CN114730785A - 成像设备及其制造方法 - Google Patents

成像设备及其制造方法 Download PDF

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Publication number
CN114730785A
CN114730785A CN202080082540.2A CN202080082540A CN114730785A CN 114730785 A CN114730785 A CN 114730785A CN 202080082540 A CN202080082540 A CN 202080082540A CN 114730785 A CN114730785 A CN 114730785A
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CN
China
Prior art keywords
imaging
light
chip
imaging element
wiring substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202080082540.2A
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English (en)
Chinese (zh)
Inventor
辻睦夫
茅野大祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN114730785A publication Critical patent/CN114730785A/zh
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/003—Alignment of optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/021—Mountings, adjusting means, or light-tight connections, for optical elements for lenses for more than one lens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/023—Mountings, adjusting means, or light-tight connections, for optical elements for lenses permitting adjustment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080082540.2A 2019-12-04 2020-09-30 成像设备及其制造方法 Withdrawn CN114730785A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019219540 2019-12-04
JP2019-219540 2019-12-04
PCT/JP2020/037164 WO2021111716A1 (ja) 2019-12-04 2020-09-30 撮像装置および撮像装置の製造方法

Publications (1)

Publication Number Publication Date
CN114730785A true CN114730785A (zh) 2022-07-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080082540.2A Withdrawn CN114730785A (zh) 2019-12-04 2020-09-30 成像设备及其制造方法

Country Status (5)

Country Link
US (1) US12356737B2 (https=)
EP (1) EP4071794A4 (https=)
JP (1) JP7513634B2 (https=)
CN (1) CN114730785A (https=)
WO (1) WO2021111716A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021111715A1 (ja) 2019-12-04 2021-06-10 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像装置の製造方法
JP7834422B2 (ja) * 2021-09-14 2026-03-24 ソニーセミコンダクタソリューションズ株式会社 半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321859A (ja) * 1989-06-20 1991-01-30 Nippondenso Co Ltd 酸素センサー
JPH085566Y2 (ja) * 1989-07-12 1996-02-14 オリンパス光学工業株式会社 固体撮像装置
JPH042747A (ja) 1990-04-19 1992-01-07 Furukawa Alum Co Ltd アルミニウム合金制振材料の製造方法
JPH0562057A (ja) * 1991-09-03 1993-03-12 Oki Electric Ind Co Ltd 自動取引装置
JPH0562057U (ja) * 1992-01-29 1993-08-13 京セラ株式会社 撮像装置
JP3651580B2 (ja) * 2000-04-07 2005-05-25 三菱電機株式会社 撮像装置及びその製造方法
JP3626661B2 (ja) 2000-04-27 2005-03-09 三菱電機株式会社 撮像装置および撮像装置搭載製品ならびに撮像装置製造方法
JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
KR101100790B1 (ko) * 2006-09-15 2012-01-02 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2008245244A (ja) 2007-02-26 2008-10-09 Sony Corp 撮像素子パッケージ、撮像素子モジュールおよびレンズ鏡筒並びに撮像装置
JP4310348B2 (ja) 2007-04-04 2009-08-05 シャープ株式会社 固体撮像装置およびそれを備えた電子機器
JP2009021307A (ja) * 2007-07-10 2009-01-29 Sharp Corp 半導体装置、撮像装置、およびそれらの製造方法
JP5324890B2 (ja) * 2008-11-11 2013-10-23 ラピスセミコンダクタ株式会社 カメラモジュールおよびその製造方法
US8890269B2 (en) * 2012-05-31 2014-11-18 Stmicroelectronics Pte Ltd. Optical sensor package with through vias
US20180006070A1 (en) 2015-02-13 2018-01-04 Sony Corporation Image sensor, method of manufacturing the same, and electronic apparatus

Also Published As

Publication number Publication date
WO2021111716A1 (ja) 2021-06-10
EP4071794A1 (en) 2022-10-12
JP7513634B2 (ja) 2024-07-09
US12356737B2 (en) 2025-07-08
US20220415937A1 (en) 2022-12-29
EP4071794A4 (en) 2023-01-04
JPWO2021111716A1 (https=) 2021-06-10

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