CN121175793A - 晶片载放台 - Google Patents

晶片载放台

Info

Publication number
CN121175793A
CN121175793A CN202380012895.8A CN202380012895A CN121175793A CN 121175793 A CN121175793 A CN 121175793A CN 202380012895 A CN202380012895 A CN 202380012895A CN 121175793 A CN121175793 A CN 121175793A
Authority
CN
China
Prior art keywords
flow path
mounting surface
wafer
aspect ratio
wafer mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380012895.8A
Other languages
English (en)
Chinese (zh)
Inventor
宇佐美太朗
梶浦阳平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of CN121175793A publication Critical patent/CN121175793A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN202380012895.8A 2023-05-24 2023-05-24 晶片载放台 Pending CN121175793A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/019273 WO2024241516A1 (ja) 2023-05-24 2023-05-24 ウエハ載置台

Publications (1)

Publication Number Publication Date
CN121175793A true CN121175793A (zh) 2025-12-19

Family

ID=93565239

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380012895.8A Pending CN121175793A (zh) 2023-05-24 2023-05-24 晶片载放台

Country Status (6)

Country Link
US (1) US20240395511A1 (https=)
JP (1) JP7675281B2 (https=)
KR (1) KR20240170521A (https=)
CN (1) CN121175793A (https=)
TW (1) TW202447830A (https=)
WO (1) WO2024241516A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025176267A (ja) * 2024-05-21 2025-12-04 Toto株式会社 静電チャック

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
JP5210706B2 (ja) * 2008-05-09 2013-06-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6175437B2 (ja) * 2012-07-27 2017-08-02 京セラ株式会社 流路部材およびこれを用いた熱交換器ならびに半導体製造装置
JP5936165B2 (ja) * 2014-11-07 2016-06-15 Toto株式会社 静電チャックおよびウェーハ処理装置
WO2016197083A1 (en) * 2015-06-05 2016-12-08 Watlow Electric Manufacturing Company High thermal conductivity wafer support pedestal device
KR20170055822A (ko) * 2015-11-12 2017-05-22 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
KR20210128002A (ko) * 2019-03-08 2021-10-25 램 리써치 코포레이션 플라즈마 프로세싱 챔버를 위한 척
JP6839314B2 (ja) * 2019-03-19 2021-03-03 日本碍子株式会社 ウエハ載置装置及びその製法
JP7365815B2 (ja) 2019-08-09 2023-10-20 東京エレクトロン株式会社 載置台及び基板処理装置
JP7688551B2 (ja) * 2021-09-20 2025-06-04 日本特殊陶業株式会社 保持部材及びその製造方法
JP7496343B2 (ja) * 2021-11-08 2024-06-06 日本碍子株式会社 ウエハ載置台
JP7620593B2 (ja) * 2022-04-26 2025-01-23 日本碍子株式会社 ウエハ載置台
US20240408712A1 (en) * 2023-06-06 2024-12-12 Applied Materials, Inc. Ceramic cooling base

Also Published As

Publication number Publication date
TW202447830A (zh) 2024-12-01
JP7675281B2 (ja) 2025-05-12
JPWO2024241516A1 (https=) 2024-11-28
KR20240170521A (ko) 2024-12-03
US20240395511A1 (en) 2024-11-28
WO2024241516A1 (ja) 2024-11-28

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