TWI775328B - 基板處理裝置，半導體裝置的製造方法及程式 - Google Patents

基板處理裝置，半導體裝置的製造方法及程式 Download PDF

Info

Publication number
TWI775328B
TWI775328B TW110106856A TW110106856A TWI775328B TW I775328 B TWI775328 B TW I775328B TW 110106856 A TW110106856 A TW 110106856A TW 110106856 A TW110106856 A TW 110106856A TW I775328 B TWI775328 B TW I775328B
Authority
TW
Taiwan
Prior art keywords
processing
substrate
gas
inert gas
holding table
Prior art date
Application number
TW110106856A
Other languages
English (en)
Chinese (zh)
Other versions
TW202205477A (zh
Inventor
天野富大
檜山真
高橋哲
Original Assignee
日商國際電氣股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商國際電氣股份有限公司 filed Critical 日商國際電氣股份有限公司
Publication of TW202205477A publication Critical patent/TW202205477A/zh
Application granted granted Critical
Publication of TWI775328B publication Critical patent/TWI775328B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW110106856A 2020-03-17 2021-02-26 基板處理裝置，半導體裝置的製造方法及程式 TWI775328B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2020/011754 WO2021186562A1 (ja) 2020-03-17 2020-03-17 基板処理装置、半導体装置の製造方法及びプログラム
WOPCT/JP2020/011754 2020-03-17

Publications (2)

Publication Number Publication Date
TW202205477A TW202205477A (zh) 2022-02-01
TWI775328B true TWI775328B (zh) 2022-08-21

Family

ID=77770981

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110106856A TWI775328B (zh) 2020-03-17 2021-02-26 基板處理裝置，半導體裝置的製造方法及程式

Country Status (3)

Country Link
JP (1) JP7529764B2 (enExample)
TW (1) TWI775328B (enExample)
WO (1) WO2021186562A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102843769B1 (ko) * 2024-05-24 2025-08-08 주식회사 테스 기판처리장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907188A (en) * 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US20040052972A1 (en) * 2002-07-03 2004-03-18 Jacques Schmitt Method and apparatus for ALD on a rotary susceptor
TW201536951A (zh) * 2014-03-31 2015-10-01 Nuflare Technology Inc 氣相沈積裝置以及氣相沈積方法
US20180112309A1 (en) * 2016-10-24 2018-04-26 Tokyo Electron Limited Processing Apparatus and Cover Member
US20190294151A1 (en) * 2018-03-26 2019-09-26 Kokusai Electric Corporation Method of Manufacturing Semiconductor Device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3421483B2 (ja) * 1995-08-25 2003-06-30 株式会社東芝 半導体装置の製造方法
JP2006274316A (ja) 2005-03-28 2006-10-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2012237026A (ja) 2011-05-10 2012-12-06 Tokyo Electron Ltd 成膜装置
JP2013084895A (ja) 2011-09-29 2013-05-09 Mitsubishi Electric Corp 基板処理装置、基板処理方法、及び太陽電池の製造方法
US9330939B2 (en) 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907188A (en) * 1995-08-25 1999-05-25 Kabushiki Kaisha Toshiba Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
US20040052972A1 (en) * 2002-07-03 2004-03-18 Jacques Schmitt Method and apparatus for ALD on a rotary susceptor
TW201536951A (zh) * 2014-03-31 2015-10-01 Nuflare Technology Inc 氣相沈積裝置以及氣相沈積方法
US20180112309A1 (en) * 2016-10-24 2018-04-26 Tokyo Electron Limited Processing Apparatus and Cover Member
US20190294151A1 (en) * 2018-03-26 2019-09-26 Kokusai Electric Corporation Method of Manufacturing Semiconductor Device

Also Published As

Publication number Publication date
JPWO2021186562A1 (enExample) 2021-09-23
JP7529764B2 (ja) 2024-08-06
WO2021186562A1 (ja) 2021-09-23
TW202205477A (zh) 2022-02-01

Similar Documents

Publication Publication Date Title
JP6270952B1 (ja) 基板処理装置、半導体装置の製造方法および記録媒体。
US11424128B2 (en) Apparatus and method for etching substrate
JP6944990B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
JP2020053506A (ja) 基板処理装置、半導体装置の製造方法および記録媒体。
US20210043485A1 (en) Substrate processing apparatus and substrate holder
JP6318139B2 (ja) 基板処理装置、半導体装置の製造方法及びプログラム
WO2002059955A1 (fr) Procede et dispositif de traitement thermique
KR20200110122A (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
TWI835206B (zh) 基板處理裝置、基板處理方法、半導體裝置之製造方法及程式
TWI775328B (zh) 基板處理裝置，半導體裝置的製造方法及程式
JP2011100968A (ja) 基板処理装置、基板処理装置の制御方法、半導体デバイスの製造方法及び装置状態遷移方法
WO2012153591A1 (ja) 成膜装置
TWI761758B (zh) 半導體裝置的製造方法、基板處理裝置及記錄媒體
CN107871683B (zh) 半导体器件的制造方法及衬底处理装置
JPWO2017134853A1 (ja) 基板処理装置および半導体装置の製造方法
CN111755359B (zh) 基板处理装置、反应管以及半导体装置的制造方法
JP6992156B2 (ja) 処理装置、排気システム、半導体装置の製造方法
JP4015015B2 (ja) 熱処理装置
JP5006821B2 (ja) 基板処理装置および半導体装置の製造方法
JP4880408B2 (ja) 基板処理装置、基板処理方法、半導体装置の製造方法、メインコントローラおよびプログラム
JP6680895B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
TW202044352A (zh) 基板處理裝置、反應管及半導體裝置之製造方法
US20250308944A1 (en) Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
JP2006261285A (ja) 基板処理装置
WO2025187427A1 (ja) 基板処理装置及び基板処理方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent