KR20240170521A - 웨이퍼 적재대 - Google Patents

웨이퍼 적재대 Download PDF

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Publication number
KR20240170521A
KR20240170521A KR1020247005381A KR20247005381A KR20240170521A KR 20240170521 A KR20240170521 A KR 20240170521A KR 1020247005381 A KR1020247005381 A KR 1020247005381A KR 20247005381 A KR20247005381 A KR 20247005381A KR 20240170521 A KR20240170521 A KR 20240170521A
Authority
KR
South Korea
Prior art keywords
wafer loading
loading surface
aspect ratio
cross
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020247005381A
Other languages
English (en)
Korean (ko)
Inventor
다로 우사미
요헤이 가지우라
Original Assignee
엔지케이 인슐레이터 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엔지케이 인슐레이터 엘티디 filed Critical 엔지케이 인슐레이터 엘티디
Publication of KR20240170521A publication Critical patent/KR20240170521A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H01L21/683—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H01L21/4871—
    • H01L21/67017—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020247005381A 2023-05-24 2023-05-24 웨이퍼 적재대 Ceased KR20240170521A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/019273 WO2024241516A1 (ja) 2023-05-24 2023-05-24 ウエハ載置台

Publications (1)

Publication Number Publication Date
KR20240170521A true KR20240170521A (ko) 2024-12-03

Family

ID=93565239

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247005381A Ceased KR20240170521A (ko) 2023-05-24 2023-05-24 웨이퍼 적재대

Country Status (6)

Country Link
US (1) US20240395511A1 (https=)
JP (1) JP7675281B2 (https=)
KR (1) KR20240170521A (https=)
CN (1) CN121175793A (https=)
TW (1) TW202447830A (https=)
WO (1) WO2024241516A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025176267A (ja) * 2024-05-21 2025-12-04 Toto株式会社 静電チャック

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021028961A (ja) 2019-08-09 2021-02-25 東京エレクトロン株式会社 載置台及び基板処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
JP5210706B2 (ja) * 2008-05-09 2013-06-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6175437B2 (ja) * 2012-07-27 2017-08-02 京セラ株式会社 流路部材およびこれを用いた熱交換器ならびに半導体製造装置
JP5936165B2 (ja) * 2014-11-07 2016-06-15 Toto株式会社 静電チャックおよびウェーハ処理装置
WO2016197083A1 (en) * 2015-06-05 2016-12-08 Watlow Electric Manufacturing Company High thermal conductivity wafer support pedestal device
KR20170055822A (ko) * 2015-11-12 2017-05-22 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
KR20210128002A (ko) * 2019-03-08 2021-10-25 램 리써치 코포레이션 플라즈마 프로세싱 챔버를 위한 척
JP6839314B2 (ja) * 2019-03-19 2021-03-03 日本碍子株式会社 ウエハ載置装置及びその製法
JP7688551B2 (ja) * 2021-09-20 2025-06-04 日本特殊陶業株式会社 保持部材及びその製造方法
JP7496343B2 (ja) * 2021-11-08 2024-06-06 日本碍子株式会社 ウエハ載置台
JP7620593B2 (ja) * 2022-04-26 2025-01-23 日本碍子株式会社 ウエハ載置台
US20240408712A1 (en) * 2023-06-06 2024-12-12 Applied Materials, Inc. Ceramic cooling base

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021028961A (ja) 2019-08-09 2021-02-25 東京エレクトロン株式会社 載置台及び基板処理装置

Also Published As

Publication number Publication date
TW202447830A (zh) 2024-12-01
JP7675281B2 (ja) 2025-05-12
JPWO2024241516A1 (https=) 2024-11-28
CN121175793A (zh) 2025-12-19
US20240395511A1 (en) 2024-11-28
WO2024241516A1 (ja) 2024-11-28

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