JP7558822B2 - 光電変換装置、光電変換システム、および移動体 - Google Patents

光電変換装置、光電変換システム、および移動体 Download PDF

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Publication number
JP7558822B2
JP7558822B2 JP2021008443A JP2021008443A JP7558822B2 JP 7558822 B2 JP7558822 B2 JP 7558822B2 JP 2021008443 A JP2021008443 A JP 2021008443A JP 2021008443 A JP2021008443 A JP 2021008443A JP 7558822 B2 JP7558822 B2 JP 7558822B2
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photoelectric conversion
region
conversion device
semiconductor element
light
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JP2021008443A
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Japanese (ja)
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JP2022073873A (ja
Inventor
裕介 大貫
旬史 岩田
靖司 松野
一 池田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2021008443A priority Critical patent/JP7558822B2/ja
Priority to EP24151988.3A priority patent/EP4345904B1/en
Priority to EP21198089.1A priority patent/EP3993041A1/en
Priority to US17/511,382 priority patent/US12176368B2/en
Priority to CN202111265262.7A priority patent/CN114429961A/zh
Publication of JP2022073873A publication Critical patent/JP2022073873A/ja
Priority to JP2023144270A priority patent/JP7815185B2/ja
Application granted granted Critical
Publication of JP7558822B2 publication Critical patent/JP7558822B2/ja
Priority to US18/947,777 priority patent/US20250072144A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
    • B60R11/00—Arrangements for holding or mounting articles, not otherwise provided for
    • B60R11/04—Mounting of cameras operative during drive; Arrangement of controls thereof relative to the vehicle

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2021008443A 2020-10-29 2021-01-22 光電変換装置、光電変換システム、および移動体 Active JP7558822B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2021008443A JP7558822B2 (ja) 2020-10-29 2021-01-22 光電変換装置、光電変換システム、および移動体
EP24151988.3A EP4345904B1 (en) 2020-10-29 2021-09-21 Photoelectric conversion apparatus, photoelectric conversion system, and moving body
EP21198089.1A EP3993041A1 (en) 2020-10-29 2021-09-21 Photoelectric conversion apparatus, photoelectric conversion system, and moving body
US17/511,382 US12176368B2 (en) 2020-10-29 2021-10-26 Photoelectric conversion apparatus, photoelectric conversion system, and moving body
CN202111265262.7A CN114429961A (zh) 2020-10-29 2021-10-28 光电转换设备、光电转换系统和移动体
JP2023144270A JP7815185B2 (ja) 2020-10-29 2023-09-06 光電変換装置、光電変換システム、および移動体
US18/947,777 US20250072144A1 (en) 2020-10-29 2024-11-14 Photoelectric conversion apparatus, photoelectric conversion system, and moving body

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020181379 2020-10-29
JP2020181379 2020-10-29
JP2021008443A JP7558822B2 (ja) 2020-10-29 2021-01-22 光電変換装置、光電変換システム、および移動体

Related Child Applications (1)

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JP2022073873A JP2022073873A (ja) 2022-05-17
JP7558822B2 true JP7558822B2 (ja) 2024-10-01

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JP2023144270A Active JP7815185B2 (ja) 2020-10-29 2023-09-06 光電変換装置、光電変換システム、および移動体

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US (2) US12176368B2 (https=)
EP (2) EP4345904B1 (https=)
JP (2) JP7558822B2 (https=)
CN (1) CN114429961A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7558822B2 (ja) 2020-10-29 2024-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
WO2023132001A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7743479B2 (ja) * 2023-09-15 2025-09-24 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Citations (2)

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JP2020145397A (ja) 2018-10-17 2020-09-10 キヤノン株式会社 光電変換装置、および、それを含む機器

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JP2001127276A (ja) * 1999-10-26 2001-05-11 Sony Corp 半導体装置及び固体撮像素子
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US7920185B2 (en) 2004-06-30 2011-04-05 Micron Technology, Inc. Shielding black reference pixels in image sensors
US7830412B2 (en) * 2005-08-22 2010-11-09 Aptina Imaging Corporation Method and apparatus for shielding correction pixels from spurious charges in an imager
JP2007335751A (ja) * 2006-06-16 2007-12-27 Toshiba Corp 固体撮像装置
JP5407761B2 (ja) * 2009-10-30 2014-02-05 ソニー株式会社 固体撮像装置、電子機器
JP2011151461A (ja) 2010-01-19 2011-08-04 Hoya Corp 固体撮像素子
JP2012114197A (ja) * 2010-11-24 2012-06-14 Panasonic Corp 固体撮像装置及びその製造方法
US9165970B2 (en) * 2011-02-16 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Back side illuminated image sensor having isolated bonding pads
JP2013162336A (ja) 2012-02-06 2013-08-19 Sony Corp 撮像装置及び電子機器
JP5696081B2 (ja) * 2012-03-23 2015-04-08 株式会社東芝 固体撮像装置
WO2017043068A1 (ja) * 2015-09-09 2017-03-16 パナソニックＩｐマネジメント株式会社 固体撮像素子
JP6846648B2 (ja) * 2017-03-21 2021-03-24 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
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KR102558828B1 (ko) * 2018-10-10 2023-07-24 삼성전자주식회사 차광 패턴을 포함하는 이미지 센서
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JP7558822B2 (ja) 2020-10-29 2024-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

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JP2000196055A (ja) 1998-12-24 2000-07-14 Toshiba Corp 固体撮像装置
JP2020145397A (ja) 2018-10-17 2020-09-10 キヤノン株式会社 光電変換装置、および、それを含む機器

Also Published As

Publication number Publication date
EP4345904B1 (en) 2025-11-12
US20220139985A1 (en) 2022-05-05
JP7815185B2 (ja) 2026-02-17
US12176368B2 (en) 2024-12-24
EP3993041A1 (en) 2022-05-04
EP4345904A3 (en) 2024-06-05
JP2022073873A (ja) 2022-05-17
JP2023158108A (ja) 2023-10-26
CN114429961A (zh) 2022-05-03
US20250072144A1 (en) 2025-02-27
EP4345904A2 (en) 2024-04-03

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