JP7645241B2 - 研磨用組成物 - Google Patents

研磨用組成物 Download PDF

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Publication number
JP7645241B2
JP7645241B2 JP2022511840A JP2022511840A JP7645241B2 JP 7645241 B2 JP7645241 B2 JP 7645241B2 JP 2022511840 A JP2022511840 A JP 2022511840A JP 2022511840 A JP2022511840 A JP 2022511840A JP 7645241 B2 JP7645241 B2 JP 7645241B2
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JP
Japan
Prior art keywords
polishing
particles
less
polishing composition
acid
Prior art date
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Active
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JP2022511840A
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English (en)
Japanese (ja)
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JPWO2021200148A1 (https=
Inventor
信一郎 高見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of JPWO2021200148A1 publication Critical patent/JPWO2021200148A1/ja
Application granted granted Critical
Publication of JP7645241B2 publication Critical patent/JP7645241B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2022511840A 2020-03-30 2021-03-17 研磨用組成物 Active JP7645241B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020060778 2020-03-30
JP2020060778 2020-03-30
PCT/JP2021/010795 WO2021200148A1 (ja) 2020-03-30 2021-03-17 研磨用組成物

Publications (2)

Publication Number Publication Date
JPWO2021200148A1 JPWO2021200148A1 (https=) 2021-10-07
JP7645241B2 true JP7645241B2 (ja) 2025-03-13

Family

ID=77929320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022511840A Active JP7645241B2 (ja) 2020-03-30 2021-03-17 研磨用組成物

Country Status (7)

Country Link
US (2) US20230136485A1 (https=)
EP (1) EP4130190A4 (https=)
JP (1) JP7645241B2 (https=)
KR (1) KR20220156623A (https=)
CN (1) CN115380097B (https=)
TW (1) TWI890766B (https=)
WO (1) WO2021200148A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4410923A4 (en) * 2021-09-30 2025-10-01 Fujimi Inc POLISHING COMPOSITION
WO2023243905A1 (ko) * 2022-06-17 2023-12-21 주식회사 케이씨텍 실리콘 카바이드 웨이퍼용 연마 슬러리 조성물
WO2025205564A1 (ja) * 2024-03-28 2025-10-02 株式会社フジミインコーポレーテッド 研磨用組成物

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027663A (ja) 2005-07-21 2007-02-01 Fujimi Inc 研磨用組成物
WO2012147605A1 (ja) 2011-04-26 2012-11-01 旭硝子株式会社 非酸化物単結晶基板の研磨方法
WO2015045757A1 (ja) 2013-09-30 2015-04-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP2015199838A (ja) 2014-04-08 2015-11-12 山口精研工業株式会社 炭化ケイ素基板研磨用組成物
JP2015229750A (ja) 2014-06-06 2015-12-21 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP2017510977A (ja) 2014-02-05 2017-04-13 キャボット マイクロエレクトロニクス コーポレイション 窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法
WO2017212971A1 (ja) 2016-06-08 2017-12-14 三井金属鉱業株式会社 研摩液及び研摩物の製造方法
WO2019138846A1 (ja) 2018-01-11 2019-07-18 株式会社フジミインコーポレーテッド 研磨用組成物

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
US9368367B2 (en) * 2009-04-13 2016-06-14 Sinmat, Inc. Chemical mechanical polishing of silicon carbide comprising surfaces
JP5838083B2 (ja) * 2011-12-09 2015-12-24 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
TWI582184B (zh) * 2012-01-16 2017-05-11 福吉米股份有限公司 研磨用組成物、其製造方法、稀釋用原液、矽基板之製造方法、及矽基板
EP2915859A4 (en) * 2012-10-31 2015-10-28 Fujimi Inc POLISHING COMPOSITION
US20150114928A1 (en) * 2013-10-30 2015-04-30 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
JP2015203081A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物
US9567492B2 (en) * 2014-08-28 2017-02-14 Sinmat, Inc. Polishing of hard substrates with soft-core composite particles
JP6730859B2 (ja) * 2015-07-15 2020-07-29 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
US10138396B2 (en) * 2015-09-30 2018-11-27 Fujimi Incorporated Polishing composition
CN108713242A (zh) * 2016-03-01 2018-10-26 福吉米株式会社 硅基板的研磨方法及研磨用组合物套组
EP3604475B1 (en) * 2017-03-23 2025-06-04 Fujimi Incorporated Polishing composition
JP6825957B2 (ja) * 2017-03-28 2021-02-03 株式会社フジミインコーポレーテッド 研磨用組成物
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
JP2020060778A (ja) 2019-12-19 2020-04-16 株式会社ナビタイムジャパン 情報処理装置、情報処理システム、路線図情報生成プログラム、データ構造、および路線図情報生成方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027663A (ja) 2005-07-21 2007-02-01 Fujimi Inc 研磨用組成物
WO2012147605A1 (ja) 2011-04-26 2012-11-01 旭硝子株式会社 非酸化物単結晶基板の研磨方法
WO2015045757A1 (ja) 2013-09-30 2015-04-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP2017510977A (ja) 2014-02-05 2017-04-13 キャボット マイクロエレクトロニクス コーポレイション 窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法
JP2015199838A (ja) 2014-04-08 2015-11-12 山口精研工業株式会社 炭化ケイ素基板研磨用組成物
JP2015229750A (ja) 2014-06-06 2015-12-21 コニカミノルタ株式会社 Ｃｍｐ用研磨液
WO2017212971A1 (ja) 2016-06-08 2017-12-14 三井金属鉱業株式会社 研摩液及び研摩物の製造方法
WO2019138846A1 (ja) 2018-01-11 2019-07-18 株式会社フジミインコーポレーテッド 研磨用組成物

Also Published As

Publication number Publication date
JPWO2021200148A1 (https=) 2021-10-07
CN115380097A (zh) 2022-11-22
EP4130190A1 (en) 2023-02-08
WO2021200148A1 (ja) 2021-10-07
CN115380097B (zh) 2024-06-14
TWI890766B (zh) 2025-07-21
KR20220156623A (ko) 2022-11-25
EP4130190A4 (en) 2024-04-24
US20230136485A1 (en) 2023-05-04
US20260109881A1 (en) 2026-04-23
TW202138506A (zh) 2021-10-16

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