JP7513634B2 - 撮像装置および撮像装置の製造方法 - Google Patents

撮像装置および撮像装置の製造方法 Download PDF

Info

Publication number
JP7513634B2
JP7513634B2 JP2021562472A JP2021562472A JP7513634B2 JP 7513634 B2 JP7513634 B2 JP 7513634B2 JP 2021562472 A JP2021562472 A JP 2021562472A JP 2021562472 A JP2021562472 A JP 2021562472A JP 7513634 B2 JP7513634 B2 JP 7513634B2
Authority
JP
Japan
Prior art keywords
imaging
light
imaging device
sealing
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021562472A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021111716A1 (https=
Inventor
睦夫 辻
大祐 茅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of JPWO2021111716A1 publication Critical patent/JPWO2021111716A1/ja
Application granted granted Critical
Publication of JP7513634B2 publication Critical patent/JP7513634B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/804Containers or encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/003Alignment of optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/021Mountings, adjusting means, or light-tight connections, for optical elements for lenses for more than one lens
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/023Mountings, adjusting means, or light-tight connections, for optical elements for lenses permitting adjustment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021562472A 2019-12-04 2020-09-30 撮像装置および撮像装置の製造方法 Active JP7513634B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019219540 2019-12-04
JP2019219540 2019-12-04
PCT/JP2020/037164 WO2021111716A1 (ja) 2019-12-04 2020-09-30 撮像装置および撮像装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021111716A1 JPWO2021111716A1 (https=) 2021-06-10
JP7513634B2 true JP7513634B2 (ja) 2024-07-09

Family

ID=76221896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021562472A Active JP7513634B2 (ja) 2019-12-04 2020-09-30 撮像装置および撮像装置の製造方法

Country Status (5)

Country Link
US (1) US12356737B2 (https=)
EP (1) EP4071794A4 (https=)
JP (1) JP7513634B2 (https=)
CN (1) CN114730785A (https=)
WO (1) WO2021111716A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021111715A1 (ja) 2019-12-04 2021-06-10 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像装置の製造方法
JP7834422B2 (ja) * 2021-09-14 2026-03-24 ソニーセミコンダクタソリューションズ株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308302A (ja) 2000-04-27 2001-11-02 Mitsubishi Electric Corp 撮像装置および撮像装置搭載製品ならびに撮像装置製造方法
JP2008258921A (ja) 2007-04-04 2008-10-23 Sharp Corp 固体撮像装置およびそれを備えた電子機器
WO2016129409A1 (ja) 2015-02-13 2016-08-18 ソニー株式会社 撮像素子、製造方法、および電子機器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321859A (ja) * 1989-06-20 1991-01-30 Nippondenso Co Ltd 酸素センサー
JPH085566Y2 (ja) * 1989-07-12 1996-02-14 オリンパス光学工業株式会社 固体撮像装置
JPH042747A (ja) 1990-04-19 1992-01-07 Furukawa Alum Co Ltd アルミニウム合金制振材料の製造方法
JPH0562057A (ja) * 1991-09-03 1993-03-12 Oki Electric Ind Co Ltd 自動取引装置
JPH0562057U (ja) * 1992-01-29 1993-08-13 京セラ株式会社 撮像装置
JP3651580B2 (ja) * 2000-04-07 2005-05-25 三菱電機株式会社 撮像装置及びその製造方法
JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
KR101100790B1 (ko) * 2006-09-15 2012-01-02 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2008245244A (ja) 2007-02-26 2008-10-09 Sony Corp 撮像素子パッケージ、撮像素子モジュールおよびレンズ鏡筒並びに撮像装置
JP2009021307A (ja) * 2007-07-10 2009-01-29 Sharp Corp 半導体装置、撮像装置、およびそれらの製造方法
JP5324890B2 (ja) * 2008-11-11 2013-10-23 ラピスセミコンダクタ株式会社 カメラモジュールおよびその製造方法
US8890269B2 (en) * 2012-05-31 2014-11-18 Stmicroelectronics Pte Ltd. Optical sensor package with through vias

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308302A (ja) 2000-04-27 2001-11-02 Mitsubishi Electric Corp 撮像装置および撮像装置搭載製品ならびに撮像装置製造方法
JP2008258921A (ja) 2007-04-04 2008-10-23 Sharp Corp 固体撮像装置およびそれを備えた電子機器
WO2016129409A1 (ja) 2015-02-13 2016-08-18 ソニー株式会社 撮像素子、製造方法、および電子機器

Also Published As

Publication number Publication date
WO2021111716A1 (ja) 2021-06-10
CN114730785A (zh) 2022-07-08
EP4071794A1 (en) 2022-10-12
US12356737B2 (en) 2025-07-08
US20220415937A1 (en) 2022-12-29
EP4071794A4 (en) 2023-01-04
JPWO2021111716A1 (https=) 2021-06-10

Similar Documents

Publication Publication Date Title
EP1462839B1 (en) Module for optical image capturing device comprising objective lens and image sensor
US8823872B2 (en) Image pickup module with improved flatness of image sensor and via electrodes
US9455358B2 (en) Image pickup module and image pickup unit
US6784409B2 (en) Electronic device with encapsulant of photo-set resin and production process of same
US7728398B2 (en) Micro camera module and method of manufacturing the same
JP6787378B2 (ja) インターポーザ基板
CN1264037C (zh) 光学模块及其制造方法和电子仪器
JP2013214962A (ja) 底部にキャビティを備えるウエハーレベル光学部品とフリップチップ組立を用いた小型フォームファクタモジュール
JP4521272B2 (ja) カメラモジュール、カメラモジュール中で使用されるホルダ、カメラシステム及びカメラモジュールの製造方法
US20220157865A1 (en) Semiconductor apparatus, imaging apparatus, and method of producing a semiconductor apparatus
JP7513634B2 (ja) 撮像装置および撮像装置の製造方法
JP2002329851A (ja) 撮像モジュールとその製造方法、および撮像モジュールを備えた撮像機器
JP2000269472A (ja) 撮像装置
WO2023032260A1 (ja) 半導体装置および電子機器
JP4352664B2 (ja) 半導体装置及びその製造方法
JP7740990B2 (ja) 撮像装置および撮像装置の製造方法
EP4675677A1 (en) Semiconductor device, electronic apparatus, and method for producing semiconductor device
WO2024053466A1 (ja) 半導体装置および電子機器
JP2014045048A (ja) 固体撮像装置及びその製造方法
JPH09199701A (ja) 固体撮像装置
US11832796B2 (en) Imaging module, endoscope system, and imaging module manufacturing method
JP2006078517A (ja) 撮像モジュール及び撮像モジュールの製造方法
JP2011211379A (ja) 撮像装置
KR100658149B1 (ko) 이미지센서 모듈과 이를 포함하는 카메라 모듈 패키지
JP2008166521A (ja) 固体撮像装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230828

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240312

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240430

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240528

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240627

R150 Certificate of patent or registration of utility model

Ref document number: 7513634

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150