TWI861087B - 減輕圖案崩塌用的使用點清洗溶液混合 - Google Patents

減輕圖案崩塌用的使用點清洗溶液混合 Download PDF

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Publication number
TWI861087B
TWI861087B TW109111717A TW109111717A TWI861087B TW I861087 B TWI861087 B TW I861087B TW 109111717 A TW109111717 A TW 109111717A TW 109111717 A TW109111717 A TW 109111717A TW I861087 B TWI861087 B TW I861087B
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TW
Taiwan
Prior art keywords
buffer solution
patterned photoresist
solution
dispensing
adjusted
Prior art date
Application number
TW109111717A
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English (en)
Chinese (zh)
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TW202103812A (zh
Inventor
里歐 修里
柴田直樹
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202103812A publication Critical patent/TW202103812A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW109111717A 2019-04-09 2020-04-08 減輕圖案崩塌用的使用點清洗溶液混合 TWI861087B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962831465P 2019-04-09 2019-04-09
US62/831,465 2019-04-09
US16/674,124 US11762297B2 (en) 2019-04-09 2019-11-05 Point-of-use blending of rinse solutions to mitigate pattern collapse
US16/674,124 2019-11-05

Publications (2)

Publication Number Publication Date
TW202103812A TW202103812A (zh) 2021-02-01
TWI861087B true TWI861087B (zh) 2024-11-11

Family

ID=72747945

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109111717A TWI861087B (zh) 2019-04-09 2020-04-08 減輕圖案崩塌用的使用點清洗溶液混合

Country Status (5)

Country Link
US (2) US11762297B2 (enExample)
JP (1) JP7512067B2 (enExample)
KR (1) KR102755185B1 (enExample)
CN (1) CN111796494A (enExample)
TW (1) TWI861087B (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI519910B (zh) * 2009-08-11 2016-02-01 東友精細化工有限公司 光阻剝離液組成物及使用它之剝離光阻方法
TW201638679A (zh) * 2015-04-17 2016-11-01 台灣積體電路製造股份有限公司 半導體裝置的製造方法
US9551936B2 (en) * 2011-08-10 2017-01-24 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions
US20170255101A1 (en) * 2016-03-04 2017-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography Patterning with Flexible Solution Adjustment

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331364A (en) * 1992-07-20 1994-07-19 Thatcher Chemical Company Apparatus for diluting and mixing chemicals and automatically feeding the diluted chemicals to a photographic processor on demand
JP3410342B2 (ja) * 1997-01-31 2003-05-26 東京エレクトロン株式会社 塗布装置
JP3869306B2 (ja) * 2001-08-28 2007-01-17 東京エレクトロン株式会社 現像処理方法および現像液塗布装置
JP3859549B2 (ja) 2002-06-05 2006-12-20 東京エレクトロン株式会社 現像処理方法及び現像処理装置
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
US6872014B1 (en) * 2003-11-21 2005-03-29 Asml Netherlands B.V. Method for developing a photoresist pattern
US20050250054A1 (en) * 2004-05-10 2005-11-10 Ching-Yu Chang Development of photolithographic masks for semiconductors
JP4514224B2 (ja) 2005-09-28 2010-07-28 東京エレクトロン株式会社 リンス処理方法、現像処理方法及び現像装置
JP4494332B2 (ja) 2005-11-29 2010-06-30 東京エレクトロン株式会社 リンス処理方法、現像処理装置、および制御プログラム
JP4531726B2 (ja) * 2006-06-22 2010-08-25 Ａｚエレクトロニックマテリアルズ株式会社 微細化されたレジストパターンの形成方法
JP2012211949A (ja) 2011-03-30 2012-11-01 Daikin Ind Ltd リソグラフィ用リンス液及びパターン形成方法
JP2013069840A (ja) 2011-09-22 2013-04-18 Toshiba Corp 薬液処理方法及び薬液処理装置
JP5857001B2 (ja) 2013-07-19 2016-02-10 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理用記録媒体
JP5977727B2 (ja) * 2013-11-13 2016-08-24 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI519910B (zh) * 2009-08-11 2016-02-01 東友精細化工有限公司 光阻剝離液組成物及使用它之剝離光阻方法
US9551936B2 (en) * 2011-08-10 2017-01-24 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions
TW201638679A (zh) * 2015-04-17 2016-11-01 台灣積體電路製造股份有限公司 半導體裝置的製造方法
US20170255101A1 (en) * 2016-03-04 2017-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography Patterning with Flexible Solution Adjustment

Also Published As

Publication number Publication date
JP2020173442A (ja) 2020-10-22
TW202103812A (zh) 2021-02-01
US11762297B2 (en) 2023-09-19
KR20200119219A (ko) 2020-10-19
JP7512067B2 (ja) 2024-07-08
US20200326628A1 (en) 2020-10-15
CN111796494A (zh) 2020-10-20
KR102755185B1 (ko) 2025-01-14
US20230324808A1 (en) 2023-10-12
US12393121B2 (en) 2025-08-19

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