CN115380097B - 研磨用组合物 - Google Patents

研磨用组合物 Download PDF

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Publication number
CN115380097B
CN115380097B CN202180026914.3A CN202180026914A CN115380097B CN 115380097 B CN115380097 B CN 115380097B CN 202180026914 A CN202180026914 A CN 202180026914A CN 115380097 B CN115380097 B CN 115380097B
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CN
China
Prior art keywords
polishing
particles
polishing composition
less
acid
Prior art date
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Active
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CN202180026914.3A
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English (en)
Chinese (zh)
Other versions
CN115380097A (zh
Inventor
高见信一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
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Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of CN115380097A publication Critical patent/CN115380097A/zh
Application granted granted Critical
Publication of CN115380097B publication Critical patent/CN115380097B/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN202180026914.3A 2020-03-30 2021-03-17 研磨用组合物 Active CN115380097B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-060778 2020-03-30
JP2020060778 2020-03-30
PCT/JP2021/010795 WO2021200148A1 (ja) 2020-03-30 2021-03-17 研磨用組成物

Publications (2)

Publication Number Publication Date
CN115380097A CN115380097A (zh) 2022-11-22
CN115380097B true CN115380097B (zh) 2024-06-14

Family

ID=77929320

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180026914.3A Active CN115380097B (zh) 2020-03-30 2021-03-17 研磨用组合物

Country Status (7)

Country Link
US (2) US20230136485A1 (https=)
EP (1) EP4130190A4 (https=)
JP (1) JP7645241B2 (https=)
KR (1) KR20220156623A (https=)
CN (1) CN115380097B (https=)
TW (1) TWI890766B (https=)
WO (1) WO2021200148A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4410923A4 (en) * 2021-09-30 2025-10-01 Fujimi Inc POLISHING COMPOSITION
WO2023243905A1 (ko) * 2022-06-17 2023-12-21 주식회사 케이씨텍 실리콘 카바이드 웨이퍼용 연마 슬러리 조성물
WO2025205564A1 (ja) * 2024-03-28 2025-10-02 株式会社フジミインコーポレーテッド 研磨用組成物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015120269A1 (en) * 2014-02-05 2015-08-13 Cabot Microelectronics Corporation Cmp method for suppression of titanium nitride and titanium/titanium nitride removal
CN108655965A (zh) * 2017-03-28 2018-10-16 福吉米株式会社 研磨用组合物
WO2019138846A1 (ja) * 2018-01-11 2019-07-18 株式会社フジミインコーポレーテッド 研磨用組成物

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JP2007027663A (ja) * 2005-07-21 2007-02-01 Fujimi Inc 研磨用組成物
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
US9368367B2 (en) * 2009-04-13 2016-06-14 Sinmat, Inc. Chemical mechanical polishing of silicon carbide comprising surfaces
KR20140012135A (ko) 2011-04-26 2014-01-29 아사히 가라스 가부시키가이샤 비산화물 단결정 기판의 연마 방법
JP5838083B2 (ja) * 2011-12-09 2015-12-24 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
TWI582184B (zh) * 2012-01-16 2017-05-11 福吉米股份有限公司 研磨用組成物、其製造方法、稀釋用原液、矽基板之製造方法、及矽基板
EP2915859A4 (en) * 2012-10-31 2015-10-28 Fujimi Inc POLISHING COMPOSITION
JP6113619B2 (ja) * 2013-09-30 2017-04-12 株式会社フジミインコーポレーテッド 研磨用組成物
US20150114928A1 (en) * 2013-10-30 2015-04-30 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
JP6381068B2 (ja) * 2014-04-08 2018-08-29 山口精研工業株式会社 炭化ケイ素基板研磨用組成物
JP2015203081A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP2015229750A (ja) * 2014-06-06 2015-12-21 コニカミノルタ株式会社 Ｃｍｐ用研磨液
US9567492B2 (en) * 2014-08-28 2017-02-14 Sinmat, Inc. Polishing of hard substrates with soft-core composite particles
JP6730859B2 (ja) * 2015-07-15 2020-07-29 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
US10138396B2 (en) * 2015-09-30 2018-11-27 Fujimi Incorporated Polishing composition
CN108713242A (zh) * 2016-03-01 2018-10-26 福吉米株式会社 硅基板的研磨方法及研磨用组合物套组
WO2017212971A1 (ja) * 2016-06-08 2017-12-14 三井金属鉱業株式会社 研摩液及び研摩物の製造方法
EP3604475B1 (en) * 2017-03-23 2025-06-04 Fujimi Incorporated Polishing composition
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
JP2020060778A (ja) 2019-12-19 2020-04-16 株式会社ナビタイムジャパン 情報処理装置、情報処理システム、路線図情報生成プログラム、データ構造、および路線図情報生成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015120269A1 (en) * 2014-02-05 2015-08-13 Cabot Microelectronics Corporation Cmp method for suppression of titanium nitride and titanium/titanium nitride removal
CN108655965A (zh) * 2017-03-28 2018-10-16 福吉米株式会社 研磨用组合物
WO2019138846A1 (ja) * 2018-01-11 2019-07-18 株式会社フジミインコーポレーテッド 研磨用組成物

Also Published As

Publication number Publication date
JPWO2021200148A1 (https=) 2021-10-07
CN115380097A (zh) 2022-11-22
EP4130190A1 (en) 2023-02-08
WO2021200148A1 (ja) 2021-10-07
TWI890766B (zh) 2025-07-21
KR20220156623A (ko) 2022-11-25
JP7645241B2 (ja) 2025-03-13
EP4130190A4 (en) 2024-04-24
US20230136485A1 (en) 2023-05-04
US20260109881A1 (en) 2026-04-23
TW202138506A (zh) 2021-10-16

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