JP7506753B2 - 金属充填微細構造体の製造方法 - Google Patents

金属充填微細構造体の製造方法 Download PDF

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Publication number
JP7506753B2
JP7506753B2 JP2022545520A JP2022545520A JP7506753B2 JP 7506753 B2 JP7506753 B2 JP 7506753B2 JP 2022545520 A JP2022545520 A JP 2022545520A JP 2022545520 A JP2022545520 A JP 2022545520A JP 7506753 B2 JP7506753 B2 JP 7506753B2
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Japan
Prior art keywords
metal
insulating film
resin layer
filled microstructure
conductors
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JP2022545520A
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Japanese (ja)
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JPWO2022044585A5 (https=
JPWO2022044585A1 (https=
Inventor
順二 川口
吉則 堀田
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Fujifilm Corp
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Fujifilm Corp
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/20—Electrolytic after-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/24—Chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/26—Anodisation of refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/34—Anodisation of metals or alloys not provided for in groups C25D11/04 - C25D11/32

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2022545520A 2020-08-24 2021-07-13 金属充填微細構造体の製造方法 Active JP7506753B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020140860 2020-08-24
JP2020140860 2020-08-24
PCT/JP2021/026287 WO2022044585A1 (ja) 2020-08-24 2021-07-13 金属充填微細構造体の製造方法

Publications (3)

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JPWO2022044585A1 JPWO2022044585A1 (https=) 2022-03-03
JPWO2022044585A5 JPWO2022044585A5 (https=) 2023-04-27
JP7506753B2 true JP7506753B2 (ja) 2024-06-26

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JP2022545520A Active JP7506753B2 (ja) 2020-08-24 2021-07-13 金属充填微細構造体の製造方法

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JP (1) JP7506753B2 (https=)
KR (1) KR102723699B1 (https=)
CN (1) CN115956144B (https=)
TW (1) TW202208695A (https=)
WO (1) WO2022044585A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021033467A1 (ja) * 2019-08-16 2021-02-25 富士フイルム株式会社 構造体の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011090865A (ja) 2009-10-22 2011-05-06 Shinko Electric Ind Co Ltd 導電フィルムおよびその製造方法、並びに半導体装置およびその製造方法
WO2017057150A1 (ja) 2015-09-29 2017-04-06 富士フイルム株式会社 金属充填微細構造体の製造方法
WO2018037805A1 (ja) 2016-08-24 2018-03-01 富士フイルム株式会社 保管方法
WO2019039071A1 (ja) 2017-08-25 2019-02-28 富士フイルム株式会社 構造体、構造体の製造方法、積層体および半導体パッケージ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019065095A1 (ja) * 2017-09-26 2019-04-04 富士フイルム株式会社 金属充填微細構造体の製造方法および絶縁性基材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011090865A (ja) 2009-10-22 2011-05-06 Shinko Electric Ind Co Ltd 導電フィルムおよびその製造方法、並びに半導体装置およびその製造方法
WO2017057150A1 (ja) 2015-09-29 2017-04-06 富士フイルム株式会社 金属充填微細構造体の製造方法
WO2018037805A1 (ja) 2016-08-24 2018-03-01 富士フイルム株式会社 保管方法
WO2019039071A1 (ja) 2017-08-25 2019-02-28 富士フイルム株式会社 構造体、構造体の製造方法、積層体および半導体パッケージ

Also Published As

Publication number Publication date
CN115956144B (zh) 2025-07-18
KR102723699B1 (ko) 2024-10-30
TW202208695A (zh) 2022-03-01
CN115956144A (zh) 2023-04-11
KR20230043153A (ko) 2023-03-30
WO2022044585A1 (ja) 2022-03-03
JPWO2022044585A1 (https=) 2022-03-03

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