JPWO2023026633A1 - - Google Patents

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Publication number
JPWO2023026633A1
JPWO2023026633A1 JP2023543703A JP2023543703A JPWO2023026633A1 JP WO2023026633 A1 JPWO2023026633 A1 JP WO2023026633A1 JP 2023543703 A JP2023543703 A JP 2023543703A JP 2023543703 A JP2023543703 A JP 2023543703A JP WO2023026633 A1 JPWO2023026633 A1 JP WO2023026633A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2023543703A
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Japanese (ja)
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JP7620719B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of JPWO2023026633A1 publication Critical patent/JPWO2023026633A1/ja
Application granted granted Critical
Publication of JP7620719B2 publication Critical patent/JP7620719B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023543703A 2021-08-27 2022-06-09 半導体膜及び複合基板 Active JP7620719B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021139270 2021-08-27
JP2021139270 2021-08-27
PCT/JP2022/023323 WO2023026633A1 (ja) 2021-08-27 2022-06-09 半導体膜及び複合基板

Publications (2)

Publication Number Publication Date
JPWO2023026633A1 true JPWO2023026633A1 (https=) 2023-03-02
JP7620719B2 JP7620719B2 (ja) 2025-01-23

Family

ID=85321722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023543703A Active JP7620719B2 (ja) 2021-08-27 2022-06-09 半導体膜及び複合基板

Country Status (2)

Country Link
JP (1) JP7620719B2 (https=)
WO (1) WO2023026633A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017007871A (ja) * 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP2019009405A (ja) * 2017-06-28 2019-01-17 株式会社Flosfia 積層構造体および半導体装置
JP2019012826A (ja) * 2017-06-30 2019-01-24 国立研究開発法人物質・材料研究機構 ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法
JP2019142756A (ja) * 2018-02-22 2019-08-29 トヨタ自動車株式会社 成膜方法
JP2020011859A (ja) * 2018-07-17 2020-01-23 トヨタ自動車株式会社 成膜方法、及び、半導体装置の製造方法
WO2021048950A1 (ja) * 2019-09-11 2021-03-18 日本碍子株式会社 半導体膜
CN113066902A (zh) * 2021-03-25 2021-07-02 北京邮电大学 一种通过氧空位浓度调控ε相氧化镓光电响应性能的方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017007871A (ja) * 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP2019009405A (ja) * 2017-06-28 2019-01-17 株式会社Flosfia 積層構造体および半導体装置
JP2019012826A (ja) * 2017-06-30 2019-01-24 国立研究開発法人物質・材料研究機構 ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法
JP2019142756A (ja) * 2018-02-22 2019-08-29 トヨタ自動車株式会社 成膜方法
JP2020011859A (ja) * 2018-07-17 2020-01-23 トヨタ自動車株式会社 成膜方法、及び、半導体装置の製造方法
WO2021048950A1 (ja) * 2019-09-11 2021-03-18 日本碍子株式会社 半導体膜
CN113066902A (zh) * 2021-03-25 2021-07-02 北京邮电大学 一种通过氧空位浓度调控ε相氧化镓光电响应性能的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
森本 尚太 他: "ミストCVD法による塩化物原料を用いたGaNテンプレート上へのε-Ga2O3薄膜成長", 第78回応用物理学会秋季学術講演会 講演予稿集, JPN7022003354, 2017, JP, pages 16 - 045, ISSN: 0005394004 *

Also Published As

Publication number Publication date
WO2023026633A1 (ja) 2023-03-02
JP7620719B2 (ja) 2025-01-23

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