JP7512067B2 - パターン崩壊を緩和するリンス溶液の使用時点での混合 - Google Patents

パターン崩壊を緩和するリンス溶液の使用時点での混合 Download PDF

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Publication number
JP7512067B2
JP7512067B2 JP2020069466A JP2020069466A JP7512067B2 JP 7512067 B2 JP7512067 B2 JP 7512067B2 JP 2020069466 A JP2020069466 A JP 2020069466A JP 2020069466 A JP2020069466 A JP 2020069466A JP 7512067 B2 JP7512067 B2 JP 7512067B2
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Japan
Prior art keywords
solution
photoresist
buffer solution
patterned photoresist
relaxation
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JP2020069466A
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Japanese (ja)
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JP2020173442A (ja
JP2020173442A5 (enExample
Inventor
フリ リオール
直樹 柴田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JP2020173442A5 publication Critical patent/JP2020173442A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2020069466A 2019-04-09 2020-04-08 パターン崩壊を緩和するリンス溶液の使用時点での混合 Active JP7512067B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962831465P 2019-04-09 2019-04-09
US62/831465 2019-04-09
US16/674,124 US11762297B2 (en) 2019-04-09 2019-11-05 Point-of-use blending of rinse solutions to mitigate pattern collapse
US16/674124 2019-11-05

Publications (3)

Publication Number Publication Date
JP2020173442A JP2020173442A (ja) 2020-10-22
JP2020173442A5 JP2020173442A5 (enExample) 2023-04-04
JP7512067B2 true JP7512067B2 (ja) 2024-07-08

Family

ID=72747945

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JP2020069466A Active JP7512067B2 (ja) 2019-04-09 2020-04-08 パターン崩壊を緩和するリンス溶液の使用時点での混合

Country Status (5)

Country Link
US (2) US11762297B2 (enExample)
JP (1) JP7512067B2 (enExample)
KR (1) KR102755185B1 (enExample)
CN (1) CN111796494A (enExample)
TW (1) TWI861087B (enExample)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014713A (ja) 2002-06-05 2004-01-15 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP2007095888A (ja) 2005-09-28 2007-04-12 Tokyo Electron Ltd リンス処理方法、現像処理方法及び現像装置
JP2007150064A (ja) 2005-11-29 2007-06-14 Tokyo Electron Ltd リンス処理方法、現像処理装置、および制御プログラム
JP2012211949A (ja) 2011-03-30 2012-11-01 Daikin Ind Ltd リソグラフィ用リンス液及びパターン形成方法
JP2013069840A (ja) 2011-09-22 2013-04-18 Toshiba Corp 薬液処理方法及び薬液処理装置
JP2015023172A (ja) 2013-07-19 2015-02-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理用記録媒体

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331364A (en) * 1992-07-20 1994-07-19 Thatcher Chemical Company Apparatus for diluting and mixing chemicals and automatically feeding the diluted chemicals to a photographic processor on demand
JP3410342B2 (ja) * 1997-01-31 2003-05-26 東京エレクトロン株式会社 塗布装置
JP3869306B2 (ja) * 2001-08-28 2007-01-17 東京エレクトロン株式会社 現像処理方法および現像液塗布装置
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
US6872014B1 (en) * 2003-11-21 2005-03-29 Asml Netherlands B.V. Method for developing a photoresist pattern
US20050250054A1 (en) * 2004-05-10 2005-11-10 Ching-Yu Chang Development of photolithographic masks for semiconductors
JP4531726B2 (ja) * 2006-06-22 2010-08-25 Ａｚエレクトロニックマテリアルズ株式会社 微細化されたレジストパターンの形成方法
WO2011019189A2 (ko) 2009-08-11 2011-02-17 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
WO2013022673A2 (en) * 2011-08-10 2013-02-14 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions
JP5977727B2 (ja) * 2013-11-13 2016-08-24 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
US9570285B2 (en) * 2015-04-17 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and methods thereof
US10386723B2 (en) * 2016-03-04 2019-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with flexible solution adjustment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014713A (ja) 2002-06-05 2004-01-15 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP2007095888A (ja) 2005-09-28 2007-04-12 Tokyo Electron Ltd リンス処理方法、現像処理方法及び現像装置
JP2007150064A (ja) 2005-11-29 2007-06-14 Tokyo Electron Ltd リンス処理方法、現像処理装置、および制御プログラム
JP2012211949A (ja) 2011-03-30 2012-11-01 Daikin Ind Ltd リソグラフィ用リンス液及びパターン形成方法
JP2013069840A (ja) 2011-09-22 2013-04-18 Toshiba Corp 薬液処理方法及び薬液処理装置
JP2015023172A (ja) 2013-07-19 2015-02-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理用記録媒体

Also Published As

Publication number Publication date
JP2020173442A (ja) 2020-10-22
TWI861087B (zh) 2024-11-11
TW202103812A (zh) 2021-02-01
US11762297B2 (en) 2023-09-19
KR20200119219A (ko) 2020-10-19
US20200326628A1 (en) 2020-10-15
CN111796494A (zh) 2020-10-20
KR102755185B1 (ko) 2025-01-14
US20230324808A1 (en) 2023-10-12
US12393121B2 (en) 2025-08-19

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