JP7529764B2 - 基板処理装置、半導体装置の製造方法及びプログラム - Google Patents
基板処理装置、半導体装置の製造方法及びプログラム Download PDFInfo
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- JP7529764B2 JP7529764B2 JP2022508665A JP2022508665A JP7529764B2 JP 7529764 B2 JP7529764 B2 JP 7529764B2 JP 2022508665 A JP2022508665 A JP 2022508665A JP 2022508665 A JP2022508665 A JP 2022508665A JP 7529764 B2 JP7529764 B2 JP 7529764B2
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- 238000012545 processing Methods 0.000 title claims description 304
- 239000000758 substrate Substances 0.000 title claims description 238
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000007789 gas Substances 0.000 claims description 161
- 239000011261 inert gas Substances 0.000 claims description 110
- 238000000034 method Methods 0.000 claims description 98
- 230000008569 process Effects 0.000 claims description 93
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 57
- 238000002156 mixing Methods 0.000 claims description 28
- 230000007246 mechanism Effects 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 238000000137 annealing Methods 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- 238000012546 transfer Methods 0.000 description 12
- 238000002485 combustion reaction Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/011754 WO2021186562A1 (ja) | 2020-03-17 | 2020-03-17 | 基板処理装置、半導体装置の製造方法及びプログラム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021186562A1 JPWO2021186562A1 (enExample) | 2021-09-23 |
| JPWO2021186562A5 JPWO2021186562A5 (enExample) | 2022-07-27 |
| JP7529764B2 true JP7529764B2 (ja) | 2024-08-06 |
Family
ID=77770981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022508665A Active JP7529764B2 (ja) | 2020-03-17 | 2020-03-17 | 基板処理装置、半導体装置の製造方法及びプログラム |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7529764B2 (enExample) |
| TW (1) | TWI775328B (enExample) |
| WO (1) | WO2021186562A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102843769B1 (ko) * | 2024-05-24 | 2025-08-08 | 주식회사 테스 | 기판처리장치 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006274316A (ja) | 2005-03-28 | 2006-10-12 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2012237026A (ja) | 2011-05-10 | 2012-12-06 | Tokyo Electron Ltd | 成膜装置 |
| JP2013084895A (ja) | 2011-09-29 | 2013-05-09 | Mitsubishi Electric Corp | 基板処理装置、基板処理方法、及び太陽電池の製造方法 |
| JP2017212466A (ja) | 2012-03-28 | 2017-11-30 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | シームレスのコバルト間隙充填を可能にする方法 |
| JP2018070906A (ja) | 2016-10-24 | 2018-05-10 | 東京エレクトロン株式会社 | 処理装置及びカバー部材 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3421483B2 (ja) * | 1995-08-25 | 2003-06-30 | 株式会社東芝 | 半導体装置の製造方法 |
| US5907188A (en) * | 1995-08-25 | 1999-05-25 | Kabushiki Kaisha Toshiba | Semiconductor device with conductive oxidation preventing film and method for manufacturing the same |
| US6869641B2 (en) * | 2002-07-03 | 2005-03-22 | Unaxis Balzers Ltd. | Method and apparatus for ALD on a rotary susceptor |
| JP2015195312A (ja) * | 2014-03-31 | 2015-11-05 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
| JP6704008B2 (ja) * | 2018-03-26 | 2020-06-03 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法および記録媒体 |
-
2020
- 2020-03-17 JP JP2022508665A patent/JP7529764B2/ja active Active
- 2020-03-17 WO PCT/JP2020/011754 patent/WO2021186562A1/ja not_active Ceased
-
2021
- 2021-02-26 TW TW110106856A patent/TWI775328B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006274316A (ja) | 2005-03-28 | 2006-10-12 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2012237026A (ja) | 2011-05-10 | 2012-12-06 | Tokyo Electron Ltd | 成膜装置 |
| JP2013084895A (ja) | 2011-09-29 | 2013-05-09 | Mitsubishi Electric Corp | 基板処理装置、基板処理方法、及び太陽電池の製造方法 |
| JP2017212466A (ja) | 2012-03-28 | 2017-11-30 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | シームレスのコバルト間隙充填を可能にする方法 |
| JP2018070906A (ja) | 2016-10-24 | 2018-05-10 | 東京エレクトロン株式会社 | 処理装置及びカバー部材 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2021186562A1 (enExample) | 2021-09-23 |
| WO2021186562A1 (ja) | 2021-09-23 |
| TW202205477A (zh) | 2022-02-01 |
| TWI775328B (zh) | 2022-08-21 |
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