JP7501819B1 - 半導体光集積素子 - Google Patents

半導体光集積素子 Download PDF

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Publication number
JP7501819B1
JP7501819B1 JP2024515102A JP2024515102A JP7501819B1 JP 7501819 B1 JP7501819 B1 JP 7501819B1 JP 2024515102 A JP2024515102 A JP 2024515102A JP 2024515102 A JP2024515102 A JP 2024515102A JP 7501819 B1 JP7501819 B1 JP 7501819B1
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Prior art keywords
core layer
laser light
optical
section
integrated device
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JP2024515102A
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Japanese (ja)
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JPWO2024224495A5 (https=
JPWO2024224495A1 (https=
Inventor
崇彦 木村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2024515102A 2023-04-26 2023-04-26 半導体光集積素子 Active JP7501819B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/016374 WO2024224495A1 (ja) 2023-04-26 2023-04-26 半導体光集積素子

Publications (3)

Publication Number Publication Date
JP7501819B1 true JP7501819B1 (ja) 2024-06-18
JPWO2024224495A1 JPWO2024224495A1 (https=) 2024-10-31
JPWO2024224495A5 JPWO2024224495A5 (https=) 2025-04-02

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ID=91483412

Family Applications (1)

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JP2024515102A Active JP7501819B1 (ja) 2023-04-26 2023-04-26 半導体光集積素子

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JP (1) JP7501819B1 (https=)
CN (1) CN121039543A (https=)
WO (1) WO2024224495A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7648836B1 (ja) 2024-06-26 2025-03-18 三菱電機株式会社 光変調器集積半導体レーザ、光変調器集積半導体レーザの駆動方法、光モジュール、多値強度変調送受信装置、及び光回線終端装置
JP7802250B1 (ja) * 2025-03-13 2026-01-19 三菱電機株式会社 光変調器集積半導体レーザ及び光モジュール

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01217418A (ja) * 1988-02-26 1989-08-31 Kokusai Denshin Denwa Co Ltd <Kdd> 光変調素子
JP2002527793A (ja) * 1998-10-15 2002-08-27 テレフオンアクチーボラゲツト エル エム エリクソン 電界効果光吸収変調器とその製造法
JP2011076054A (ja) * 2009-09-02 2011-04-14 Fujikura Ltd 光学素子
US20140376577A1 (en) * 2013-02-19 2014-12-25 Mark HEIMBUCH Variable bandgap modulator for a modulated laser system
US20170179679A1 (en) * 2015-12-16 2017-06-22 Electronics And Telecommunications Research Institute Semiconductor optical device
WO2018134940A1 (ja) * 2017-01-19 2018-07-26 三菱電機株式会社 光変調器集積半導体レーザ
WO2020224775A1 (en) * 2019-05-08 2020-11-12 Huawei Technologies Co., Ltd. Compound optical device
WO2021059449A1 (ja) * 2019-09-26 2021-04-01 日本電信電話株式会社 光送信器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01217418A (ja) * 1988-02-26 1989-08-31 Kokusai Denshin Denwa Co Ltd <Kdd> 光変調素子
JP2002527793A (ja) * 1998-10-15 2002-08-27 テレフオンアクチーボラゲツト エル エム エリクソン 電界効果光吸収変調器とその製造法
JP2011076054A (ja) * 2009-09-02 2011-04-14 Fujikura Ltd 光学素子
US20140376577A1 (en) * 2013-02-19 2014-12-25 Mark HEIMBUCH Variable bandgap modulator for a modulated laser system
US20170179679A1 (en) * 2015-12-16 2017-06-22 Electronics And Telecommunications Research Institute Semiconductor optical device
WO2018134940A1 (ja) * 2017-01-19 2018-07-26 三菱電機株式会社 光変調器集積半導体レーザ
WO2020224775A1 (en) * 2019-05-08 2020-11-12 Huawei Technologies Co., Ltd. Compound optical device
WO2021059449A1 (ja) * 2019-09-26 2021-04-01 日本電信電話株式会社 光送信器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7648836B1 (ja) 2024-06-26 2025-03-18 三菱電機株式会社 光変調器集積半導体レーザ、光変調器集積半導体レーザの駆動方法、光モジュール、多値強度変調送受信装置、及び光回線終端装置
JP2026004676A (ja) * 2024-06-26 2026-01-15 三菱電機株式会社 光変調器集積半導体レーザ、光変調器集積半導体レーザの駆動方法、光モジュール、多値強度変調送受信装置、及び光回線終端装置
JP7802250B1 (ja) * 2025-03-13 2026-01-19 三菱電機株式会社 光変調器集積半導体レーザ及び光モジュール

Also Published As

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WO2024224495A1 (ja) 2024-10-31
CN121039543A (zh) 2025-11-28
JPWO2024224495A1 (https=) 2024-10-31

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