TWI878475B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

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Publication number
TWI878475B
TWI878475B TW110107482A TW110107482A TWI878475B TW I878475 B TWI878475 B TW I878475B TW 110107482 A TW110107482 A TW 110107482A TW 110107482 A TW110107482 A TW 110107482A TW I878475 B TWI878475 B TW I878475B
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TW
Taiwan
Prior art keywords
substrate
layer
wafer
peeling
laser
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Application number
TW110107482A
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English (en)
Chinese (zh)
Other versions
TW202141589A (zh
Inventor
田之上隼斗
山下陽平
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202141589A publication Critical patent/TW202141589A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
TW110107482A 2020-03-24 2021-03-03 基板處理方法及基板處理裝置 TWI878475B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020053201 2020-03-24
JP2020-053201 2020-03-24

Publications (2)

Publication Number Publication Date
TW202141589A TW202141589A (zh) 2021-11-01
TWI878475B true TWI878475B (zh) 2025-04-01

Family

ID=77890157

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110107482A TWI878475B (zh) 2020-03-24 2021-03-03 基板處理方法及基板處理裝置

Country Status (6)

Country Link
US (2) US12512336B2 (https=)
JP (3) JP7571120B2 (https=)
KR (1) KR20220158023A (https=)
CN (1) CN115335979B (https=)
TW (1) TWI878475B (https=)
WO (1) WO2021192853A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7797188B2 (ja) * 2021-12-14 2026-01-13 キオクシア株式会社 半導体装置、及び半導体装置の製造方法
CN114473188A (zh) * 2022-03-28 2022-05-13 杭州乾晶半导体有限公司 一种用于剥离晶片的激光加工方法、装置
JP7815447B2 (ja) * 2022-07-27 2026-02-17 東京エレクトロン株式会社 基板処理システム、基板処理方法及びデバイス構造
CN119631159A (zh) * 2022-08-09 2025-03-14 东京毅力科创株式会社 基板处理装置和基板处理方法
JP2024042807A (ja) * 2022-09-16 2024-03-29 キオクシア株式会社 レーザー加工装置、レーザー剥離方法および半導体装置の製造方法
CN115223851B (zh) * 2022-09-21 2022-12-09 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种机械式晶片分离方法及装置
CN121753535A (zh) * 2023-08-31 2026-03-27 东京毅力科创株式会社 半导体装置的制造方法
CN118809146A (zh) * 2024-08-01 2024-10-22 江苏和熠光显科技有限公司 激光拆解oled盖板的方法、装置、设备及存储介质

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JP2008177182A (ja) * 2007-01-16 2008-07-31 Seiko Epson Corp 薄膜デバイスの製造方法
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
WO2019208298A1 (ja) * 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4525603B2 (ja) * 1996-08-27 2010-08-18 セイコーエプソン株式会社 薄膜トランジスタの転写方法
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP4061846B2 (ja) 2001-01-23 2008-03-19 セイコーエプソン株式会社 積層体の製造方法及び半導体装置の製造方法
TW558743B (en) * 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
JP2004327836A (ja) * 2003-04-25 2004-11-18 Seiko Epson Corp 被転写体の転写方法、被転写体の製造方法、回路基板の製造方法、電気光学装置、及び電子機器
JP2007220749A (ja) 2006-02-14 2007-08-30 Seiko Epson Corp 半導体装置の製造方法
KR101120140B1 (ko) * 2010-05-10 2012-03-22 경희대학교 산학협력단 레이저 리프트 오프 공정을 이용한 플렉서블 염료감응 태양전지 제조 방법
CN103779185A (zh) * 2014-01-29 2014-05-07 中国科学院半导体研究所 一种生长GaN厚膜的自剥离方法
JP6440558B2 (ja) * 2015-04-10 2018-12-19 株式会社ディスコ 被加工物の加工方法
JP2018169556A (ja) * 2017-03-30 2018-11-01 大日本印刷株式会社 表示装置形成用基板、表示装置および表示装置の製造方法
CN108538784B (zh) * 2018-06-19 2023-12-01 南通中铁华宇电气有限公司 一种图形化外延结构激光剥离装置
CN118983257A (zh) 2018-07-19 2024-11-19 东京毅力科创株式会社 基板处理装置和基板处理方法
CN110098225B (zh) * 2019-04-18 2021-06-01 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JP2008177182A (ja) * 2007-01-16 2008-07-31 Seiko Epson Corp 薄膜デバイスの製造方法
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法
WO2019208298A1 (ja) * 2018-04-27 2019-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Also Published As

Publication number Publication date
JPWO2021192853A1 (https=) 2021-09-30
KR20220158023A (ko) 2022-11-29
JP7809180B2 (ja) 2026-01-30
JP2026065177A (ja) 2026-04-14
US20230108557A1 (en) 2023-04-06
TW202141589A (zh) 2021-11-01
CN115335979B (zh) 2026-03-27
WO2021192853A1 (ja) 2021-09-30
CN115335979A (zh) 2022-11-11
JP7571120B2 (ja) 2024-10-22
US12512336B2 (en) 2025-12-30
US20260082846A1 (en) 2026-03-19
TW202522576A (zh) 2025-06-01
JP2024177522A (ja) 2024-12-19

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