KR102524609B1 - 반도체 웨이퍼 홀더를 위한 열 디퓨저 - Google Patents

반도체 웨이퍼 홀더를 위한 열 디퓨저 Download PDF

Info

Publication number
KR102524609B1
KR102524609B1 KR1020227010171A KR20227010171A KR102524609B1 KR 102524609 B1 KR102524609 B1 KR 102524609B1 KR 1020227010171 A KR1020227010171 A KR 1020227010171A KR 20227010171 A KR20227010171 A KR 20227010171A KR 102524609 B1 KR102524609 B1 KR 102524609B1
Authority
KR
South Korea
Prior art keywords
diffuser
layer
heater
diffuser layer
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227010171A
Other languages
English (en)
Korean (ko)
Other versions
KR20220052998A (ko
Inventor
산홍 장
케빈 프타시엔스키
마틴 발링거
블레이크 파킨슨
Original Assignee
와틀로 일렉트릭 매뉴팩츄어링 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 와틀로 일렉트릭 매뉴팩츄어링 컴파니 filed Critical 와틀로 일렉트릭 매뉴팩츄어링 컴파니
Publication of KR20220052998A publication Critical patent/KR20220052998A/ko
Application granted granted Critical
Publication of KR102524609B1 publication Critical patent/KR102524609B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H01L21/67109—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/146—Conductive polymers, e.g. polyethylene, thermoplastics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
KR1020227010171A 2019-08-27 2020-08-27 반도체 웨이퍼 홀더를 위한 열 디퓨저 Active KR102524609B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/552,790 US11515190B2 (en) 2019-08-27 2019-08-27 Thermal diffuser for a semiconductor wafer holder
US16/552,790 2019-08-27
PCT/US2020/048159 WO2021041643A1 (en) 2019-08-27 2020-08-27 Thermal diffuser for a semiconductor wafer holder

Publications (2)

Publication Number Publication Date
KR20220052998A KR20220052998A (ko) 2022-04-28
KR102524609B1 true KR102524609B1 (ko) 2023-04-21

Family

ID=72428372

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227010171A Active KR102524609B1 (ko) 2019-08-27 2020-08-27 반도체 웨이퍼 홀더를 위한 열 디퓨저

Country Status (8)

Country Link
US (2) US11515190B2 (https=)
EP (1) EP4022672B1 (https=)
JP (1) JP7673053B2 (https=)
KR (1) KR102524609B1 (https=)
CN (1) CN114521288B (https=)
MY (1) MY209515A (https=)
TW (1) TWI830942B (https=)
WO (1) WO2021041643A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515190B2 (en) * 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder
US11842918B2 (en) * 2019-10-02 2023-12-12 Canon Kabushiki Kaisha Wafer chuck, method for producing the same, and exposure apparatus
CN115478261B (zh) * 2021-05-31 2025-02-14 中微半导体设备(上海)股份有限公司 一种气体喷淋头及化学气相沉积设备
JP7848975B2 (ja) * 2022-06-24 2026-04-21 新光電気工業株式会社 基板固定装置
CN121753540A (zh) * 2023-08-29 2026-03-27 日本碍子株式会社 晶片载放台及其使用方法
US12583211B2 (en) 2023-09-22 2026-03-24 Applied Materials, Inc. Substrate support assembly with multiple discs
US12537464B2 (en) 2023-10-06 2026-01-27 Applied Materials, Inc. Substrate support assembly with dieletric cooling plate
WO2026006191A1 (en) * 2024-06-24 2026-01-02 Watlow Electric Manufacturing Company Method for early thermal performance assessment of a heater component

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243490A (ja) 2002-02-18 2003-08-29 Hitachi High-Technologies Corp ウエハ処理装置とウエハステージ及びウエハ処理方法
JP2003243371A (ja) 2002-02-15 2003-08-29 Hitachi Ltd プラズマ処理装置
JP2012508991A (ja) 2008-11-12 2012-04-12 ラム リサーチ コーポレーション 液体を制御された複数領域基板支持体による改良基板温度制御

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155652A (en) 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
JP3825277B2 (ja) * 2001-05-25 2006-09-27 東京エレクトロン株式会社 加熱処理装置
US6535372B2 (en) * 2001-06-20 2003-03-18 Applied Materials, Inc. Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same
US20050042881A1 (en) * 2003-05-12 2005-02-24 Tokyo Electron Limited Processing apparatus
EP1676309A1 (en) * 2003-10-09 2006-07-05 SNT Co., Ltd. Electro-static chuck with non-sintered aln and a method of preparing the same
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
KR20090001685A (ko) * 2007-05-10 2009-01-09 (주) 컴파스 시스템 컴퓨터 신호에 따른 화상을 화면에 출력하는 광고장치 및이에 적합한 광고 방법
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
JP2009291793A (ja) * 2008-06-02 2009-12-17 Kuroki Kogyosho:Kk 構造体の製造法
US20120196242A1 (en) * 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
WO2013033340A1 (en) * 2011-08-30 2013-03-07 Watlow Electric Manufacturing Company Thermal array system
JP6077301B2 (ja) * 2012-12-28 2017-02-08 日本特殊陶業株式会社 静電チャック
US20170051402A1 (en) * 2015-08-17 2017-02-23 Asm Ip Holding B.V. Susceptor and substrate processing apparatus
US10154542B2 (en) 2015-10-19 2018-12-11 Watlow Electric Manufacturing Company Composite device with cylindrical anisotropic thermal conductivity
CN108475656B (zh) * 2015-12-28 2023-09-05 日本碍子株式会社 圆盘状加热器以及加热器冷却板组件
JP6597437B2 (ja) 2016-03-24 2019-10-30 住友大阪セメント株式会社 静電チャック装置
KR102360248B1 (ko) * 2016-05-10 2022-02-07 램 리써치 코포레이션 상이한 히터 트레이스 재료를 사용한 적층된 히터
KR20180001685A (ko) * 2016-06-27 2018-01-05 세메스 주식회사 기판 지지체 및 이를 갖는 베이크 유닛
TWI791558B (zh) * 2017-07-27 2023-02-11 美商應用材料股份有限公司 用於半導體基板處理室的溫度控制的方法、非暫時性機器可讀儲存媒體以及系統
US11515190B2 (en) * 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243371A (ja) 2002-02-15 2003-08-29 Hitachi Ltd プラズマ処理装置
JP2003243490A (ja) 2002-02-18 2003-08-29 Hitachi High-Technologies Corp ウエハ処理装置とウエハステージ及びウエハ処理方法
JP2012508991A (ja) 2008-11-12 2012-04-12 ラム リサーチ コーポレーション 液体を制御された複数領域基板支持体による改良基板温度制御

Also Published As

Publication number Publication date
EP4022672C0 (en) 2024-06-12
KR20220052998A (ko) 2022-04-28
EP4022672A1 (en) 2022-07-06
US12148650B2 (en) 2024-11-19
EP4022672B1 (en) 2024-06-12
WO2021041643A1 (en) 2021-03-04
JP7673053B2 (ja) 2025-05-08
US20210066107A1 (en) 2021-03-04
US20230139249A1 (en) 2023-05-04
US11515190B2 (en) 2022-11-29
TWI830942B (zh) 2024-02-01
CN114521288B (zh) 2023-06-06
JP2022545723A (ja) 2022-10-28
MY209515A (en) 2025-07-16
CN114521288A (zh) 2022-05-20
TW202123379A (zh) 2021-06-16

Similar Documents

Publication Publication Date Title
KR102524609B1 (ko) 반도체 웨이퍼 홀더를 위한 열 디퓨저
KR102471635B1 (ko) 극도의 균일성의 가열식 기판 지지 조립체
KR101800337B1 (ko) 정전 척 장치
TWI518835B (zh) 靜電吸盤裝置
KR101905158B1 (ko) 국부적으로 가열되는 다-구역 기판 지지부
KR101769062B1 (ko) 정전 척 장치
KR101663844B1 (ko) 정전 척에 대해 사용하기 위한 클로킹가능 디바이스
KR102183029B1 (ko) 단일-본체 정전 척
US10079167B2 (en) Electrostatic chucking device
JP5846186B2 (ja) 静電チャック装置および静電チャック装置の製造方法
EP4029053B1 (en) Electrostatic puck and method of manufacture
US9543183B2 (en) Heated electrostatic chuck and semiconductor wafer heater and methods for manufacturing same
KR20250048314A (ko) 정전 척을 위한 진공 밀봉

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 4