JP7673053B2 - 半導体ウェハホルダー用熱拡散板 - Google Patents

半導体ウェハホルダー用熱拡散板 Download PDF

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Publication number
JP7673053B2
JP7673053B2 JP2022513132A JP2022513132A JP7673053B2 JP 7673053 B2 JP7673053 B2 JP 7673053B2 JP 2022513132 A JP2022513132 A JP 2022513132A JP 2022513132 A JP2022513132 A JP 2022513132A JP 7673053 B2 JP7673053 B2 JP 7673053B2
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Prior art keywords
diffusion layer
heater
diffusion
electrostatic
layer
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Japanese (ja)
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JPWO2021041643A5 (https=
JP2022545723A5 (https=
JP2022545723A (ja
Inventor
チャン、サンホン
プタシエンスキ、ケビン
ワリンガー、マーティン
パーキンソン、ブレイク
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ワットロー・エレクトリック・マニュファクチャリング・カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/146—Conductive polymers, e.g. polyethylene, thermoplastics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
JP2022513132A 2019-08-27 2020-08-27 半導体ウェハホルダー用熱拡散板 Active JP7673053B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/552,790 US11515190B2 (en) 2019-08-27 2019-08-27 Thermal diffuser for a semiconductor wafer holder
US16/552,790 2019-08-27
PCT/US2020/048159 WO2021041643A1 (en) 2019-08-27 2020-08-27 Thermal diffuser for a semiconductor wafer holder

Publications (4)

Publication Number Publication Date
JP2022545723A JP2022545723A (ja) 2022-10-28
JPWO2021041643A5 JPWO2021041643A5 (https=) 2023-09-04
JP2022545723A5 JP2022545723A5 (https=) 2023-09-04
JP7673053B2 true JP7673053B2 (ja) 2025-05-08

Family

ID=72428372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022513132A Active JP7673053B2 (ja) 2019-08-27 2020-08-27 半導体ウェハホルダー用熱拡散板

Country Status (8)

Country Link
US (2) US11515190B2 (https=)
EP (1) EP4022672B1 (https=)
JP (1) JP7673053B2 (https=)
KR (1) KR102524609B1 (https=)
CN (1) CN114521288B (https=)
MY (1) MY209515A (https=)
TW (1) TWI830942B (https=)
WO (1) WO2021041643A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515190B2 (en) * 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder
US11842918B2 (en) * 2019-10-02 2023-12-12 Canon Kabushiki Kaisha Wafer chuck, method for producing the same, and exposure apparatus
CN115478261B (zh) * 2021-05-31 2025-02-14 中微半导体设备(上海)股份有限公司 一种气体喷淋头及化学气相沉积设备
JP7848975B2 (ja) * 2022-06-24 2026-04-21 新光電気工業株式会社 基板固定装置
CN121753540A (zh) * 2023-08-29 2026-03-27 日本碍子株式会社 晶片载放台及其使用方法
US12583211B2 (en) 2023-09-22 2026-03-24 Applied Materials, Inc. Substrate support assembly with multiple discs
US12537464B2 (en) 2023-10-06 2026-01-27 Applied Materials, Inc. Substrate support assembly with dieletric cooling plate
WO2026006191A1 (en) * 2024-06-24 2026-01-02 Watlow Electric Manufacturing Company Method for early thermal performance assessment of a heater component

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020196596A1 (en) 2001-06-20 2002-12-26 Parkhe Vijay D. Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same
JP2006140455A (ja) 2004-10-07 2006-06-01 Applied Materials Inc 基板の温度を制御する方法及び装置
JP2014510392A (ja) 2011-01-27 2014-04-24 アプライド マテリアルズ インコーポレイテッド ヒータを備え急速に温度変化する基板支持体
JP2014130908A (ja) 2012-12-28 2014-07-10 Ngk Spark Plug Co Ltd 静電チャック
JP2014529910A (ja) 2011-08-30 2014-11-13 ワトロウ エレクトリック マニュファクチュアリング カンパニー 高精度ヒータおよびその動作方法
JP2017041628A (ja) 2015-08-17 2017-02-23 エーエスエム アイピー ホールディング ビー．ブイ． サセプタ、基板処理装置
JP2017174987A (ja) 2016-03-24 2017-09-28 住友大阪セメント株式会社 静電チャック装置

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US5155652A (en) 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
JP3825277B2 (ja) * 2001-05-25 2006-09-27 東京エレクトロン株式会社 加熱処理装置
JP3742349B2 (ja) * 2002-02-15 2006-02-01 株式会社日立製作所 プラズマ処理装置
JP2003243490A (ja) * 2002-02-18 2003-08-29 Hitachi High-Technologies Corp ウエハ処理装置とウエハステージ及びウエハ処理方法
US20050042881A1 (en) * 2003-05-12 2005-02-24 Tokyo Electron Limited Processing apparatus
EP1676309A1 (en) * 2003-10-09 2006-07-05 SNT Co., Ltd. Electro-static chuck with non-sintered aln and a method of preparing the same
KR20090001685A (ko) * 2007-05-10 2009-01-09 (주) 컴파스 시스템 컴퓨터 신호에 따른 화상을 화면에 출력하는 광고장치 및이에 적합한 광고 방법
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
JP2009291793A (ja) * 2008-06-02 2009-12-17 Kuroki Kogyosho:Kk 構造体の製造法
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US10154542B2 (en) 2015-10-19 2018-12-11 Watlow Electric Manufacturing Company Composite device with cylindrical anisotropic thermal conductivity
CN108475656B (zh) * 2015-12-28 2023-09-05 日本碍子株式会社 圆盘状加热器以及加热器冷却板组件
KR102360248B1 (ko) * 2016-05-10 2022-02-07 램 리써치 코포레이션 상이한 히터 트레이스 재료를 사용한 적층된 히터
KR20180001685A (ko) * 2016-06-27 2018-01-05 세메스 주식회사 기판 지지체 및 이를 갖는 베이크 유닛
TWI791558B (zh) * 2017-07-27 2023-02-11 美商應用材料股份有限公司 用於半導體基板處理室的溫度控制的方法、非暫時性機器可讀儲存媒體以及系統
US11515190B2 (en) * 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020196596A1 (en) 2001-06-20 2002-12-26 Parkhe Vijay D. Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same
JP2006140455A (ja) 2004-10-07 2006-06-01 Applied Materials Inc 基板の温度を制御する方法及び装置
JP2014510392A (ja) 2011-01-27 2014-04-24 アプライド マテリアルズ インコーポレイテッド ヒータを備え急速に温度変化する基板支持体
JP2014529910A (ja) 2011-08-30 2014-11-13 ワトロウ エレクトリック マニュファクチュアリング カンパニー 高精度ヒータおよびその動作方法
JP2014130908A (ja) 2012-12-28 2014-07-10 Ngk Spark Plug Co Ltd 静電チャック
JP2017041628A (ja) 2015-08-17 2017-02-23 エーエスエム アイピー ホールディング ビー．ブイ． サセプタ、基板処理装置
JP2017174987A (ja) 2016-03-24 2017-09-28 住友大阪セメント株式会社 静電チャック装置

Also Published As

Publication number Publication date
EP4022672C0 (en) 2024-06-12
KR20220052998A (ko) 2022-04-28
KR102524609B1 (ko) 2023-04-21
EP4022672A1 (en) 2022-07-06
US12148650B2 (en) 2024-11-19
EP4022672B1 (en) 2024-06-12
WO2021041643A1 (en) 2021-03-04
US20210066107A1 (en) 2021-03-04
US20230139249A1 (en) 2023-05-04
US11515190B2 (en) 2022-11-29
TWI830942B (zh) 2024-02-01
CN114521288B (zh) 2023-06-06
JP2022545723A (ja) 2022-10-28
MY209515A (en) 2025-07-16
CN114521288A (zh) 2022-05-20
TW202123379A (zh) 2021-06-16

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