CN114429961A - 光电转换设备、光电转换系统和移动体 - Google Patents

光电转换设备、光电转换系统和移动体 Download PDF

Info

Publication number
CN114429961A
CN114429961A CN202111265262.7A CN202111265262A CN114429961A CN 114429961 A CN114429961 A CN 114429961A CN 202111265262 A CN202111265262 A CN 202111265262A CN 114429961 A CN114429961 A CN 114429961A
Authority
CN
China
Prior art keywords
photoelectric conversion
region
conversion apparatus
semiconductor device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111265262.7A
Other languages
English (en)
Chinese (zh)
Inventor
大贯裕介
岩田旬史
松野靖司
池田一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN114429961A publication Critical patent/CN114429961A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
    • B60R11/00—Arrangements for holding or mounting articles, not otherwise provided for
    • B60R11/04—Mounting of cameras operative during drive; Arrangement of controls thereof relative to the vehicle

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202111265262.7A 2020-10-29 2021-10-28 光电转换设备、光电转换系统和移动体 Pending CN114429961A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020-181379 2020-10-29
JP2020181379 2020-10-29
JP2021-008443 2021-01-22
JP2021008443A JP7558822B2 (ja) 2020-10-29 2021-01-22 光電変換装置、光電変換システム、および移動体

Publications (1)

Publication Number Publication Date
CN114429961A true CN114429961A (zh) 2022-05-03

Family

ID=77897494

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111265262.7A Pending CN114429961A (zh) 2020-10-29 2021-10-28 光电转换设备、光电转换系统和移动体

Country Status (4)

Country Link
US (2) US12176368B2 (https=)
EP (2) EP4345904B1 (https=)
JP (2) JP7558822B2 (https=)
CN (1) CN114429961A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7558822B2 (ja) 2020-10-29 2024-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
WO2023132001A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7743479B2 (ja) * 2023-09-15 2025-09-24 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012070164A1 (ja) * 2010-11-24 2012-05-31 パナソニック株式会社 固体撮像装置及びその製造方法
US20120205769A1 (en) * 2011-02-16 2012-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Back side illuminated image sensor with reduced sidewall-induced leakage
CN110574164A (zh) * 2017-04-04 2019-12-13 索尼半导体解决方案公司 固态摄像装置和电子设备
US20200077055A1 (en) * 2018-08-29 2020-03-05 Samsung Electronics Co., Ltd. Image sensor
US20200119072A1 (en) * 2018-10-10 2020-04-16 Samsung Electronics Co., Ltd. Image sensor including laser shield pattern
US20200128203A1 (en) * 2017-04-27 2020-04-23 Sony Semiconductor Solutions Corporation Solid state imaging device and method of controlling solid state imaging device
CN111183522A (zh) * 2017-10-03 2020-05-19 索尼半导体解决方案公司 固态摄像元件、固态摄像元件的制造方法以及电子设备
JP2020145397A (ja) * 2018-10-17 2020-09-10 キヤノン株式会社 光電変換装置、および、それを含む機器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000196055A (ja) 1998-12-24 2000-07-14 Toshiba Corp 固体撮像装置
JP2001127276A (ja) * 1999-10-26 2001-05-11 Sony Corp 半導体装置及び固体撮像素子
JP4489319B2 (ja) * 2001-04-26 2010-06-23 富士通マイクロエレクトロニクス株式会社 固体撮像装置
US7920185B2 (en) 2004-06-30 2011-04-05 Micron Technology, Inc. Shielding black reference pixels in image sensors
US7830412B2 (en) * 2005-08-22 2010-11-09 Aptina Imaging Corporation Method and apparatus for shielding correction pixels from spurious charges in an imager
JP2007335751A (ja) * 2006-06-16 2007-12-27 Toshiba Corp 固体撮像装置
JP5407761B2 (ja) * 2009-10-30 2014-02-05 ソニー株式会社 固体撮像装置、電子機器
JP2011151461A (ja) 2010-01-19 2011-08-04 Hoya Corp 固体撮像素子
JP2013162336A (ja) 2012-02-06 2013-08-19 Sony Corp 撮像装置及び電子機器
JP5696081B2 (ja) * 2012-03-23 2015-04-08 株式会社東芝 固体撮像装置
WO2017043068A1 (ja) * 2015-09-09 2017-03-16 パナソニックＩｐマネジメント株式会社 固体撮像素子
JP6846648B2 (ja) * 2017-03-21 2021-03-24 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
JP7178605B2 (ja) * 2017-03-22 2022-11-28 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP2021176154A (ja) 2018-07-18 2021-11-04 ソニーセミコンダクタソリューションズ株式会社 受光素子および測距モジュール
US12604554B2 (en) 2020-03-31 2026-04-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus, photoelectric conversion system, and moving object
JP7558822B2 (ja) 2020-10-29 2024-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012070164A1 (ja) * 2010-11-24 2012-05-31 パナソニック株式会社 固体撮像装置及びその製造方法
US20120205769A1 (en) * 2011-02-16 2012-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Back side illuminated image sensor with reduced sidewall-induced leakage
CN110574164A (zh) * 2017-04-04 2019-12-13 索尼半导体解决方案公司 固态摄像装置和电子设备
US20200128203A1 (en) * 2017-04-27 2020-04-23 Sony Semiconductor Solutions Corporation Solid state imaging device and method of controlling solid state imaging device
CN111183522A (zh) * 2017-10-03 2020-05-19 索尼半导体解决方案公司 固态摄像元件、固态摄像元件的制造方法以及电子设备
US20200077055A1 (en) * 2018-08-29 2020-03-05 Samsung Electronics Co., Ltd. Image sensor
US20200119072A1 (en) * 2018-10-10 2020-04-16 Samsung Electronics Co., Ltd. Image sensor including laser shield pattern
JP2020145397A (ja) * 2018-10-17 2020-09-10 キヤノン株式会社 光電変換装置、および、それを含む機器

Also Published As

Publication number Publication date
EP4345904B1 (en) 2025-11-12
US20220139985A1 (en) 2022-05-05
JP7815185B2 (ja) 2026-02-17
US12176368B2 (en) 2024-12-24
JP7558822B2 (ja) 2024-10-01
EP3993041A1 (en) 2022-05-04
EP4345904A3 (en) 2024-06-05
JP2022073873A (ja) 2022-05-17
JP2023158108A (ja) 2023-10-26
US20250072144A1 (en) 2025-02-27
EP4345904A2 (en) 2024-04-03

Similar Documents

Publication Publication Date Title
US12396274B2 (en) Photoelectric conversion apparatus, photoelectric conversion system, and moving object
JP7815185B2 (ja) 光電変換装置、光電変換システム、および移動体
US20250201639A1 (en) Semiconductor device, manufacturing method thereof, and electronic apparatus
CN113675186B (zh) 光电转换装置、光电转换系统和可移动体
CN113473050B (zh) 光电转换装置、光电转换系统和移动物体
JP2022003672A (ja) 光電変換装置、光電変換システム、および移動体
JP2021125491A (ja) 半導体装置、半導体システム、移動体
JP7690308B2 (ja) 光電変換装置、光電変換システム、および移動体
TWI868130B (zh) 成像裝置
JP2022087547A (ja) 光電変換装置、光電変換システム、および移動体
US11757053B2 (en) Package substrate having a sacrificial region for heat sink attachment
JP7767466B2 (ja) 光電変換装置、光電変換システム、および移動体
JP7851341B2 (ja) 光電変換装置、光電変換システム
US20250311474A1 (en) Semiconductor apparatus, photoelectric conversion system and moving body
US20230387157A1 (en) Photoelectric conversion device, manufacturing method of photoelectric conversion device, imaging system, moving unit, and equipment
JP2026021895A (ja) 光電変換装置および機器
JP2025155801A (ja) 半導体装置及び光電変換システム
WO2023090053A1 (ja) 光検出装置及び電子機器
JP2025155802A (ja) 半導体装置、光電変換システム、半導体装置の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination