CN114521288B - 用于半导体晶片固持器的热扩散器 - Google Patents

用于半导体晶片固持器的热扩散器 Download PDF

Info

Publication number
CN114521288B
CN114521288B CN202080067700.6A CN202080067700A CN114521288B CN 114521288 B CN114521288 B CN 114521288B CN 202080067700 A CN202080067700 A CN 202080067700A CN 114521288 B CN114521288 B CN 114521288B
Authority
CN
China
Prior art keywords
diffuser
layer
heater
electrostatic chuck
diffuser layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080067700.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN114521288A (zh
Inventor
章三红
凯文·帕塔斯恩斯基
马丁·沃林格
布莱克·帕金森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Watlow Electric Manufacturing Co
Original Assignee
Watlow Electric Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watlow Electric Manufacturing Co filed Critical Watlow Electric Manufacturing Co
Publication of CN114521288A publication Critical patent/CN114521288A/zh
Application granted granted Critical
Publication of CN114521288B publication Critical patent/CN114521288B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/146—Conductive polymers, e.g. polyethylene, thermoplastics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
CN202080067700.6A 2019-08-27 2020-08-27 用于半导体晶片固持器的热扩散器 Active CN114521288B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/552,790 US11515190B2 (en) 2019-08-27 2019-08-27 Thermal diffuser for a semiconductor wafer holder
US16/552,790 2019-08-27
PCT/US2020/048159 WO2021041643A1 (en) 2019-08-27 2020-08-27 Thermal diffuser for a semiconductor wafer holder

Publications (2)

Publication Number Publication Date
CN114521288A CN114521288A (zh) 2022-05-20
CN114521288B true CN114521288B (zh) 2023-06-06

Family

ID=72428372

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080067700.6A Active CN114521288B (zh) 2019-08-27 2020-08-27 用于半导体晶片固持器的热扩散器

Country Status (8)

Country Link
US (2) US11515190B2 (https=)
EP (1) EP4022672B1 (https=)
JP (1) JP7673053B2 (https=)
KR (1) KR102524609B1 (https=)
CN (1) CN114521288B (https=)
MY (1) MY209515A (https=)
TW (1) TWI830942B (https=)
WO (1) WO2021041643A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515190B2 (en) * 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder
US11842918B2 (en) * 2019-10-02 2023-12-12 Canon Kabushiki Kaisha Wafer chuck, method for producing the same, and exposure apparatus
CN115478261B (zh) * 2021-05-31 2025-02-14 中微半导体设备(上海)股份有限公司 一种气体喷淋头及化学气相沉积设备
JP7848975B2 (ja) * 2022-06-24 2026-04-21 新光電気工業株式会社 基板固定装置
CN121753540A (zh) * 2023-08-29 2026-03-27 日本碍子株式会社 晶片载放台及其使用方法
US12583211B2 (en) 2023-09-22 2026-03-24 Applied Materials, Inc. Substrate support assembly with multiple discs
US12537464B2 (en) 2023-10-06 2026-01-27 Applied Materials, Inc. Substrate support assembly with dieletric cooling plate
WO2026006191A1 (en) * 2024-06-24 2026-01-02 Watlow Electric Manufacturing Company Method for early thermal performance assessment of a heater component

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0512936A1 (en) * 1991-05-02 1992-11-11 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
CN1779938A (zh) * 2004-10-07 2006-05-31 应用材料公司 控制衬底温度的方法和装置
JP2009291793A (ja) * 2008-06-02 2009-12-17 Kuroki Kogyosho:Kk 構造体の製造法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3825277B2 (ja) * 2001-05-25 2006-09-27 東京エレクトロン株式会社 加熱処理装置
US6535372B2 (en) * 2001-06-20 2003-03-18 Applied Materials, Inc. Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same
JP3742349B2 (ja) * 2002-02-15 2006-02-01 株式会社日立製作所 プラズマ処理装置
JP2003243490A (ja) * 2002-02-18 2003-08-29 Hitachi High-Technologies Corp ウエハ処理装置とウエハステージ及びウエハ処理方法
US20050042881A1 (en) * 2003-05-12 2005-02-24 Tokyo Electron Limited Processing apparatus
EP1676309A1 (en) * 2003-10-09 2006-07-05 SNT Co., Ltd. Electro-static chuck with non-sintered aln and a method of preparing the same
KR20090001685A (ko) * 2007-05-10 2009-01-09 (주) 컴파스 시스템 컴퓨터 신호에 따른 화상을 화면에 출력하는 광고장치 및이에 적합한 광고 방법
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US20120196242A1 (en) * 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
WO2013033340A1 (en) * 2011-08-30 2013-03-07 Watlow Electric Manufacturing Company Thermal array system
JP6077301B2 (ja) * 2012-12-28 2017-02-08 日本特殊陶業株式会社 静電チャック
US20170051402A1 (en) * 2015-08-17 2017-02-23 Asm Ip Holding B.V. Susceptor and substrate processing apparatus
US10154542B2 (en) 2015-10-19 2018-12-11 Watlow Electric Manufacturing Company Composite device with cylindrical anisotropic thermal conductivity
CN108475656B (zh) * 2015-12-28 2023-09-05 日本碍子株式会社 圆盘状加热器以及加热器冷却板组件
JP6597437B2 (ja) 2016-03-24 2019-10-30 住友大阪セメント株式会社 静電チャック装置
KR102360248B1 (ko) * 2016-05-10 2022-02-07 램 리써치 코포레이션 상이한 히터 트레이스 재료를 사용한 적층된 히터
KR20180001685A (ko) * 2016-06-27 2018-01-05 세메스 주식회사 기판 지지체 및 이를 갖는 베이크 유닛
TWI791558B (zh) * 2017-07-27 2023-02-11 美商應用材料股份有限公司 用於半導體基板處理室的溫度控制的方法、非暫時性機器可讀儲存媒體以及系統
US11515190B2 (en) * 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0512936A1 (en) * 1991-05-02 1992-11-11 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
CN1779938A (zh) * 2004-10-07 2006-05-31 应用材料公司 控制衬底温度的方法和装置
JP2009291793A (ja) * 2008-06-02 2009-12-17 Kuroki Kogyosho:Kk 構造体の製造法

Also Published As

Publication number Publication date
EP4022672C0 (en) 2024-06-12
KR20220052998A (ko) 2022-04-28
KR102524609B1 (ko) 2023-04-21
EP4022672A1 (en) 2022-07-06
US12148650B2 (en) 2024-11-19
EP4022672B1 (en) 2024-06-12
WO2021041643A1 (en) 2021-03-04
JP7673053B2 (ja) 2025-05-08
US20210066107A1 (en) 2021-03-04
US20230139249A1 (en) 2023-05-04
US11515190B2 (en) 2022-11-29
TWI830942B (zh) 2024-02-01
JP2022545723A (ja) 2022-10-28
MY209515A (en) 2025-07-16
CN114521288A (zh) 2022-05-20
TW202123379A (zh) 2021-06-16

Similar Documents

Publication Publication Date Title
CN114521288B (zh) 用于半导体晶片固持器的热扩散器
TWI702685B (zh) 極端均勻加熱基板支撐組件
KR101800337B1 (ko) 정전 척 장치
CN102741998B (zh) 静电卡盘装置
JP6052169B2 (ja) 静電チャック装置
TWI660453B (zh) 用於高溫處理之靜電吸座組件
US7068489B2 (en) Electrostatic chuck for holding wafer
US10079167B2 (en) Electrostatic chucking device
EP1602635A1 (en) Manufacturing method for sintered body with buried metallic member
KR20150099796A (ko) 단일-본체 정전 척
CN112789714B (zh) 可拆卸的热矫平器
JP5846186B2 (ja) 静電チャック装置および静電チャック装置の製造方法
CN114521289A (zh) 静电吸盘及其制造方法
JP2002025912A (ja) 半導体製造装置用サセプタとそれを用いた半導体製造装置
JP3810341B2 (ja) 静電チャック
JP2002025913A (ja) 半導体製造装置用サセプタとそれを用いた半導体製造装置
KR20250048314A (ko) 정전 척을 위한 진공 밀봉

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant