JPWO2023021815A1 - - Google Patents

Info

Publication number
JPWO2023021815A1
JPWO2023021815A1 JP2023542234A JP2023542234A JPWO2023021815A1 JP WO2023021815 A1 JPWO2023021815 A1 JP WO2023021815A1 JP 2023542234 A JP2023542234 A JP 2023542234A JP 2023542234 A JP2023542234 A JP 2023542234A JP WO2023021815 A1 JPWO2023021815 A1 JP WO2023021815A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023542234A
Other languages
Japanese (ja)
Other versions
JP7591154B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023021815A1 publication Critical patent/JPWO2023021815A1/ja
Application granted granted Critical
Publication of JP7591154B2 publication Critical patent/JP7591154B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023542234A 2021-08-20 2022-06-09 半導体膜及び複合基板 Active JP7591154B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021134685 2021-08-20
JP2021134685 2021-08-20
PCT/JP2022/023322 WO2023021815A1 (ja) 2021-08-20 2022-06-09 半導体膜及び複合基板

Publications (2)

Publication Number Publication Date
JPWO2023021815A1 true JPWO2023021815A1 (https=) 2023-02-23
JP7591154B2 JP7591154B2 (ja) 2024-11-27

Family

ID=85240443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023542234A Active JP7591154B2 (ja) 2021-08-20 2022-06-09 半導体膜及び複合基板

Country Status (2)

Country Link
JP (1) JP7591154B2 (https=)
WO (1) WO2023021815A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016037417A (ja) * 2014-08-07 2016-03-22 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板
JP2017007871A (ja) * 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP2019067907A (ja) * 2017-09-29 2019-04-25 株式会社Flosfia 積層構造体および半導体装置
CN110085658A (zh) * 2019-04-24 2019-08-02 中山大学 氧化镓半导体及其制备方法
CN110085661A (zh) * 2019-04-23 2019-08-02 中山大学 一种氧化镓半导体叠层结构及其制备方法
CN111640857A (zh) * 2020-07-20 2020-09-08 中山大学 氧化镓在压电材料上的应用及压电薄膜、压电器件
WO2021044489A1 (ja) * 2019-09-02 2021-03-11 日本碍子株式会社 半導体膜
CN113066902A (zh) * 2021-03-25 2021-07-02 北京邮电大学 一种通过氧空位浓度调控ε相氧化镓光电响应性能的方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016037417A (ja) * 2014-08-07 2016-03-22 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板
JP2017007871A (ja) * 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP2019067907A (ja) * 2017-09-29 2019-04-25 株式会社Flosfia 積層構造体および半導体装置
CN110085661A (zh) * 2019-04-23 2019-08-02 中山大学 一种氧化镓半导体叠层结构及其制备方法
CN110085658A (zh) * 2019-04-24 2019-08-02 中山大学 氧化镓半导体及其制备方法
WO2021044489A1 (ja) * 2019-09-02 2021-03-11 日本碍子株式会社 半導体膜
CN111640857A (zh) * 2020-07-20 2020-09-08 中山大学 氧化镓在压电材料上的应用及压电薄膜、压电器件
CN113066902A (zh) * 2021-03-25 2021-07-02 北京邮电大学 一种通过氧空位浓度调控ε相氧化镓光电响应性能的方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LEONE,STEFANO ET AL.: "Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transi", JOURNAL OF CRYSTAL GROWTH, vol. 534, JPN6022031706, 2020, pages 125511, ISSN: 0005454570 *
OSHIMA,YUICHI ET AL.: "Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy", JOURNAL OF APPLIED PHYSICS, vol. 118, JPN6022031705, 2015, pages 085301 - 1, ISSN: 0005454571 *

Also Published As

Publication number Publication date
JP7591154B2 (ja) 2024-11-27
WO2023021815A1 (ja) 2023-02-23

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
JPWO2023026633A1 (https=)
BR112023016292A2 (https=)
BR112023011539A2 (https=)
BR112023011610A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)
BR102021016375A2 (https=)
BR102021016200A2 (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230907

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20241115

R150 Certificate of patent or registration of utility model

Ref document number: 7591154

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150