JP7620719B2 - 半導体膜及び複合基板 - Google Patents

半導体膜及び複合基板 Download PDF

Info

Publication number
JP7620719B2
JP7620719B2 JP2023543703A JP2023543703A JP7620719B2 JP 7620719 B2 JP7620719 B2 JP 7620719B2 JP 2023543703 A JP2023543703 A JP 2023543703A JP 2023543703 A JP2023543703 A JP 2023543703A JP 7620719 B2 JP7620719 B2 JP 7620719B2
Authority
JP
Japan
Prior art keywords
semiconductor film
film
less
peak
outer periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023543703A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023026633A1 (https=
Inventor
宏之 柴田
潤 吉川
守道 渡邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2023026633A1 publication Critical patent/JPWO2023026633A1/ja
Application granted granted Critical
Publication of JP7620719B2 publication Critical patent/JP7620719B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023543703A 2021-08-27 2022-06-09 半導体膜及び複合基板 Active JP7620719B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021139270 2021-08-27
JP2021139270 2021-08-27
PCT/JP2022/023323 WO2023026633A1 (ja) 2021-08-27 2022-06-09 半導体膜及び複合基板

Publications (2)

Publication Number Publication Date
JPWO2023026633A1 JPWO2023026633A1 (https=) 2023-03-02
JP7620719B2 true JP7620719B2 (ja) 2025-01-23

Family

ID=85321722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023543703A Active JP7620719B2 (ja) 2021-08-27 2022-06-09 半導体膜及び複合基板

Country Status (2)

Country Link
JP (1) JP7620719B2 (https=)
WO (1) WO2023026633A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017007871A (ja) 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP2019009405A (ja) 2017-06-28 2019-01-17 株式会社Flosfia 積層構造体および半導体装置
JP2019012826A (ja) 2017-06-30 2019-01-24 国立研究開発法人物質・材料研究機構 ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法
JP2019142756A (ja) 2018-02-22 2019-08-29 トヨタ自動車株式会社 成膜方法
JP2020011859A (ja) 2018-07-17 2020-01-23 トヨタ自動車株式会社 成膜方法、及び、半導体装置の製造方法
WO2021048950A1 (ja) 2019-09-11 2021-03-18 日本碍子株式会社 半導体膜
CN113066902A (zh) 2021-03-25 2021-07-02 北京邮电大学 一种通过氧空位浓度调控ε相氧化镓光电响应性能的方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017007871A (ja) 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP2019009405A (ja) 2017-06-28 2019-01-17 株式会社Flosfia 積層構造体および半導体装置
JP2019012826A (ja) 2017-06-30 2019-01-24 国立研究開発法人物質・材料研究機構 ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法
JP2019142756A (ja) 2018-02-22 2019-08-29 トヨタ自動車株式会社 成膜方法
JP2020011859A (ja) 2018-07-17 2020-01-23 トヨタ自動車株式会社 成膜方法、及び、半導体装置の製造方法
WO2021048950A1 (ja) 2019-09-11 2021-03-18 日本碍子株式会社 半導体膜
CN113066902A (zh) 2021-03-25 2021-07-02 北京邮电大学 一种通过氧空位浓度调控ε相氧化镓光电响应性能的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
森本 尚太 他，ミストCVD法による塩化物原料を用いたGaNテンプレート上へのε-Ga2O3薄膜成長，第78回応用物理学会秋季学術講演会 講演予稿集，日本，応用物理学会，2017年，P. 16-045

Also Published As

Publication number Publication date
WO2023026633A1 (ja) 2023-03-02
JPWO2023026633A1 (https=) 2023-03-02

Similar Documents

Publication Publication Date Title
US12195844B2 (en) Method of manufacturing oxide crystal thin film
CN113832544B (zh) β-Ga2O3系单晶膜的生长方法和晶体层叠结构体
US12159907B2 (en) Semiconductor film
JP2005529484A (ja) ガリウムリッチな窒化ガリウム膜の製造プロセス
JP2015070248A (ja) 酸化物薄膜及びその製造方法
TW201203606A (en) GaN substrate and light-emitting device
CN113454272B (zh) GaN结晶和基板
US12351906B2 (en) Semiconductor film
JP2018052797A (ja) ＧａＮ結晶の製造方法
CN100555687C (zh) 半导体发光元件及其制造方法
JP7620719B2 (ja) 半導体膜及び複合基板
CN101506947B (zh) 用来制造掺杂的ⅲ-n大块晶体以及自支撑的、掺杂的ⅲ-n衬底的方法以及掺杂的ⅲ-n大块晶体和自支撑的、掺杂的ⅲ-n衬底
US12406845B2 (en) α-Ga2O3 semiconductor film
WO2020195355A1 (ja) 下地基板
JP7591154B2 (ja) 半導体膜及び複合基板
JP7221410B2 (ja) α－Ｇａ２Ｏ３系半導体膜
JP7612029B2 (ja) 積層体
JPWO2001073160A1 (ja) 酸化亜鉛半導体材料の製造方法
JP2023085571A (ja) 半導体膜
WO2020261356A1 (ja) 半導体膜
JP2021100077A (ja) 成膜方法
CN119923494A (zh) GaN晶体及GaN晶体的制造方法
Motamedi Deposition and Characterization of AlN and GaN Thin Films by Plasma-Enhanced Atomic Layer Deposition
JPH01318268A (ja) 半導体発光素子の製造方法
HK1024097A (en) Gallium nitride single grystal substrate and method of producing same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230907

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240819

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240920

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241218

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250110

R150 Certificate of patent or registration of utility model

Ref document number: 7620719

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150