CN115692172A - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

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Publication number
CN115692172A
CN115692172A CN202210873730.7A CN202210873730A CN115692172A CN 115692172 A CN115692172 A CN 115692172A CN 202210873730 A CN202210873730 A CN 202210873730A CN 115692172 A CN115692172 A CN 115692172A
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CN
China
Prior art keywords
sub
discharge
fluid
flow
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210873730.7A
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English (en)
Chinese (zh)
Inventor
井上纱绫
田中晓
下村伸一郎
井原亨
枇杷聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN115692172A publication Critical patent/CN115692172A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only

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  • Cleaning Or Drying Semiconductors (AREA)
CN202210873730.7A 2021-07-26 2022-07-21 基板处理方法和基板处理装置 Pending CN115692172A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021121925A JP7529629B2 (ja) 2021-07-26 2021-07-26 基板処理方法および基板処理装置
JP2021-121925 2021-07-26

Publications (1)

Publication Number Publication Date
CN115692172A true CN115692172A (zh) 2023-02-03

Family

ID=84976455

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210873730.7A Pending CN115692172A (zh) 2021-07-26 2022-07-21 基板处理方法和基板处理装置

Country Status (5)

Country Link
US (1) US12456632B2 (https=)
JP (1) JP7529629B2 (https=)
KR (1) KR20230016595A (https=)
CN (1) CN115692172A (https=)
TW (1) TW202320200A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117716476A (zh) * 2021-08-05 2024-03-15 东京毅力科创株式会社 基板处理方法和基板处理装置
JPWO2025018134A1 (https=) * 2023-07-14 2025-01-23

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3868804B2 (ja) * 2001-11-27 2007-01-17 アルプス電気株式会社 基板乾燥装置及びそれを用いた基板乾燥方法
US9449862B2 (en) * 2011-06-03 2016-09-20 Tel Nexx, Inc. Parallel single substrate processing system
JP5544666B2 (ja) * 2011-06-30 2014-07-09 セメス株式会社 基板処理装置
JP2013062417A (ja) * 2011-09-14 2013-04-04 Toshiba Corp 半導体基板の超臨界乾燥方法及び装置
JP2014101241A (ja) 2012-11-19 2014-06-05 Japan Organo Co Ltd 精製二酸化炭素の供給システムおよび方法
JP7080134B2 (ja) * 2018-08-07 2022-06-03 東京エレクトロン株式会社 基板処理装置のパーティクル除去方法および基板処理装置

Also Published As

Publication number Publication date
JP7529629B2 (ja) 2024-08-06
JP2023017577A (ja) 2023-02-07
TW202320200A (zh) 2023-05-16
US12456632B2 (en) 2025-10-28
KR20230016595A (ko) 2023-02-02
US20230022814A1 (en) 2023-01-26

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