JP7529629B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

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Publication number
JP7529629B2
JP7529629B2 JP2021121925A JP2021121925A JP7529629B2 JP 7529629 B2 JP7529629 B2 JP 7529629B2 JP 2021121925 A JP2021121925 A JP 2021121925A JP 2021121925 A JP2021121925 A JP 2021121925A JP 7529629 B2 JP7529629 B2 JP 7529629B2
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Japan
Prior art keywords
fluid
discharge
flow
processing
substrate
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JP2021121925A
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English (en)
Japanese (ja)
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JP2023017577A5 (https=
JP2023017577A (ja
Inventor
紗綾 井上
暁 田中
伸一郎 下村
亨 井原
聡 枇杷
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2021121925A priority Critical patent/JP7529629B2/ja
Priority to TW111126769A priority patent/TW202320200A/zh
Priority to KR1020220088931A priority patent/KR20230016595A/ko
Priority to CN202210873730.7A priority patent/CN115692172A/zh
Priority to US17/814,267 priority patent/US12456632B2/en
Publication of JP2023017577A publication Critical patent/JP2023017577A/ja
Publication of JP2023017577A5 publication Critical patent/JP2023017577A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only

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  • Cleaning Or Drying Semiconductors (AREA)
JP2021121925A 2021-07-26 2021-07-26 基板処理方法および基板処理装置 Active JP7529629B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021121925A JP7529629B2 (ja) 2021-07-26 2021-07-26 基板処理方法および基板処理装置
TW111126769A TW202320200A (zh) 2021-07-26 2022-07-18 基板處理方法及基板處理裝置
KR1020220088931A KR20230016595A (ko) 2021-07-26 2022-07-19 기판 처리 방법 및 기판 처리 장치
CN202210873730.7A CN115692172A (zh) 2021-07-26 2022-07-21 基板处理方法和基板处理装置
US17/814,267 US12456632B2 (en) 2021-07-26 2022-07-22 Substrate processing method and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021121925A JP7529629B2 (ja) 2021-07-26 2021-07-26 基板処理方法および基板処理装置

Publications (3)

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JP2023017577A JP2023017577A (ja) 2023-02-07
JP2023017577A5 JP2023017577A5 (https=) 2023-06-22
JP7529629B2 true JP7529629B2 (ja) 2024-08-06

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JP2021121925A Active JP7529629B2 (ja) 2021-07-26 2021-07-26 基板処理方法および基板処理装置

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US (1) US12456632B2 (https=)
JP (1) JP7529629B2 (https=)
KR (1) KR20230016595A (https=)
CN (1) CN115692172A (https=)
TW (1) TW202320200A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117716476A (zh) * 2021-08-05 2024-03-15 东京毅力科创株式会社 基板处理方法和基板处理装置
JPWO2025018134A1 (https=) * 2023-07-14 2025-01-23

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013062417A (ja) 2011-09-14 2013-04-04 Toshiba Corp 半導体基板の超臨界乾燥方法及び装置
JP2020025013A (ja) 2018-08-07 2020-02-13 東京エレクトロン株式会社 基板処理装置のパーティクル除去方法および基板処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3868804B2 (ja) * 2001-11-27 2007-01-17 アルプス電気株式会社 基板乾燥装置及びそれを用いた基板乾燥方法
US9449862B2 (en) * 2011-06-03 2016-09-20 Tel Nexx, Inc. Parallel single substrate processing system
JP5544666B2 (ja) * 2011-06-30 2014-07-09 セメス株式会社 基板処理装置
JP2014101241A (ja) 2012-11-19 2014-06-05 Japan Organo Co Ltd 精製二酸化炭素の供給システムおよび方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013062417A (ja) 2011-09-14 2013-04-04 Toshiba Corp 半導体基板の超臨界乾燥方法及び装置
JP2020025013A (ja) 2018-08-07 2020-02-13 東京エレクトロン株式会社 基板処理装置のパーティクル除去方法および基板処理装置

Also Published As

Publication number Publication date
JP2023017577A (ja) 2023-02-07
TW202320200A (zh) 2023-05-16
US12456632B2 (en) 2025-10-28
KR20230016595A (ko) 2023-02-02
CN115692172A (zh) 2023-02-03
US20230022814A1 (en) 2023-01-26

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