TWI830942B - 用於半導體晶圓固持器之熱擴散器 - Google Patents

用於半導體晶圓固持器之熱擴散器 Download PDF

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Publication number
TWI830942B
TWI830942B TW109129211A TW109129211A TWI830942B TW I830942 B TWI830942 B TW I830942B TW 109129211 A TW109129211 A TW 109129211A TW 109129211 A TW109129211 A TW 109129211A TW I830942 B TWI830942 B TW I830942B
Authority
TW
Taiwan
Prior art keywords
diffusion
layer
heater
disk
electrostatic
Prior art date
Application number
TW109129211A
Other languages
English (en)
Chinese (zh)
Other versions
TW202123379A (zh
Inventor
三紅 章
凱文 皮塔賽恩斯基
馬丁 瓦林格
布雷克 帕金森
Original Assignee
美商瓦特洛威電子製造公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商瓦特洛威電子製造公司 filed Critical 美商瓦特洛威電子製造公司
Publication of TW202123379A publication Critical patent/TW202123379A/zh
Application granted granted Critical
Publication of TWI830942B publication Critical patent/TWI830942B/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/02Coating starting from inorganic powder by application of pressure only
    • C23C24/04Impact or kinetic deposition of particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/146Conductive polymers, e.g. polyethylene, thermoplastics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
TW109129211A 2019-08-27 2020-08-26 用於半導體晶圓固持器之熱擴散器 TWI830942B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/552,790 US11515190B2 (en) 2019-08-27 2019-08-27 Thermal diffuser for a semiconductor wafer holder
US16/552,790 2019-08-27

Publications (2)

Publication Number Publication Date
TW202123379A TW202123379A (zh) 2021-06-16
TWI830942B true TWI830942B (zh) 2024-02-01

Family

ID=72428372

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109129211A TWI830942B (zh) 2019-08-27 2020-08-26 用於半導體晶圓固持器之熱擴散器

Country Status (8)

Country Link
US (2) US11515190B2 (https=)
EP (1) EP4022672B1 (https=)
JP (1) JP7673053B2 (https=)
KR (1) KR102524609B1 (https=)
CN (1) CN114521288B (https=)
MY (1) MY209515A (https=)
TW (1) TWI830942B (https=)
WO (1) WO2021041643A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515190B2 (en) * 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder
US11842918B2 (en) * 2019-10-02 2023-12-12 Canon Kabushiki Kaisha Wafer chuck, method for producing the same, and exposure apparatus
CN115478261B (zh) * 2021-05-31 2025-02-14 中微半导体设备(上海)股份有限公司 一种气体喷淋头及化学气相沉积设备
JP7848975B2 (ja) * 2022-06-24 2026-04-21 新光電気工業株式会社 基板固定装置
CN121753540A (zh) * 2023-08-29 2026-03-27 日本碍子株式会社 晶片载放台及其使用方法
US12583211B2 (en) 2023-09-22 2026-03-24 Applied Materials, Inc. Substrate support assembly with multiple discs
US12537464B2 (en) 2023-10-06 2026-01-27 Applied Materials, Inc. Substrate support assembly with dieletric cooling plate
WO2026006191A1 (en) * 2024-06-24 2026-01-02 Watlow Electric Manufacturing Company Method for early thermal performance assessment of a heater component

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060076108A1 (en) * 2004-10-07 2006-04-13 John Holland Method and apparatus for controlling temperature of a substrate
TW201737388A (zh) * 2015-12-28 2017-10-16 日本碍子股份有限公司 圓板狀加熱器及加熱器冷卻板總成
TW201806441A (zh) * 2016-05-10 2018-02-16 蘭姆研究公司 層疊式加熱器與加熱器電壓輸入部之間的連接
TW201921202A (zh) * 2017-07-27 2019-06-01 美商應用材料股份有限公司 具有熱控制的處理室及方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155652A (en) 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
JP3825277B2 (ja) * 2001-05-25 2006-09-27 東京エレクトロン株式会社 加熱処理装置
US6535372B2 (en) * 2001-06-20 2003-03-18 Applied Materials, Inc. Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same
JP3742349B2 (ja) * 2002-02-15 2006-02-01 株式会社日立製作所 プラズマ処理装置
JP2003243490A (ja) * 2002-02-18 2003-08-29 Hitachi High-Technologies Corp ウエハ処理装置とウエハステージ及びウエハ処理方法
US20050042881A1 (en) * 2003-05-12 2005-02-24 Tokyo Electron Limited Processing apparatus
EP1676309A1 (en) * 2003-10-09 2006-07-05 SNT Co., Ltd. Electro-static chuck with non-sintered aln and a method of preparing the same
KR20090001685A (ko) * 2007-05-10 2009-01-09 (주) 컴파스 시스템 컴퓨터 신호에 따른 화상을 화면에 출력하는 광고장치 및이에 적합한 광고 방법
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
JP2009291793A (ja) * 2008-06-02 2009-12-17 Kuroki Kogyosho:Kk 構造体の製造法
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US20120196242A1 (en) * 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
WO2013033340A1 (en) * 2011-08-30 2013-03-07 Watlow Electric Manufacturing Company Thermal array system
JP6077301B2 (ja) * 2012-12-28 2017-02-08 日本特殊陶業株式会社 静電チャック
US20170051402A1 (en) * 2015-08-17 2017-02-23 Asm Ip Holding B.V. Susceptor and substrate processing apparatus
US10154542B2 (en) 2015-10-19 2018-12-11 Watlow Electric Manufacturing Company Composite device with cylindrical anisotropic thermal conductivity
JP6597437B2 (ja) 2016-03-24 2019-10-30 住友大阪セメント株式会社 静電チャック装置
KR20180001685A (ko) * 2016-06-27 2018-01-05 세메스 주식회사 기판 지지체 및 이를 갖는 베이크 유닛
US11515190B2 (en) * 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060076108A1 (en) * 2004-10-07 2006-04-13 John Holland Method and apparatus for controlling temperature of a substrate
TW201737388A (zh) * 2015-12-28 2017-10-16 日本碍子股份有限公司 圓板狀加熱器及加熱器冷卻板總成
TW201806441A (zh) * 2016-05-10 2018-02-16 蘭姆研究公司 層疊式加熱器與加熱器電壓輸入部之間的連接
TW201921202A (zh) * 2017-07-27 2019-06-01 美商應用材料股份有限公司 具有熱控制的處理室及方法

Also Published As

Publication number Publication date
EP4022672C0 (en) 2024-06-12
KR20220052998A (ko) 2022-04-28
KR102524609B1 (ko) 2023-04-21
EP4022672A1 (en) 2022-07-06
US12148650B2 (en) 2024-11-19
EP4022672B1 (en) 2024-06-12
WO2021041643A1 (en) 2021-03-04
JP7673053B2 (ja) 2025-05-08
US20210066107A1 (en) 2021-03-04
US20230139249A1 (en) 2023-05-04
US11515190B2 (en) 2022-11-29
CN114521288B (zh) 2023-06-06
JP2022545723A (ja) 2022-10-28
MY209515A (en) 2025-07-16
CN114521288A (zh) 2022-05-20
TW202123379A (zh) 2021-06-16

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