivity of the cooling plate may be 50 W/mK or less.
  • the cross-sectional area of the refrigerant flow path is the same, the smaller the aspect ratio, the more significantly the cooling efficiency will be increased.
  • the length between the upper surface of the coolant flow path and the wafer mounting surface, the flow path cross-sectional area of the coolant flow path, and the aspect ratio of the flow path cross-section of the coolant flow path may be set so that the heat exchange efficiency of the outer periphery of the wafer mounting surface is higher than the heat exchange efficiency of the central region of the wafer mounting surface.
  • the heat input of the plasma in the wafer mounting table is greater in the outer periphery of the wafer mounting surface than in the central region.
  • the length between the upper surface of the refrigerant flow path and the wafer mounting surface may be shorter in the peripheral region of the wafer mounting surface than in the central region of the wafer mounting surface, the cross-sectional area of the refrigerant flow path may be smaller, and the aspect ratio of the cross-section of the refrigerant flow path may be smaller.
  • the ceramic plate may have an annular focus ring mounting surface around the wafer mounting surface that is one step lower than the height of the wafer mounting surface, and an annular focus ring having an outer diameter larger than the outer diameter of the ceramic plate and the outer diameter of the cooling plate may be mounted on the focus ring mounting surface.
  • the focus ring protrudes outside the wafer mounting table (overhangs), the peripheral region of the wafer mounting surface is likely to become hotter. Therefore, there is great significance in applying the present invention.
  • the aspect ratio of the portion of the coolant flow path where the aspect ratio is low may be 0.5 or less. This increases the cooling efficiency of the portion of the coolant flow path where the aspect ratio is low.
  • the aspect ratio of the high aspect ratio portion of the refrigerant flow path may be 1 or more. In this way, the difference in refrigerant efficiency between the low aspect ratio portion and the high aspect ratio portion of the refrigerant flow path can be increased.
  • the ceramic plate may be made of alumina, and the cooling plate may be made of Ti or a Ti alloy. In this way, the difference in thermal expansion between the ceramic plate and the cooling plate is small, so that warping of the wafer mounting table can be suppressed.
  • the wafer mounting surface has an area with high cooling demand and an area with low cooling demand
  • the length between the upper surface of the refrigerant flow path and the wafer mounting surface, the flow path cross-sectional area of the refrigerant flow path, and the aspect ratio of the flow path cross-section of the refrigerant flow path may be set so that the heat exchange efficiency of the area of the wafer mounting surface with high cooling demand is higher than that of the area with low cooling demand.
  • the area with high cooling demand is the peripheral area of the wafer mounting surface
  • the area with low cooling demand is the central area of the wafer mounting surface.
  • FIG. FIG. 2 is a cross-sectional view taken along line AA in FIG. 1 .
  • FIG. 2 is a partially enlarged view of FIG. 6 is a graph showing the relationship between the aspect ratio of a flow channel cross section and temperature characteristics.
  • FIG. 3 is a cross-sectional view of a coolant flow path 32 with fins 32a.
  • FIG. 1 is a cross-sectional view of the wafer mounting table 10 (a cross-sectional view of the wafer mounting table 10 cut along a plane including the central axis of the wafer mounting table 10),
  • FIG. 2 is a plan view of the wafer mounting table 10
  • FIG. 3 is a cross-sectional view of A-A in FIG. 1
  • FIG. 4 is an enlarged view of a portion of FIG. 1.
  • the wafer mounting table 10 is used to perform CVD, etching, etc. on the wafer W using plasma.
  • the wafer mounting table 10 includes a ceramic plate 20, a cooling plate 30, and a bonding layer 40.
  • the ceramic plate 20 is made of a ceramic material such as alumina or aluminum nitride.
  • the ceramic plate 20 has a wafer mounting surface 22, an electrostatic electrode 23, and a focus ring mounting surface 24.
  • the focus ring may be abbreviated as "FR.”
  • the wafer mounting surface 22 is a circular surface and is provided on the upper surface of the ceramic plate 20.
  • the wafer W is mounted on the wafer mounting surface 22.
  • the wafer mounting surface 22 has an annular seal band formed along the outer edge, and a plurality of circular small protrusions are formed on the entire surface of the area surrounded by the seal band.
  • the seal band and the circular small protrusions are the same height, for example, several ⁇ m to several tens of ⁇ m.
  • the wafer mounting surface 22 has an area that is likely to become hot (area with high cooling requirements) and an area that is not likely to become hot (area with low cooling requirements).
  • the heat input of the plasma is greater on the outer periphery side, so as shown in FIG. 2, the outer peripheral area 22a (lightly shaded area) of the wafer mounting surface 22 is an area with high cooling requirements, and the central area 22b (darkly shaded area) of the wafer mounting surface 22 is an area with low cooling requirements.
  • the electrostatic electrode 23 is a flat mesh electrode or plate electrode to which a DC voltage can be applied.
  • a DC voltage is applied to the electrostatic electrode 23
  • the wafer W is attracted and fixed to the wafer mounting surface 22 (specifically, the upper surface of the seal band and the upper surfaces of the small circular protrusions) by electrostatic attraction, and when the application of the DC voltage is released, the wafer W is released from the wafer mounting surface 22.
  • the FR mounting surface 24 is provided in an annular shape around the wafer mounting surface 22.
  • the height of the FR mounting surface 24 is one step lower than the height of the wafer mounting surface 22.
  • An annular focus ring 60 is mounted on the FR mounting surface 24.
  • the focus ring 60 is made of, for example, Si.
  • a circumferential groove 62 is provided on the upper part of the inner surface of the focus ring 60 so that it does not come into contact with the wafer W.
  • the outer diameter of the focus ring 60 is larger than the outer diameter of the ceramic plate 20 and the outer diameter of the cooling plate 30. Therefore, the focus ring 60 is placed on the FR mounting surface 24 in a state where it protrudes outside the wafer mounting table 10 (overhanging state).
  • the cooling plate 30 is made of a material with a lower thermal conductivity than Al. Examples of such materials include Ti-containing materials.
  • the cooling plate 30 has a refrigerant flow path 32 through which a refrigerant can circulate. As shown in FIG. 3, the refrigerant flow path 32 is provided so as to cover the entire surface of the ceramic plate 20 from one end (inlet 32in) to the other end (outlet 32out) in a single stroke in a plan view. In this embodiment, the refrigerant flow path 32 is formed in a spiral shape in a plan view.
  • Such a cooling plate 30 can be manufactured, for example, by diffusion bonding a plurality of layered members.
  • the refrigerant is supplied to the inlet 32in of the refrigerant flow path 32 from a refrigerant circulation device (not shown), passes through the refrigerant flow path 32, and is discharged from the outlet 32out of the refrigerant flow path 32 and returns to the refrigerant circulation device.
  • the refrigerant circulation device can adjust the refrigerant to a desired temperature.
  • the refrigerant is preferably a liquid, and is preferably electrically insulating. Examples of electrically insulating liquids include fluorine-based inert liquids.
  • the conductive material used for the cooling plate 30 is preferably one with a thermal expansion coefficient close to that of the ceramic plate 20. If the material for the ceramic plate 20 is alumina, the material for the cooling plate 30 is preferably pure Ti or an ⁇ - ⁇ Ti alloy. This is because the thermal expansion coefficients of pure Ti and ⁇ - ⁇ Ti are close to that of alumina.
  • the bonding layer 40 bonds the lower surface of the ceramic plate 20 to the upper surface of the cooling plate 30.
  • the bonding layer 40 may be, for example, a metal layer formed from solder or a metal brazing material, or a resin layer formed from a resin adhesive.
  • the refrigerant flow path 32 has a portion 32x that corresponds to the outer circumferential region 22a (region with high cooling demand) of the wafer mounting surface 22, and a portion 32y that corresponds to the central region 22b (region with low cooling demand).
  • the portion 32x of the refrigerant flow path 32 that corresponds to the outer circumferential region 22a is the portion from the inlet 32in of the refrigerant flow path 32 to the midpoint 32mid.
  • the portion 32y of the refrigerant flow path 32 that corresponds to the central region 22b is the portion from the midpoint 32mid of the refrigerant flow path 32 to the outlet 32out.
  • the length D between the upper surface of the refrigerant flow path 32 and the wafer mounting surface 22 is such that the length Dx of the portion 32x of the refrigerant flow path 32 that corresponds to the peripheral region 22a of the wafer mounting surface 22 is shorter than the length Dy of the portion 32y that corresponds to the central region 22b.
  • the shorter the length D the more efficiently the heat exchange between the wafer mounting surface 22 and the refrigerant flowing through the refrigerant flow path 32 is performed.
  • the flow path cross-sectional area Sx of the portion 32x corresponding to the outer peripheral region 22a is smaller than the flow path cross-sectional area Sy of the portion 32y corresponding to the central region 22b.
  • the smaller the flow path cross-sectional area S the faster the flow rate of the refrigerant flowing through the refrigerant flow path 32, and the higher the cooling efficiency.
  • the flow path cross-sectional area S is the area of the cross section (flow path cross section) when the refrigerant flow path 32 is cut on a plane perpendicular to the longitudinal direction of the refrigerant flow path 32.
  • the aspect ratio H/W (the ratio of the vertical length H to the horizontal length W) of the cross section of the refrigerant flow path 32
  • the aspect ratio Hx/Wx of the portion 32x corresponding to the outer periphery region 22a is smaller than the aspect ratio Hy/Wy of the portion 32y corresponding to the central region 22b.
  • the cooling plate 30 is made of a material with a lower thermal conductivity than Al, the cooling efficiency will be higher as the aspect ratio H/W is smaller, assuming that the cross-sectional area of the refrigerant flow path 32 is the same (this point will be described later using FIG. 5).
  • the cooling efficiency of the portion 32x of the refrigerant flow path 32 corresponding to the outer periphery region 22a is higher than that of the portion 32y corresponding to the central region 22b.
  • the wafer mounting table 10 is fixed inside a semiconductor process chamber (not shown).
  • a focus ring 60 is placed on the FR mounting surface 24, and a wafer W is placed on the wafer mounting surface 22.
  • a DC voltage is applied to the electrostatic electrode 23 to adsorb the wafer W to the wafer mounting surface 22.
  • a thermally conductive gas (such as He gas) is supplied to a gas passage (a passage from the lower surface of the cooling plate 30 to the wafer mounting surface 22) (not shown) provided inside the wafer mounting table 10.
  • the gas fills the space surrounded by the lower surface of the wafer W and the seal band of the wafer mounting surface 22, improving the thermal conduction between the wafer W and the wafer mounting surface 22.
  • the interior of the chamber is then set to a predetermined vacuum atmosphere (or reduced pressure atmosphere), and an RF voltage is applied to the cooling plate 30 while supplying a process gas from a shower head provided on the ceiling of the chamber. Then, a plasma is generated between the wafer W and the shower head. The plasma is then used to perform CVD film deposition and etching on the wafer W.
  • the heat input from the plasma is greater in the outer peripheral region of the wafer W than in the central region, so the outer peripheral region of the wafer W is more likely to become hotter than the central region. Therefore, to make the temperature of the wafer W uniform, it is necessary to cool the outer peripheral region 22a of the wafer mounting surface 22 more efficiently than the central region 22b.
  • the length D between the upper surface of the refrigerant flow path 32 and the wafer mounting surface 22, the flow path cross-sectional area S of the refrigerant flow path 32, and the aspect ratio H/W at the flow path cross section of the refrigerant flow path 32 are adjusted as described above. As a result, the cooling efficiency is higher in the portion 32x of the refrigerant flow path 32 corresponding to the outer peripheral region 22a than in the portion 32y corresponding to the central region 22b.
  • the length D between the upper surface of the refrigerant flow path 32 and the wafer mounting surface 22 is not constant and has long and short points. Points with short length D have higher cooling efficiency than points with long length D.
  • the flow path cross-sectional area S of the refrigerant flow path 32 is not constant and has small and large points. Points with small flow path cross-sectional area S of the refrigerant flow path 32 have a faster flow rate and higher cooling efficiency than points with large flow path cross-sectional area S.
  • the aspect ratio H/W which is the ratio of the vertical length to the horizontal length in the flow path cross section of the refrigerant flow path 32, is not constant and has small and large points.
  • the cooling plate 30 is formed of a material with a lower thermal conductivity than Al, the smaller the aspect ratio, the higher the cooling efficiency will be, assuming the same cross-sectional area of the refrigerant flow path 32. From the above, in a wafer mounting table 10 in which the cooling plate 30 is made of a material with a lower thermal conductivity than Al, by adjusting the length D between the upper surface of the refrigerant flow path 32 and the wafer mounting surface 22, the flow path cross-sectional area S of the refrigerant flow path 32, and the aspect ratio H/W of the flow path cross-section, it is possible to suppress temperature unevenness on the wafer mounting surface 22.
  • the thermal conductivity of the cooling plate 30 is 50 W/mK or less.
  • the thermal conductivity of the cooling plate 30 is 5 to 20 W/mK, the effect of the aspect ratio will be more significant.
  • the thermal conductivity of pure Ti is 17 W/mK
  • the thermal conductivity of an ⁇ - ⁇ Ti alloy is 7.5 W/mK.
  • the plasma heat input to the wafer mounting table 10 is generally greater in the outer peripheral region 22a of the wafer mounting surface 22 than in the central region 22b.
  • the length D, the flow path cross-sectional area S, and the aspect ratio H/W are set so that the heat exchange efficiency of the outer peripheral region 22a of the wafer mounting surface 22 is higher than that of the central region 22b.
  • the outer peripheral region 22a of the wafer mounting surface 22 has a shorter length D, a smaller flow path cross-sectional area S, and a smaller aspect ratio H/W than the central region 22b. This makes it possible to make the cooling efficiency of the outer peripheral region 22a of the wafer mounting surface 22 higher than that of the central region 22b, and thus effectively suppress temperature unevenness in the wafer mounting surface 22.
  • the ceramic plate 20 has an annular focus ring mounting surface 24 around the wafer mounting surface 22, which is one step lower than the height of the wafer mounting surface 22, and an annular focus ring 60 having an outer diameter larger than the outer diameter of the ceramic plate 20 and the outer diameter of the cooling plate 30 is mounted on the focus ring mounting surface 24.
  • the focus ring 60 protrudes outside the wafer mounting table 10 (overhangs), the peripheral region 22a of the wafer mounting surface 22 is likely to become hotter. Therefore, there is great significance in applying the present invention.
  • the aspect ratio H/W at the portion of the refrigerant flow path 32 where the aspect ratio H/W is low is 0.5 or less. This increases the cooling efficiency at the portion of the refrigerant flow path 32 where the aspect ratio H/W is low. At this time, the cooling efficiency at the portion of the refrigerant flow path 32 where the aspect ratio H/W is low is increased. At this time, the aspect ratio H/W at the portion of the refrigerant flow path 32 where the aspect ratio H/W of the cooling requirement is high may be 1 or more. This increases the difference in cooling efficiency between the portion of the refrigerant flow path 32 where the aspect ratio H/W is low and the portion of the refrigerant flow path 32 where the aspect ratio H/W is high.
  • the ceramic plate 20 is made of alumina
  • the cooling plate 30 is made of Ti or a Ti alloy. In this way, the difference in thermal expansion between the ceramic plate 20 and the cooling plate 30 is small, so warping of the wafer mounting table 10 can be suppressed.
  • a first material e.g., Ti
  • a second material with a thermal conductivity of 100 W/mK
  • a third material e.g., Al
  • the cross-sectional area was set constant at 80 cm2 , and four quadrangles (rectangles or squares) were used, each having a length of 6 mm x width of 13 mm (aspect ratio of about 0.5, first shape), a length of 7 mm x width of 11.5 mm (aspect ratio of about 0.6, second shape), a length of 9 mm x width of 9 mm (aspect ratio of 1, third shape), and a length of 11.5 mm x width of 7 mm (aspect ratio of about 1.6, fourth shape).
  • the surface temperature was obtained when the refrigerant flow passage was formed so that the upper surface of the refrigerant flow passage was present at a predetermined distance within 10 mm from the heat input part inside the cooling plate.
  • the results are shown in the graph of FIG. 5.
  • the vertical axis of this graph shows the difference in temperature from when the cross section of the refrigerant flow path is a square cross section (aspect ratio 1). From this graph, it was found that, for the first material with low thermal conductivity, if the cross-sectional area of the refrigerant flow path is the same, the lower the aspect ratio, the higher the cooling efficiency, and especially when the aspect ratio is 0.5 or less.
  • the cooling efficiency is high regardless of the aspect ratio, but when the aspect ratio is 0.6 or less, the cooling efficiency is slightly reduced.
  • the outer peripheral region 22a of the wafer mounting surface 22 has a shorter length D, a smaller flow path cross-sectional area S, and a smaller aspect ratio H/W than the central region 22b, but is not limited to this.
  • the magnitude relationship of the length D, the flow path cross-sectional area S, and the aspect ratio H/W may be set in any way.
  • the outer peripheral region 22a of the wafer mounting surface 22 may have a shorter length D, a smaller flow path cross-sectional area S, and a larger aspect ratio H/W than the central region 22b, or may have a shorter length D, a larger flow path cross-sectional area S, and a smaller aspect ratio H/W, or may have a longer length D, a smaller flow path cross-sectional area S, and a smaller aspect ratio H/W.
  • the outer peripheral region 22a of the wafer mounting surface 22 may have a shorter length D, a larger flow path cross-sectional area S, and a larger aspect ratio H/W than the central region 22b, or may have a longer length D, a smaller flow path cross-sectional area S, and a larger aspect ratio H/W, or may have a longer length D, a larger flow path cross-sectional area S, and a smaller aspect ratio H/W.
  • the heat exchange efficiency can be determined as follows. First, a first chiller capable of circulating a refrigerant while controlling the temperature of the refrigerant is connected to the inlet 32in and outlet 32out of the refrigerant flow path 32, and a refrigerant at the same temperature as room temperature (e.g., 25°C) is circulated through the refrigerant flow path 32. At the same time, a refrigerant at a predetermined temperature (e.g., 80 to 100°C) is prepared in the second chiller.
  • a predetermined temperature e.g. 80 to 100°C
  • a valve is used to switch from the refrigerant at the same temperature as room temperature to a refrigerant at the predetermined temperature, and the refrigerant at the predetermined temperature is circulated through the refrigerant flow path 32.
  • a predetermined time e.g. 10 seconds
  • the temperature rise rate is calculated from the temperature distribution, and the temperature rise rate is used as an index of the heat exchange efficiency.
  • the temperature rise rate of the outer peripheral region 22a of the wafer mounting surface 22 is 7.5°C/sec or more, and the temperature rise rate of the central region 22b is 5°C/sec or less. Therefore, it can be seen that the heat exchange efficiency of the outer peripheral region 22a is higher than that of the central region 22b.
  • the temperature rise rate of the boundary between the outer peripheral region 22a and the central region 22b is an intermediate value between the two.
  • the area with high cooling demand is the peripheral area 22a of the wafer mounting surface 22, and the area with low cooling demand is the central area 22b of the wafer mounting surface 22, but this is not particularly limited.
  • the electrostatic electrode 23 is built into the ceramic plate 20 at a position facing the wafer mounting surface 22.
  • an FR adsorption electrode for electrostatically adsorbing the focus ring 60 may be provided inside the ceramic plate 20 at a position facing the FR mounting surface 24.
  • the ceramic plate 20 is exemplified as having a wafer mounting surface 22 and an FR mounting surface 24, but is not particularly limited to this.
  • the ceramic plate 20 may have a wafer mounting surface 22 but not an FR mounting surface 24.
  • the outer diameter of the focus ring 60 is larger than the outer diameter of the wafer mounting table 10 (the outer diameter of the ceramic plate 20 and the outer diameter of the cooling plate 30), but this is not particularly limited.
  • the outer diameter of the focus ring 60 may be the same as the outer diameter of the wafer mounting table 10.
  • the refrigerant flow path 32 is formed in a spiral shape when viewed from above, but is not limited to this.
  • the refrigerant flow path 32 may be formed in a zigzag shape when viewed from above.
  • the wafer mounting table 10 is exemplified in which the electrostatic electrode 23 is built into the ceramic plate 20, but this is not particularly limited.
  • the ceramic plate 20 may be built into a heater electrode (resistive heating element), or a plasma generation electrode (RF electrode).
  • the wafer mounting table 10 may have a plurality of lift pin holes that penetrate the wafer mounting table 10 from top to bottom.
  • the lift pin holes are holes for inserting lift pins that move the wafer W up and down relative to the wafer mounting surface 22.
  • a plurality of lift pin holes are provided at equal intervals along concentric circles of the wafer mounting surface 22 when the wafer mounting surface 22 is viewed in a plan view.
  • fins 32a may be provided on the ceiling surface of the refrigerant flow path 32.
  • the fins 32a may be provided along the direction of the refrigerant flow path 32, either over the entire refrigerant flow path 32 or over a portion of the refrigerant flow path 32. Only one fin 32a may be provided, or two or more fins 32a may be provided.
  • the present invention can be used, for example, in an apparatus for plasma processing wafers.
  • 10 wafer mounting table 20 ceramic plate, 22 wafer mounting surface, 22a outer peripheral region, 22b central region, 23 electrostatic electrode, 24 focus ring mounting surface, 30 cooling plate, 32 coolant flow path, 32a fin, 32in inlet, 32mid midway position, 32out outlet, 32x part corresponding to outer peripheral region, 32y part corresponding to central region, 40 bonding layer, 60 focus ring, 62 circumferential groove, W wafer.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
PCT/JP2023/019273 2023-05-24 2023-05-24 ウエハ載置台 Ceased WO2024241516A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/JP2023/019273 WO2024241516A1 (ja) 2023-05-24 2023-05-24 ウエハ載置台
CN202380012895.8A CN121175793A (zh) 2023-05-24 2023-05-24 晶片载放台
KR1020247005381A KR20240170521A (ko) 2023-05-24 2023-05-24 웨이퍼 적재대
JP2024508967A JP7675281B2 (ja) 2023-05-24 2023-05-24 ウエハ載置台
US18/441,111 US20240395511A1 (en) 2023-05-24 2024-02-14 Wafer placement table
TW113114104A TW202447830A (zh) 2023-05-24 2024-04-16 晶圓載置台

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/019273 WO2024241516A1 (ja) 2023-05-24 2023-05-24 ウエハ載置台

Related Child Applications (1)

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US18/441,111 Continuation US20240395511A1 (en) 2023-05-24 2024-02-14 Wafer placement table

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WO2024241516A1 true WO2024241516A1 (ja) 2024-11-28

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JP (1) JP7675281B2 (https=)
KR (1) KR20240170521A (https=)
CN (1) CN121175793A (https=)
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WO (1) WO2024241516A1 (https=)

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WO2014017661A1 (ja) * 2012-07-27 2014-01-30 京セラ株式会社 流路部材およびこれを用いた熱交換器ならびに半導体製造装置
JP2022525028A (ja) * 2019-03-08 2022-05-11 ラム リサーチ コーポレーション プラズマ処理チャンバ用のチャック
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TW202447830A (zh) 2024-12-01
JP7675281B2 (ja) 2025-05-12
JPWO2024241516A1 (https=) 2024-11-28
CN121175793A (zh) 2025-12-19
KR20240170521A (ko) 2024-12-03
US20240395511A1 (en) 2024-11-28

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