JP7503777B1 - 太陽電池の製造方法及び太陽電池 - Google Patents

太陽電池の製造方法及び太陽電池 Download PDF

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JP7503777B1
JP7503777B1 JP2023146957A JP2023146957A JP7503777B1 JP 7503777 B1 JP7503777 B1 JP 7503777B1 JP 2023146957 A JP2023146957 A JP 2023146957A JP 2023146957 A JP2023146957 A JP 2023146957A JP 7503777 B1 JP7503777 B1 JP 7503777B1
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transport layer
electron transport
solar cell
layer
oxide semiconductor
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JP2025040192A (ja
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広紀 杉本
一仁 深澤
麻世 河原
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2023146957A 2023-09-11 2023-09-11 太陽電池の製造方法及び太陽電池 Active JP7503777B1 (ja)

Priority Applications (3)

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JP2023146957A JP7503777B1 (ja) 2023-09-11 2023-09-11 太陽電池の製造方法及び太陽電池
JP2024087710A JP2025040385A (ja) 2023-09-11 2024-05-30 太陽電池の製造方法及び太陽電池
PCT/JP2024/032300 WO2025057919A1 (ja) 2023-09-11 2024-09-10 太陽電池の製造方法及び太陽電池

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JP2023146957A JP7503777B1 (ja) 2023-09-11 2023-09-11 太陽電池の製造方法及び太陽電池

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WO (1) WO2025057919A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250052255A (ko) * 2023-10-11 2025-04-18 인천대학교 산학협력단 은 패시베이션 처리를 통한 태양전지 및 이의 제조방법
US12457840B1 (en) 2025-03-18 2025-10-28 Industry-Academic Cooperation Foundation, Kunsan National University 2D material-integrated halide perovskite thin-film semiconductor device and its fabrication method
US12513936B1 (en) 2025-03-18 2025-12-30 Industry-Academic Cooperation Foundation, Kunsan National University Complementary semiconductor devices using halide perovskite thin films

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010183108A (ja) 2005-09-06 2010-08-19 Canon Inc アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタ、アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法及びアモルファス酸化物膜の製造方法
CN102270740A (zh) 2010-06-04 2011-12-07 成功大学 有机光电半导体元件及其制造方法
JP2012064934A (ja) 2010-08-19 2012-03-29 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015018959A (ja) 2013-07-11 2015-01-29 出光興産株式会社 酸化物半導体及び酸化物半導体膜の製造方法
CN106549107A (zh) 2016-12-08 2017-03-29 西安电子科技大学 基于CH3NH3PbI3材料的N型双向HEMT器件及其制备方法
JP2017119805A (ja) 2015-12-28 2017-07-06 オリヱント化学工業株式会社 特定のチエノチオフェン−ベンゾジチオフェンを単位セグメントとする共役系ポリマーの製造方法
JP2017126731A (ja) 2015-06-04 2017-07-20 パナソニック株式会社 ペロブスカイト太陽電池
CN109346540A (zh) 2018-09-18 2019-02-15 浙江师范大学 氧化钼-氧化锌紫外光太阳能电池
WO2021181842A1 (ja) 2020-03-12 2021-09-16 パナソニックＩｐマネジメント株式会社 太陽電池

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JP2000285973A (ja) * 1999-03-30 2000-10-13 Toshiba Corp 光電変換素子
JP2013229506A (ja) * 2012-04-26 2013-11-07 Sharp Corp 太陽電池
JP2013236029A (ja) * 2012-05-11 2013-11-21 Fujifilm Corp 半導体素子用基板及びその製造方法、並びに半導体素子、光電変換素子、発光素子及び電子回路
CN104638108A (zh) * 2015-01-23 2015-05-20 华东师范大学 一种修饰型电子传输层及钙钛矿太阳能电池
JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
CN113314672B (zh) * 2021-06-25 2025-01-24 江苏科技大学 一种钙钛矿太阳能电池及其制备方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010183108A (ja) 2005-09-06 2010-08-19 Canon Inc アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタ、アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法及びアモルファス酸化物膜の製造方法
CN102270740A (zh) 2010-06-04 2011-12-07 成功大学 有机光电半导体元件及其制造方法
JP2012064934A (ja) 2010-08-19 2012-03-29 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015018959A (ja) 2013-07-11 2015-01-29 出光興産株式会社 酸化物半導体及び酸化物半導体膜の製造方法
JP2017126731A (ja) 2015-06-04 2017-07-20 パナソニック株式会社 ペロブスカイト太陽電池
JP2017119805A (ja) 2015-12-28 2017-07-06 オリヱント化学工業株式会社 特定のチエノチオフェン−ベンゾジチオフェンを単位セグメントとする共役系ポリマーの製造方法
CN106549107A (zh) 2016-12-08 2017-03-29 西安电子科技大学 基于CH3NH3PbI3材料的N型双向HEMT器件及其制备方法
CN109346540A (zh) 2018-09-18 2019-02-15 浙江师范大学 氧化钼-氧化锌紫外光太阳能电池
WO2021181842A1 (ja) 2020-03-12 2021-09-16 パナソニックＩｐマネジメント株式会社 太陽電池

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250052255A (ko) * 2023-10-11 2025-04-18 인천대학교 산학협력단 은 패시베이션 처리를 통한 태양전지 및 이의 제조방법
KR102803342B1 (ko) 2023-10-11 2025-05-07 인천대학교 산학협력단 은 패시베이션 처리를 통한 태양전지 및 이의 제조방법
US12457840B1 (en) 2025-03-18 2025-10-28 Industry-Academic Cooperation Foundation, Kunsan National University 2D material-integrated halide perovskite thin-film semiconductor device and its fabrication method
US12513936B1 (en) 2025-03-18 2025-12-30 Industry-Academic Cooperation Foundation, Kunsan National University Complementary semiconductor devices using halide perovskite thin films

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JP2025040192A (ja) 2025-03-24
JP2025040385A (ja) 2025-03-24

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