CN111796494A - 清洗溶液的使用点共混以缓解图案塌陷 - Google Patents

清洗溶液的使用点共混以缓解图案塌陷 Download PDF

Info

Publication number
CN111796494A
CN111796494A CN202010273764.3A CN202010273764A CN111796494A CN 111796494 A CN111796494 A CN 111796494A CN 202010273764 A CN202010273764 A CN 202010273764A CN 111796494 A CN111796494 A CN 111796494A
Authority
CN
China
Prior art keywords
solution
mitigation
conditioned
patterned photoresist
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010273764.3A
Other languages
English (en)
Chinese (zh)
Inventor
利奥尔·胡利
柴田直树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN111796494A publication Critical patent/CN111796494A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202010273764.3A 2019-04-09 2020-04-09 清洗溶液的使用点共混以缓解图案塌陷 Pending CN111796494A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962831465P 2019-04-09 2019-04-09
US62/831,465 2019-04-09
US16/674,124 US11762297B2 (en) 2019-04-09 2019-11-05 Point-of-use blending of rinse solutions to mitigate pattern collapse
US16/674,124 2019-11-05

Publications (1)

Publication Number Publication Date
CN111796494A true CN111796494A (zh) 2020-10-20

Family

ID=72747945

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010273764.3A Pending CN111796494A (zh) 2019-04-09 2020-04-09 清洗溶液的使用点共混以缓解图案塌陷

Country Status (5)

Country Link
US (2) US11762297B2 (enExample)
JP (1) JP7512067B2 (enExample)
KR (1) KR102755185B1 (enExample)
CN (1) CN111796494A (enExample)
TW (1) TWI861087B (enExample)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331364A (en) * 1992-07-20 1994-07-19 Thatcher Chemical Company Apparatus for diluting and mixing chemicals and automatically feeding the diluted chemicals to a photographic processor on demand
US5968268A (en) * 1997-01-31 1999-10-19 Tokyo Electron Limited Coating apparatus and coating method
US20030044731A1 (en) * 2001-08-28 2003-03-06 Tokyo Electron Limited Method for developing processing and apparatus for supplying developing solution
JP2004014713A (ja) * 2002-06-05 2004-01-15 Tokyo Electron Ltd 現像処理方法及び現像処理装置
US6872014B1 (en) * 2003-11-21 2005-03-29 Asml Netherlands B.V. Method for developing a photoresist pattern
CN1696834A (zh) * 2004-05-10 2005-11-16 台湾积体电路制造股份有限公司 光致抗蚀剂层的显影方法
CN1717632A (zh) * 2002-12-03 2006-01-04 Az电子材料（日本）株式会社 平版印刷用冲洗液以及用其形成抗蚀图案的方法
US20070072092A1 (en) * 2005-09-28 2007-03-29 Tokyo Electron Limited Rinse treatment method, developing treatment method and developing apparatus
CN101473271A (zh) * 2006-06-22 2009-07-01 Az电子材料（日本）株式会社 微细化的抗蚀图案的形成方法
US20150128995A1 (en) * 2013-11-13 2015-05-14 Tokyo Electron Limited Substrate cleaning method, substrate cleaning system, and memory medium
US20170255101A1 (en) * 2016-03-04 2017-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography Patterning with Flexible Solution Adjustment

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4494332B2 (ja) 2005-11-29 2010-06-30 東京エレクトロン株式会社 リンス処理方法、現像処理装置、および制御プログラム
WO2011019189A2 (ko) 2009-08-11 2011-02-17 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
JP2012211949A (ja) 2011-03-30 2012-11-01 Daikin Ind Ltd リソグラフィ用リンス液及びパターン形成方法
WO2013022673A2 (en) * 2011-08-10 2013-02-14 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions
JP2013069840A (ja) 2011-09-22 2013-04-18 Toshiba Corp 薬液処理方法及び薬液処理装置
JP5857001B2 (ja) 2013-07-19 2016-02-10 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理用記録媒体
US9570285B2 (en) * 2015-04-17 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and methods thereof

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331364A (en) * 1992-07-20 1994-07-19 Thatcher Chemical Company Apparatus for diluting and mixing chemicals and automatically feeding the diluted chemicals to a photographic processor on demand
US5968268A (en) * 1997-01-31 1999-10-19 Tokyo Electron Limited Coating apparatus and coating method
US20030044731A1 (en) * 2001-08-28 2003-03-06 Tokyo Electron Limited Method for developing processing and apparatus for supplying developing solution
JP2004014713A (ja) * 2002-06-05 2004-01-15 Tokyo Electron Ltd 現像処理方法及び現像処理装置
CN1717632A (zh) * 2002-12-03 2006-01-04 Az电子材料（日本）株式会社 平版印刷用冲洗液以及用其形成抗蚀图案的方法
US6872014B1 (en) * 2003-11-21 2005-03-29 Asml Netherlands B.V. Method for developing a photoresist pattern
CN1696834A (zh) * 2004-05-10 2005-11-16 台湾积体电路制造股份有限公司 光致抗蚀剂层的显影方法
US20070072092A1 (en) * 2005-09-28 2007-03-29 Tokyo Electron Limited Rinse treatment method, developing treatment method and developing apparatus
CN101473271A (zh) * 2006-06-22 2009-07-01 Az电子材料（日本）株式会社 微细化的抗蚀图案的形成方法
US20150128995A1 (en) * 2013-11-13 2015-05-14 Tokyo Electron Limited Substrate cleaning method, substrate cleaning system, and memory medium
US20170255101A1 (en) * 2016-03-04 2017-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography Patterning with Flexible Solution Adjustment
CN107153328A (zh) * 2016-03-04 2017-09-12 台湾积体电路制造股份有限公司 具有灵活的溶液调整的光刻图案化的方法及系统

Also Published As

Publication number Publication date
JP2020173442A (ja) 2020-10-22
TWI861087B (zh) 2024-11-11
TW202103812A (zh) 2021-02-01
US11762297B2 (en) 2023-09-19
KR20200119219A (ko) 2020-10-19
JP7512067B2 (ja) 2024-07-08
US20200326628A1 (en) 2020-10-15
KR102755185B1 (ko) 2025-01-14
US20230324808A1 (en) 2023-10-12
US12393121B2 (en) 2025-08-19

Similar Documents

Publication Publication Date Title
JP6742720B2 (ja) 酸化物層のエッチング方法及びエッチング装置
JP2016127285A (ja) 活性化を使用しない、シリコン酸化物のための異方性原子層エッチング
US11531271B2 (en) Lithography patterning with flexible solution adjustment
US9466502B2 (en) Line width roughness improvement with noble gas plasma
JP5295968B2 (ja) 半導体装置の製造方法および装置
CN102187453B (zh) 用硬掩模及两次曝光形成半导体元件的接触及导通孔
CN109074004B (zh) 利用选定的蚀刻剂气体混合物以及调整操作变量修整无机抗蚀剂的方法
JP2009044169A (ja) ウェーハトラック環境内のプラズマ処理チャンバを用いて半導体ウェーハを処理する方法及び装置
WO2009042438A1 (en) Line width roughness control with arc layer open
CN108885402B (zh) 选择性SiARC去除
US20220334485A1 (en) Point of Use Solvent Mixing for Film Removal
US20040185674A1 (en) Nitrogen-free hard mask over low K dielectric
JP7512067B2 (ja) パターン崩壊を緩和するリンス溶液の使用時点での混合
US20250087456A1 (en) High selectivity and uniform dielectric etch
Tharchin et al. Yield Enhancement Due to Addition of Bevel Cleans at Middle of Line (MOL) Zone

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination