JP7571120B2 - 基板処理方法及び基板処理装置 - Google Patents

基板処理方法及び基板処理装置 Download PDF

Info

Publication number
JP7571120B2
JP7571120B2 JP2022509457A JP2022509457A JP7571120B2 JP 7571120 B2 JP7571120 B2 JP 7571120B2 JP 2022509457 A JP2022509457 A JP 2022509457A JP 2022509457 A JP2022509457 A JP 2022509457A JP 7571120 B2 JP7571120 B2 JP 7571120B2
Authority
JP
Japan
Prior art keywords
layer
peeling
substrate
laser
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022509457A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021192853A1 (https=
JPWO2021192853A5 (https=
Inventor
隼斗 田之上
陽平 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2021192853A1 publication Critical patent/JPWO2021192853A1/ja
Publication of JPWO2021192853A5 publication Critical patent/JPWO2021192853A5/ja
Priority to JP2024176903A priority Critical patent/JP7809180B2/ja
Application granted granted Critical
Publication of JP7571120B2 publication Critical patent/JP7571120B2/ja
Priority to JP2026007305A priority patent/JP2026065177A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
JP2022509457A 2020-03-24 2021-03-02 基板処理方法及び基板処理装置 Active JP7571120B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024176903A JP7809180B2 (ja) 2020-03-24 2024-10-09 基板処理方法、基板処理装置、プログラム及びコンピュータ記憶媒体
JP2026007305A JP2026065177A (ja) 2020-03-24 2026-01-20 基板処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020053201 2020-03-24
JP2020053201 2020-03-24
PCT/JP2021/007939 WO2021192853A1 (ja) 2020-03-24 2021-03-02 基板処理方法及び基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024176903A Division JP7809180B2 (ja) 2020-03-24 2024-10-09 基板処理方法、基板処理装置、プログラム及びコンピュータ記憶媒体

Publications (3)

Publication Number Publication Date
JPWO2021192853A1 JPWO2021192853A1 (https=) 2021-09-30
JPWO2021192853A5 JPWO2021192853A5 (https=) 2022-12-08
JP7571120B2 true JP7571120B2 (ja) 2024-10-22

Family

ID=77890157

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2022509457A Active JP7571120B2 (ja) 2020-03-24 2021-03-02 基板処理方法及び基板処理装置
JP2024176903A Active JP7809180B2 (ja) 2020-03-24 2024-10-09 基板処理方法、基板処理装置、プログラム及びコンピュータ記憶媒体
JP2026007305A Pending JP2026065177A (ja) 2020-03-24 2026-01-20 基板処理装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024176903A Active JP7809180B2 (ja) 2020-03-24 2024-10-09 基板処理方法、基板処理装置、プログラム及びコンピュータ記憶媒体
JP2026007305A Pending JP2026065177A (ja) 2020-03-24 2026-01-20 基板処理装置

Country Status (6)

Country Link
US (2) US12512336B2 (https=)
JP (3) JP7571120B2 (https=)
KR (1) KR20220158023A (https=)
CN (1) CN115335979B (https=)
TW (1) TWI878475B (https=)
WO (1) WO2021192853A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7797188B2 (ja) * 2021-12-14 2026-01-13 キオクシア株式会社 半導体装置、及び半導体装置の製造方法
CN114473188A (zh) * 2022-03-28 2022-05-13 杭州乾晶半导体有限公司 一种用于剥离晶片的激光加工方法、装置
WO2024024191A1 (ja) * 2022-07-27 2024-02-01 東京エレクトロン株式会社 基板処理システム、基板処理方法及びデバイス構造
US20260042171A1 (en) * 2022-08-09 2026-02-12 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP2024042807A (ja) * 2022-09-16 2024-03-29 キオクシア株式会社 レーザー加工装置、レーザー剥離方法および半導体装置の製造方法
CN115223851B (zh) * 2022-09-21 2022-12-09 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种机械式晶片分离方法及装置
WO2025046843A1 (ja) * 2023-08-31 2025-03-06 東京エレクトロン株式会社 半導体装置の製造方法
CN118809146A (zh) * 2024-08-01 2024-10-22 江苏和熠光显科技有限公司 激光拆解oled盖板的方法、装置、设备及存储介质

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177182A (ja) 2007-01-16 2008-07-31 Seiko Epson Corp 薄膜デバイスの製造方法
JP2018117060A (ja) 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
WO2019208298A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2020017599A1 (ja) 2018-07-19 2020-01-23 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP4525603B2 (ja) * 1996-08-27 2010-08-18 セイコーエプソン株式会社 薄膜トランジスタの転写方法
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP4061846B2 (ja) 2001-01-23 2008-03-19 セイコーエプソン株式会社 積層体の製造方法及び半導体装置の製造方法
TW558743B (en) * 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
JP2004327836A (ja) 2003-04-25 2004-11-18 Seiko Epson Corp 被転写体の転写方法、被転写体の製造方法、回路基板の製造方法、電気光学装置、及び電子機器
JP2007220749A (ja) 2006-02-14 2007-08-30 Seiko Epson Corp 半導体装置の製造方法
KR101120140B1 (ko) * 2010-05-10 2012-03-22 경희대학교 산학협력단 레이저 리프트 오프 공정을 이용한 플렉서블 염료감응 태양전지 제조 방법
CN103779185A (zh) * 2014-01-29 2014-05-07 中国科学院半导体研究所 一种生长GaN厚膜的自剥离方法
JP6440558B2 (ja) * 2015-04-10 2018-12-19 株式会社ディスコ 被加工物の加工方法
JP2018169556A (ja) * 2017-03-30 2018-11-01 大日本印刷株式会社 表示装置形成用基板、表示装置および表示装置の製造方法
CN108538784B (zh) * 2018-06-19 2023-12-01 南通中铁华宇电气有限公司 一种图形化外延结构激光剥离装置
CN110098225B (zh) * 2019-04-18 2021-06-01 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177182A (ja) 2007-01-16 2008-07-31 Seiko Epson Corp 薄膜デバイスの製造方法
JP2018117060A (ja) 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
WO2019208298A1 (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2020017599A1 (ja) 2018-07-19 2020-01-23 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Also Published As

Publication number Publication date
JP2024177522A (ja) 2024-12-19
CN115335979A (zh) 2022-11-11
TW202522576A (zh) 2025-06-01
JPWO2021192853A1 (https=) 2021-09-30
CN115335979B (zh) 2026-03-27
US20260082846A1 (en) 2026-03-19
KR20220158023A (ko) 2022-11-29
US12512336B2 (en) 2025-12-30
JP2026065177A (ja) 2026-04-14
US20230108557A1 (en) 2023-04-06
TWI878475B (zh) 2025-04-01
JP7809180B2 (ja) 2026-01-30
TW202141589A (zh) 2021-11-01
WO2021192853A1 (ja) 2021-09-30

Similar Documents

Publication Publication Date Title
JP7571120B2 (ja) 基板処理方法及び基板処理装置
JP7499845B2 (ja) 基板処理方法及び基板処理装置
JP7641435B2 (ja) 基板処理方法、基板処理装置及び基板処理システム
JP7386077B2 (ja) 基板処理装置及び基板処理方法
TWI896595B (zh) 基板處理方法及基板處理裝置
JP7607678B2 (ja) 基板処理装置、基板処理方法及び基板製造方法
JP7577137B2 (ja) 基板処理装置及び基板処理方法
JP7577138B2 (ja) 基板処理装置及び基板処理方法
JP7308292B2 (ja) 基板処理装置及び基板処理方法
JP7499599B2 (ja) 基板処理システム及び基板処理方法
JP2021012950A (ja) 支持体剥離方法及び支持体剥離システム
TWI913238B (zh) 基板處理裝置及基板處理方法
JP7815447B2 (ja) 基板処理システム、基板処理方法及びデバイス構造
WO2024247740A1 (ja) 基板処理方法及び基板処理システム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220912

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220912

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231128

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240507

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240627

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240910

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20241009

R150 Certificate of patent or registration of utility model

Ref document number: 7571120

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150