KR102755185B1 - 패턴 붕괴를 완화시키기 위한 세정 용액의 사용 시점 블렌딩 - Google Patents

패턴 붕괴를 완화시키기 위한 세정 용액의 사용 시점 블렌딩 Download PDF

Info

Publication number
KR102755185B1
KR102755185B1 KR1020200043495A KR20200043495A KR102755185B1 KR 102755185 B1 KR102755185 B1 KR 102755185B1 KR 1020200043495 A KR1020200043495 A KR 1020200043495A KR 20200043495 A KR20200043495 A KR 20200043495A KR 102755185 B1 KR102755185 B1 KR 102755185B1
Authority
KR
South Korea
Prior art keywords
solution
patterned photoresist
dispensing
relaxation
pattern collapse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020200043495A
Other languages
English (en)
Korean (ko)
Other versions
KR20200119219A (ko
Inventor
리오르 훌리
나오키 시바타
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20200119219A publication Critical patent/KR20200119219A/ko
Application granted granted Critical
Publication of KR102755185B1 publication Critical patent/KR102755185B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H01L21/02057—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H01L21/0271—
    • H01L21/67051—
    • H01L21/68764—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020200043495A 2019-04-09 2020-04-09 패턴 붕괴를 완화시키기 위한 세정 용액의 사용 시점 블렌딩 Active KR102755185B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962831465P 2019-04-09 2019-04-09
US62/831,465 2019-04-09
US16/674,124 US11762297B2 (en) 2019-04-09 2019-11-05 Point-of-use blending of rinse solutions to mitigate pattern collapse
US16/674,124 2019-11-05

Publications (2)

Publication Number Publication Date
KR20200119219A KR20200119219A (ko) 2020-10-19
KR102755185B1 true KR102755185B1 (ko) 2025-01-14

Family

ID=72747945

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200043495A Active KR102755185B1 (ko) 2019-04-09 2020-04-09 패턴 붕괴를 완화시키기 위한 세정 용액의 사용 시점 블렌딩

Country Status (5)

Country Link
US (2) US11762297B2 (enExample)
JP (1) JP7512067B2 (enExample)
KR (1) KR102755185B1 (enExample)
CN (1) CN111796494A (enExample)
TW (1) TWI861087B (enExample)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014713A (ja) * 2002-06-05 2004-01-15 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP2007095888A (ja) * 2005-09-28 2007-04-12 Tokyo Electron Ltd リンス処理方法、現像処理方法及び現像装置
JP2012211949A (ja) * 2011-03-30 2012-11-01 Daikin Ind Ltd リソグラフィ用リンス液及びパターン形成方法
JP2013069840A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 薬液処理方法及び薬液処理装置
JP2015023172A (ja) * 2013-07-19 2015-02-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理用記録媒体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331364A (en) * 1992-07-20 1994-07-19 Thatcher Chemical Company Apparatus for diluting and mixing chemicals and automatically feeding the diluted chemicals to a photographic processor on demand
JP3410342B2 (ja) * 1997-01-31 2003-05-26 東京エレクトロン株式会社 塗布装置
JP3869306B2 (ja) * 2001-08-28 2007-01-17 東京エレクトロン株式会社 現像処理方法および現像液塗布装置
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
US6872014B1 (en) * 2003-11-21 2005-03-29 Asml Netherlands B.V. Method for developing a photoresist pattern
US20050250054A1 (en) * 2004-05-10 2005-11-10 Ching-Yu Chang Development of photolithographic masks for semiconductors
JP4494332B2 (ja) 2005-11-29 2010-06-30 東京エレクトロン株式会社 リンス処理方法、現像処理装置、および制御プログラム
JP4531726B2 (ja) * 2006-06-22 2010-08-25 Ａｚエレクトロニックマテリアルズ株式会社 微細化されたレジストパターンの形成方法
WO2011019189A2 (ko) 2009-08-11 2011-02-17 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
WO2013022673A2 (en) * 2011-08-10 2013-02-14 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions
JP5977727B2 (ja) * 2013-11-13 2016-08-24 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
US9570285B2 (en) * 2015-04-17 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and methods thereof
US10386723B2 (en) * 2016-03-04 2019-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with flexible solution adjustment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014713A (ja) * 2002-06-05 2004-01-15 Tokyo Electron Ltd 現像処理方法及び現像処理装置
JP2007095888A (ja) * 2005-09-28 2007-04-12 Tokyo Electron Ltd リンス処理方法、現像処理方法及び現像装置
JP2012211949A (ja) * 2011-03-30 2012-11-01 Daikin Ind Ltd リソグラフィ用リンス液及びパターン形成方法
JP2013069840A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 薬液処理方法及び薬液処理装置
JP2015023172A (ja) * 2013-07-19 2015-02-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理用記録媒体

Also Published As

Publication number Publication date
JP2020173442A (ja) 2020-10-22
TWI861087B (zh) 2024-11-11
TW202103812A (zh) 2021-02-01
US11762297B2 (en) 2023-09-19
KR20200119219A (ko) 2020-10-19
JP7512067B2 (ja) 2024-07-08
US20200326628A1 (en) 2020-10-15
CN111796494A (zh) 2020-10-20
US20230324808A1 (en) 2023-10-12
US12393121B2 (en) 2025-08-19

Similar Documents

Publication Publication Date Title
TWI711887B (zh) 低粗糙度之極紫外光微影技術
US11531271B2 (en) Lithography patterning with flexible solution adjustment
US7637269B1 (en) Low damage method for ashing a substrate using CO2/CO-based process
US9177796B2 (en) Optically tuned hardmask for multi-patterning applications
CN109074004B (zh) 利用选定的蚀刻剂气体混合物以及调整操作变量修整无机抗蚀剂的方法
US8753804B2 (en) Line width roughness improvement with noble gas plasma
JP2011040757A (ja) 六フッ化硫黄（ｓｆ６）および炭化水素ガスを用いた反射防止層のパターニング方法
US20110076623A1 (en) Method for reworking silicon-containing arc layers on a substrate
TWI804806B (zh) 製造半導體元件的方法
TWI659259B (zh) 用於選擇性之矽抗反射塗層移除的方法
CN108885977B (zh) 在集成方案的各个阶段期间进行图案化的修整方法
CN1768415A (zh) 在晶片流水线环境中通过等离子处理室处理半导体晶片的方法和装置
US9418865B2 (en) Wet etching of silicon containing antireflective coatings
US12393121B2 (en) Point-of-use blending of rinse solutions for EUV processing to mitigate pattern collapse
CN1846297A (zh) 在低温及减小的沉积速率下形成teos盖层的方法
KR20210092834A (ko) 조명된 에칭 용액을 사용하여 재료의 거칠기를 감소시키기 위한 공정 시스템 및 플랫폼
US7604908B2 (en) Fine pattern forming method
TW202416053A (zh) 半導體裝置的製造方法及半導體裝置製造工具
CN122043869A (zh) 制造半导体器件的方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000