JP7591154B2 - 半導体膜及び複合基板 - Google Patents

半導体膜及び複合基板 Download PDF

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Publication number
JP7591154B2
JP7591154B2 JP2023542234A JP2023542234A JP7591154B2 JP 7591154 B2 JP7591154 B2 JP 7591154B2 JP 2023542234 A JP2023542234 A JP 2023542234A JP 2023542234 A JP2023542234 A JP 2023542234A JP 7591154 B2 JP7591154 B2 JP 7591154B2
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Japan
Prior art keywords
semiconductor film
film
substrate
angle
outer periphery
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Japanese (ja)
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JPWO2023021815A1 (https=
Inventor
潤 吉川
守道 渡邊
宏之 柴田
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023542234A 2021-08-20 2022-06-09 半導体膜及び複合基板 Active JP7591154B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021134685 2021-08-20
JP2021134685 2021-08-20
PCT/JP2022/023322 WO2023021815A1 (ja) 2021-08-20 2022-06-09 半導体膜及び複合基板

Publications (2)

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JPWO2023021815A1 JPWO2023021815A1 (https=) 2023-02-23
JP7591154B2 true JP7591154B2 (ja) 2024-11-27

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JP (1) JP7591154B2 (https=)
WO (1) WO2023021815A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016037417A (ja) 2014-08-07 2016-03-22 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板
JP2017007871A (ja) 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP2019067907A (ja) 2017-09-29 2019-04-25 株式会社Flosfia 積層構造体および半導体装置
CN110085658A (zh) 2019-04-24 2019-08-02 中山大学 氧化镓半导体及其制备方法
CN110085661A (zh) 2019-04-23 2019-08-02 中山大学 一种氧化镓半导体叠层结构及其制备方法
CN111640857A (zh) 2020-07-20 2020-09-08 中山大学 氧化镓在压电材料上的应用及压电薄膜、压电器件
WO2021044489A1 (ja) 2019-09-02 2021-03-11 日本碍子株式会社 半導体膜
CN113066902A (zh) 2021-03-25 2021-07-02 北京邮电大学 一种通过氧空位浓度调控ε相氧化镓光电响应性能的方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016037417A (ja) 2014-08-07 2016-03-22 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板
JP2017007871A (ja) 2015-06-16 2017-01-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP2019067907A (ja) 2017-09-29 2019-04-25 株式会社Flosfia 積層構造体および半導体装置
CN110085661A (zh) 2019-04-23 2019-08-02 中山大学 一种氧化镓半导体叠层结构及其制备方法
CN110085658A (zh) 2019-04-24 2019-08-02 中山大学 氧化镓半导体及其制备方法
WO2021044489A1 (ja) 2019-09-02 2021-03-11 日本碍子株式会社 半導体膜
CN111640857A (zh) 2020-07-20 2020-09-08 中山大学 氧化镓在压电材料上的应用及压电薄膜、压电器件
CN113066902A (zh) 2021-03-25 2021-07-02 北京邮电大学 一种通过氧空位浓度调控ε相氧化镓光电响应性能的方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LEONE,Stefano et al.，Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transi，Journal of Crystal Growth，2020年，Vol.534，pp.125511，<DOI: 10.1016/j.jcrysgro.2020.125511>
OSHIMA,Yuichi et al.，Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy，JOURNAL OF APPLIED PHYSICS，2015年，Vol.118，pp.085301-1 - 085301-5，<DOI: 10.1063/1.4929417>

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WO2023021815A1 (ja) 2023-02-23

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