KR20220156623A - 연마용 조성물 - Google Patents

연마용 조성물 Download PDF

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Publication number
KR20220156623A
KR20220156623A KR1020227037168A KR20227037168A KR20220156623A KR 20220156623 A KR20220156623 A KR 20220156623A KR 1020227037168 A KR1020227037168 A KR 1020227037168A KR 20227037168 A KR20227037168 A KR 20227037168A KR 20220156623 A KR20220156623 A KR 20220156623A
Authority
KR
South Korea
Prior art keywords
polishing
particles
less
polishing composition
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227037168A
Other languages
English (en)
Korean (ko)
Inventor
신이치로 다카미
Original Assignee
가부시키가이샤 후지미인코퍼레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 후지미인코퍼레이티드 filed Critical 가부시키가이샤 후지미인코퍼레이티드
Publication of KR20220156623A publication Critical patent/KR20220156623A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H01L21/304—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020227037168A 2020-03-30 2021-03-17 연마용 조성물 Pending KR20220156623A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-060778 2020-03-30
JP2020060778 2020-03-30
PCT/JP2021/010795 WO2021200148A1 (ja) 2020-03-30 2021-03-17 研磨用組成物

Publications (1)

Publication Number Publication Date
KR20220156623A true KR20220156623A (ko) 2022-11-25

Family

ID=77929320

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227037168A Pending KR20220156623A (ko) 2020-03-30 2021-03-17 연마용 조성물

Country Status (7)

Country Link
US (2) US20230136485A1 (https=)
EP (1) EP4130190A4 (https=)
JP (1) JP7645241B2 (https=)
KR (1) KR20220156623A (https=)
CN (1) CN115380097B (https=)
TW (1) TWI890766B (https=)
WO (1) WO2021200148A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4410923A4 (en) * 2021-09-30 2025-10-01 Fujimi Inc POLISHING COMPOSITION
WO2023243905A1 (ko) * 2022-06-17 2023-12-21 주식회사 케이씨텍 실리콘 카바이드 웨이퍼용 연마 슬러리 조성물
WO2025205564A1 (ja) * 2024-03-28 2025-10-02 株式会社フジミインコーポレーテッド 研磨用組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011513991A (ja) 2008-03-05 2011-04-28 キャボット マイクロエレクトロニクス コーポレイション 水溶性酸化剤を用いた炭化ケイ素の研磨方法
WO2012147605A1 (ja) 2011-04-26 2012-11-01 旭硝子株式会社 非酸化物単結晶基板の研磨方法

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JP2007027663A (ja) * 2005-07-21 2007-02-01 Fujimi Inc 研磨用組成物
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
US9368367B2 (en) * 2009-04-13 2016-06-14 Sinmat, Inc. Chemical mechanical polishing of silicon carbide comprising surfaces
JP5838083B2 (ja) * 2011-12-09 2015-12-24 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
TWI582184B (zh) * 2012-01-16 2017-05-11 福吉米股份有限公司 研磨用組成物、其製造方法、稀釋用原液、矽基板之製造方法、及矽基板
EP2915859A4 (en) * 2012-10-31 2015-10-28 Fujimi Inc POLISHING COMPOSITION
JP6113619B2 (ja) * 2013-09-30 2017-04-12 株式会社フジミインコーポレーテッド 研磨用組成物
US20150114928A1 (en) * 2013-10-30 2015-04-30 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
KR102307254B1 (ko) * 2014-02-05 2021-09-30 씨엠씨 머티리얼즈, 인코포레이티드 질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법
JP6381068B2 (ja) * 2014-04-08 2018-08-29 山口精研工業株式会社 炭化ケイ素基板研磨用組成物
JP2015203081A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP2015229750A (ja) * 2014-06-06 2015-12-21 コニカミノルタ株式会社 Ｃｍｐ用研磨液
US9567492B2 (en) * 2014-08-28 2017-02-14 Sinmat, Inc. Polishing of hard substrates with soft-core composite particles
JP6730859B2 (ja) * 2015-07-15 2020-07-29 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
US10138396B2 (en) * 2015-09-30 2018-11-27 Fujimi Incorporated Polishing composition
CN108713242A (zh) * 2016-03-01 2018-10-26 福吉米株式会社 硅基板的研磨方法及研磨用组合物套组
WO2017212971A1 (ja) * 2016-06-08 2017-12-14 三井金属鉱業株式会社 研摩液及び研摩物の製造方法
EP3604475B1 (en) * 2017-03-23 2025-06-04 Fujimi Incorporated Polishing composition
JP6825957B2 (ja) * 2017-03-28 2021-02-03 株式会社フジミインコーポレーテッド 研磨用組成物
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
US11339311B2 (en) * 2018-01-11 2022-05-24 Fujimi Incorporated Polishing composition
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
JP2020060778A (ja) 2019-12-19 2020-04-16 株式会社ナビタイムジャパン 情報処理装置、情報処理システム、路線図情報生成プログラム、データ構造、および路線図情報生成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011513991A (ja) 2008-03-05 2011-04-28 キャボット マイクロエレクトロニクス コーポレイション 水溶性酸化剤を用いた炭化ケイ素の研磨方法
WO2012147605A1 (ja) 2011-04-26 2012-11-01 旭硝子株式会社 非酸化物単結晶基板の研磨方法

Also Published As

Publication number Publication date
JPWO2021200148A1 (https=) 2021-10-07
CN115380097A (zh) 2022-11-22
EP4130190A1 (en) 2023-02-08
WO2021200148A1 (ja) 2021-10-07
CN115380097B (zh) 2024-06-14
TWI890766B (zh) 2025-07-21
JP7645241B2 (ja) 2025-03-13
EP4130190A4 (en) 2024-04-24
US20230136485A1 (en) 2023-05-04
US20260109881A1 (en) 2026-04-23
TW202138506A (zh) 2021-10-16

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