JP7498509B2 - 透明エネルギー取り込み装置 - Google Patents
透明エネルギー取り込み装置 Download PDFInfo
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- JP7498509B2 JP7498509B2 JP2022114145A JP2022114145A JP7498509B2 JP 7498509 B2 JP7498509 B2 JP 7498509B2 JP 2022114145 A JP2022114145 A JP 2022114145A JP 2022114145 A JP2022114145 A JP 2022114145A JP 7498509 B2 JP7498509 B2 JP 7498509B2
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- 238000003306 harvesting Methods 0.000 title claims description 26
- 239000000463 material Substances 0.000 claims description 66
- 238000010521 absorption reaction Methods 0.000 claims description 39
- 238000006862 quantum yield reaction Methods 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 24
- JKXWXYURKUEZHV-UHFFFAOYSA-M (2z)-1,3,3-trimethyl-2-[(2e)-7-(1,3,3-trimethylindol-1-ium-2-yl)hepta-2,4,6-trienylidene]indole;iodide Chemical compound [I-].CC1(C)C2=CC=CC=C2N(C)C1=CC=CC=CC=CC1=[N+](C)C2=CC=CC=C2C1(C)C JKXWXYURKUEZHV-UHFFFAOYSA-M 0.000 claims description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 18
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 12
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 12
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 11
- 238000009877 rendering Methods 0.000 claims description 11
- 229920002554 vinyl polymer Polymers 0.000 claims description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 10
- JXDYKVIHCLTXOP-UHFFFAOYSA-N isatin Chemical compound C1=CC=C2C(=O)C(=O)NC2=C1 JXDYKVIHCLTXOP-UHFFFAOYSA-N 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 claims description 8
- 230000004438 eyesight Effects 0.000 claims description 8
- RJTZUHVCZIGJMB-UHFFFAOYSA-N hydron;1h-indole;chloride Chemical compound Cl.C1=CC=C2NC=CC2=C1 RJTZUHVCZIGJMB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- IRPKBYJYVJOQHQ-UHFFFAOYSA-M (2e)-2-[(2e)-2-[2-chloro-3-[(e)-2-(3,3-dimethyl-1-propylindol-1-ium-2-yl)ethenyl]cyclohex-2-en-1-ylidene]ethylidene]-3,3-dimethyl-1-propylindole;iodide Chemical compound [I-].CC1(C)C2=CC=CC=C2N(CCC)\C1=C\C=C/1C(Cl)=C(\C=C/C=2C(C3=CC=CC=C3[N+]=2CCC)(C)C)CCC\1 IRPKBYJYVJOQHQ-UHFFFAOYSA-M 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 6
- 229910017817 a-Ge Inorganic materials 0.000 claims description 6
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 6
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- MXDFEUGSONIEHS-UHFFFAOYSA-M (2,5-dioxopyrrolidin-1-yl) 6-[(2e)-3,3-dimethyl-2-[(2e)-2-[3-[(e)-2-(1,3,3-trimethylindol-1-ium-2-yl)ethenyl]cyclohex-2-en-1-ylidene]ethylidene]indol-1-yl]hexanoate;chloride Chemical compound [Cl-].CC1(C)C2=CC=CC=C2[N+](C)=C1\C=C\C(CCC/1)=C\C\1=C\C=C(C(C1=CC=CC=C11)(C)C)\N1CCCCCC(=O)ON1C(=O)CCC1=O MXDFEUGSONIEHS-UHFFFAOYSA-M 0.000 claims description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 5
- ROGODJHHEBREAB-UHFFFAOYSA-N (2Z)-2-[(2E,4E,6E)-7-[1-[6-(2,5-dioxopyrrolidin-1-yl)oxy-6-oxohexyl]-3,3-dimethyl-5-sulfoindol-1-ium-2-yl]hepta-2,4,6-trienylidene]-1-ethyl-3,3-dimethylindole-5-sulfonate Chemical compound CC1(C)C2=CC(S([O-])(=O)=O)=CC=C2N(CC)\C1=C/C=C/C=C/C=C/C(C(C1=CC(=CC=C11)S(O)(=O)=O)(C)C)=[N+]1CCCCCC(=O)ON1C(=O)CCC1=O ROGODJHHEBREAB-UHFFFAOYSA-N 0.000 claims description 4
- FOVQXMYLXAXGJR-UHFFFAOYSA-N 6-[(2e)-3,3-dimethyl-2-[(2e)-2-[3-[(e)-2-(1,3,3-trimethylindol-1-ium-2-yl)ethenyl]cyclohex-2-en-1-ylidene]ethylidene]indol-1-yl]hexanoic acid;chloride Chemical compound [Cl-].CC1(C)C2=CC=CC=C2[N+](C)=C1\C=C\C(CCC/1)=C\C\1=C\C=C\1C(C)(C)C2=CC=CC=C2N/1CCCCCC(O)=O FOVQXMYLXAXGJR-UHFFFAOYSA-N 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- QPQDKHRHGUWXPD-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 6-[3,3-dimethyl-2-[2-[3-[2-(1,3,3-trimethylindol-1-ium-2-yl)ethenyl]cyclohex-2-en-1-ylidene]ethylidene]indol-1-yl]hexanoate Chemical compound CC1(C)C2=CC=CC=C2[N+](C)=C1\C=C\C(CCC/1)=C\C\1=C\C=C(C(C1=CC=CC=C11)(C)C)\N1CCCCCC(=O)ON1C(=O)CCC1=O QPQDKHRHGUWXPD-UHFFFAOYSA-N 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 51
- -1 CH 3 NH 3 PbI 3 Chemical compound 0.000 description 37
- 230000009102 absorption Effects 0.000 description 33
- 239000000975 dye Substances 0.000 description 27
- 239000000243 solution Substances 0.000 description 21
- 238000000576 coating method Methods 0.000 description 18
- 230000006870 function Effects 0.000 description 17
- 238000001228 spectrum Methods 0.000 description 17
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 15
- 230000001419 dependent effect Effects 0.000 description 15
- 238000000295 emission spectrum Methods 0.000 description 15
- 238000003491 array Methods 0.000 description 14
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 13
- 239000004926 polymethyl methacrylate Substances 0.000 description 13
- 230000009103 reabsorption Effects 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 230000004907 flux Effects 0.000 description 11
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 9
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 230000003993 interaction Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- SIKJAQJRHWYJAI-UHFFFAOYSA-O 1H-indol-1-ium Chemical compound C1=CC=C2[NH2+]C=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-O 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 5
- IJYUKSSLCNLVNM-UHFFFAOYSA-M (2z)-2-[(2z)-2-[3-[(e)-2-(3,3-dimethyl-1-propylindol-1-ium-2-yl)ethenyl]-2-phenylsulfanylcyclohex-2-en-1-ylidene]ethylidene]-3,3-dimethyl-1-propylindole;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CC1(C)C2=CC=CC=C2N(CCC)\C1=C\C=C1/CCCC(\C=C\C=2C(C3=CC=CC=C3[N+]=2CCC)(C)C)=C1SC1=CC=CC=C1 IJYUKSSLCNLVNM-UHFFFAOYSA-M 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 150000004706 metal oxides Chemical group 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 150000001450 anions Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- OYVFJKVYVDYPFV-UHFFFAOYSA-M 3-ethyl-2-[7-(3-ethyl-1,3-benzothiazol-3-ium-2-yl)hepta-2,4,6-trienylidene]-1,3-benzothiazole;iodide Chemical compound [I-].S1C2=CC=CC=C2[N+](CC)=C1/C=C/C=C/C=C/C=C1/N(CC)C2=CC=CC=C2S1 OYVFJKVYVDYPFV-UHFFFAOYSA-M 0.000 description 2
- ORRSNYROBCDCFA-UHFFFAOYSA-N 6-[(2e)-3,3-dimethyl-2-[(2e)-2-[3-[(e)-2-(1,3,3-trimethylindol-1-ium-2-yl)ethenyl]cyclohex-2-en-1-ylidene]ethylidene]indol-1-yl]-n-[2-(2,5-dioxopyrrol-1-yl)ethyl]hexanamide;chloride Chemical compound [Cl-].CC1(C)C2=CC=CC=C2[N+](C)=C1\C=C\C(CCC/1)=C\C\1=C\C=C(C(C1=CC=CC=C11)(C)C)\N1CCCCCC(=O)NCCN1C(=O)C=CC1=O ORRSNYROBCDCFA-UHFFFAOYSA-N 0.000 description 2
- XJPNHQHOCKYENG-UHFFFAOYSA-O 6-[3,3-dimethyl-2-[2-[3-[2-(1,3,3-trimethylindol-1-ium-2-yl)ethenyl]cyclohex-2-en-1-ylidene]ethylidene]indol-1-yl]-n-[2-(2,5-dioxopyrrol-1-yl)ethyl]hexanamide Chemical compound CC1(C)C2=CC=CC=C2[N+](C)=C1\C=C\C(CCC/1)=C\C\1=C\C=C(C(C1=CC=CC=C11)(C)C)\N1CCCCCC(=O)NCCN1C(=O)C=CC1=O XJPNHQHOCKYENG-UHFFFAOYSA-O 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- TVFDZZXBLUBJPY-UHFFFAOYSA-N [OH-].CC1(C)C(=CC=C2CCCC(C=CC3=[N+](CCCCS(O)(=O)=O)c4ccc(cc4C3(C)C)S(O)(=O)=O)=C2Cl)N(CCCCS(O)(=O)=O)c2ccc(cc12)S(O)(=O)=O Chemical compound [OH-].CC1(C)C(=CC=C2CCCC(C=CC3=[N+](CCCCS(O)(=O)=O)c4ccc(cc4C3(C)C)S(O)(=O)=O)=C2Cl)N(CCCCS(O)(=O)=O)c2ccc(cc12)S(O)(=O)=O TVFDZZXBLUBJPY-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000001540 azides Chemical class 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004193 piperazinyl group Chemical group 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- BQLKDRKXLYBIQR-UHFFFAOYSA-N 1h-indol-1-ium;hydroxide Chemical compound O.C1=CC=C2NC=CC2=C1 BQLKDRKXLYBIQR-UHFFFAOYSA-N 0.000 description 1
- BWSXRNWJHCIAGI-UHFFFAOYSA-N 2-[2-[3-[2-[3,3-dimethyl-5-sulfo-1-(4-sulfobutyl)indol-1-ium-2-yl]ethenyl]-2-phenylcyclohex-2-en-1-ylidene]ethylidene]-3,3-dimethyl-1-(4-sulfobutyl)indole-5-sulfonic acid hydroxide Chemical compound [OH-].CC1(C)C(=CC=C2CCCC(C=CC3=[N+](CCCCS(O)(=O)=O)c4ccc(cc4C3(C)C)S(O)(=O)=O)=C2c2ccccc2)N(CCCCS(O)(=O)=O)c2ccc(cc12)S(O)(=O)=O BWSXRNWJHCIAGI-UHFFFAOYSA-N 0.000 description 1
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- CPNBSRSROUSDIB-UHFFFAOYSA-M 54-chloro-13,26,39,52,53,55,56,57-octaza-54-aluminatetradecacyclo[25.25.3.114,25.140,51.02,11.04,9.012,53.015,24.017,22.028,37.030,35.038,55.041,50.043,48]heptapentaconta-1,3,5,7,9,11,13,15,17,19,21,23,25(57),26,28,30,32,34,36,38,40(56),41,43,45,47,49,51-heptacosaene Chemical compound N1=C(C2=CC3=CC=CC=C3C=C2C2=NC=3C4=CC5=CC=CC=C5C=C4C(=N4)N=3)N2[Al](Cl)N2C4=C(C=C3C(C=CC=C3)=C3)C3=C2N=C2C3=CC4=CC=CC=C4C=C3C1=N2 CPNBSRSROUSDIB-UHFFFAOYSA-M 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005352 borofloat Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000004456 color vision Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000023266 generation of precursor metabolites and energy Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000506 liquid--solid chromatography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000075 poly(4-vinylpyridine) Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N tetrahydrofuran Substances C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Description
本願は、2014年3月20日に出願された、米国特許出願第14/220,850号に対する優先権を主張する。上記の出願の全開示が本明細書に参照によって組み込まれる。
本願は一般に、統合された太陽光窓のための太陽光集光器、特に、透明太陽光集光器に関する。
本技術に基づいて、透明発光型太陽光集光器(TLSC)が提供される。システムは、太陽光電池アレイと、導波路と、導波路リダイレクト物質とを備える。様々な実施形態において、導波路リダイレクト物質は太陽光電池アレイと連結されている。導波路リダイレクト物質は太陽光電池アレイに組み込まれてもよい。いくつかの実施形態において、導波路リダイレクト物質は太陽光電池アレイと並列されてもよい。導波路リダイレクト物質は散乱ナノ粒子を備えていてもよい。システムは複数のアレイを備えていてもよい。
ここに示された図面は、選択された実施形態の図解のみを目的としており、全ての実行可能性を図解しておらず、本開示の範囲を限定しようとするものではない。
下記の技術の説明は、本質的に、一つ以上の発明の主題、製造物、および使用の、単なる例示に過ぎず、本適用例またはそこから発表される特許に対して優先権の主張をされ得るものとしての、本適用例またはそのような他の適用例において、主張された何れかの特定の発明の範囲、適用例、および使用を限定しようとするものではない。
〔実験〕
有機塩溶液の準備。ヨウ化2-[7-(1,3-ジヒドロ-1,3,3-トリメチル-2H-インドール-2-イリデン)-1,3,5へプタトリエンチン]-1,3,3-トリメチル-3H-インドリウム(HITCI)(エキシトン)および塩化1-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(CY)は、さらなる精製なく受け入れられるものとして特徴づけられている。光学的特徴のための溶液は、4mg/ml以上の様々な濃度において、ジクロロメタン中にそれぞれの化合物が直接溶解されることによって作成される。
2つの有望なシアニン誘導体、ヨウ化2-[7-(1,3-ジヒドロ-1,3,3-トリメチル-2H-インドール-2-イリデン)-1,3,5へプタトリエンチン]-1,3,3-トリメチル-3H-インドリウム(HITCI)(エキシトン)および塩化1-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(CY)が解析され、システムはストークスシフトの影響を調査するために使用される。CYおよびHITCI分子構造は、図7Bに示されている。発光団の吸収および放射スペクトルは図8Aに示されている。吸収スペクトルは、小さな可視光吸収とともに、CYに対しては742nm、HITCIに対しては733nmにおいて最高値をとり、NIR放射は、CYおよびHITCIそれぞれに対して、772nmおよび753nmにおいて最高値をとる。吸収と放射との間の波長の差として規定されるストークスシフトは、CYに対しては30nm、HITCIに対しては20nmである。2つの物質のストークスシフトは、組み立てられたLSCの性能の違いの実証を助け、広範囲の拡張性を予言する重要なパラメータでもある。
発光光物理学
発光団に対する個々の非照射状態は、照射率よりも大きく、中程度に低い量子収量を導く。これは実証された多くのNIR蛍光体に対して真実であり、医学の適用例および発光ダイオードの両方に対して、この波長範囲におけるQYを改善する重大な努力がなされ続けている。ここで、高い濃度における分子-分子間の相互作用によって引き起こされる励起状態(非照射)の緩和による濃度の上昇に伴って、量子収量は減少し、これらの相互作用は希薄な溶液中でさえも存在し続ける。したがって、ベア-ランバートの法則を受けて、設計された集光器は、高い量子収量および高い吸収効率の両方を維持するための、希薄濃度のより厚い層を活用する。この基準は、760nmにおけるCyに対して、高い量子収量および1.45×108Lmol-1m-1のモル吸収係数のための、5mg/Lの設計濃度と共に開始した場合に活用され、ほぼ完全なNIR吸収に対する1.0mmの最適な厚みを導く。また、再吸収損失の低減は希薄濃度のより厚い層を活用することにより実現する。
透明LSCの効率は、太陽光スペクトル吸収効率、発光団光ルミネセンス効率導波(捕捉)効率、移送(再吸収)効率、および太陽光電池素子効率によって支配される。光学的効率は、導波効率、移送効率、および発光効率を備える。発光団光ルミネセンス効率は、高い量子収量の色素の実装またはより高い量子収量を得るための色素重合体相互作用の最適化によって改善されてもよい。太陽光スペクトル吸収効率は、色素濃度の向上または混合濃度の向上によって改善されてもよい。しかし、量子収量と濃度との間にはトレードオフが存在する。太陽光電池素子効率は、より高効率の太陽光電池素子の活用によって向上されてもよい。LSCの単色放射性質のため、単一の接合PVのみがそれぞれ個別のLSCの周囲に取り付けられ、直接的にPV効率よりも低くシステム全体の効率を制限する。補完的な透明LSCが、これらそれぞれの頂部に異なる/吸収範囲とともに積層される可能性もあり、それぞれのLSCはそれらの理想的なPVと個別に連結されている。高価でない高いバンドギャップの素子(GaAsおよびGaInP)が使用可能になれば、特にここで実証されているLSCに対して、Siと比較して30%を超えるηLSCに対する効率を向上することができる。しかし、コストおよび有用性の考慮に対しては、14~16%のソーラー効率を有する、AM1.5Gを伴うより低いコストのSiPVが、ここで記載された原理の証明の実証として使用される。
結論として、選択的にNIR光子を収集する、蛍光有機塩を備えた新たな透明発光型太陽光集光装置は、設計され構成されている。0.4%±0.03%の効率とともに結合された、可視波長域において86%±1%の色づけされない透過率を有し、赤外光における光子束の大きな一部分に起因する、10%よりも高い効率の可能性を有する、第1の可視光透過NIR収集TLSCがここに実証されている。実験およびモデル化は、より大きなストークスシフトの近赤外発光団、発光団ホスト相互作用の最適化、および組み込まれた分割PVの構造の較正が、広い領域にわたって再吸収損失を低減し、システム効率を向上させることが可能であることを示す。これらの透明NIRLSCは、高い欠陥許容と処理可能性とに対する途方もなく大きい可能性を有する、透明光収集システムへの全く新しい経路を提供する。
Claims (15)
- 少なくとも1つの太陽光電池アレイと、
前記少なくとも1つの太陽光電池アレイと連結されている導波路と、を備え、
前記導波路は、ヨウ化2-[7-(1,3-ジヒドロ-1,3,3-トリメチル-2H-インドール-2-イリデン)-1,3,5へプタトリエンチン]-1,3,3-トリメチル-3H-インドリウム(HITCI);ヨウ化2-[2-[2-クロロ-3-[(1,3-ジヒドロ-3,3ジメチル-1-プロピル-2H-インドール-2イリデン)エチリデン]-1-シクロヘキセン-1-イル]エテニル]-3,3-ジメチル-1-プロピルインドリウム(IR780);塩化3-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-1,1-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,1,3-トリメチル-1H-ベンゾ[ゼ]インドール-2(3H)-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-1H-ベンゾ[ゼ]インドリウム(Cy7.5NHSエステル);塩化1-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(Cy7NHSエステル、“CY”);塩化1,1-ジメチル-3-(6-オキソ-6-(プロプ-2-イニルアミノ)ヘキシル)-2-((1E,3E,5E,)-5-(1,1,3-トリメチル-1H-ベンゾ[ゼ]インドール-2(3H)イリデン)ペンタ-1,3-ジエニル)-1H-ベンゾ[ゼ]インドリウム(Cy5.5アルキン);塩化1-(5-カルボキシペンチル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(Cy7カルボキシ酸);およびこれらの化合物から成る群から選択された導波路リダイレクト物質を含み、
前記導波路リダイレクト物質は、肉眼視で透明であり、
前記導波路リダイレクト物質は、約650nmよりも長い波長に最大の光吸収ピークを有し、約650nmよりも長い波長に最大の光放射ピークを有することによって、電磁波長域の近赤外(NIR)領域における光を選択的に収集および発光し、
前記導波路リダイレクト物質は、約20%よりも高い量子収量において光を放射するように構成され、
人間の視覚に対して透明であり、約50%よりも高い平均可視光透過率を有し、
前記少なくとも1つの太陽光電池アレイは、前記導波路の表面に配置されている、エネルギー収集システム。 - 前記導波路リダイレクト物質は、約700nmよりも長い波長に最大の光吸収ピークを有する、請求項1に記載のエネルギー収集システム。
- 前記導波路リダイレクト物質は、単一の導波路リダイレクト物質である、
請求項1又は2に記載のエネルギー収集システム。 - 前記導波路は、ポリマーに埋め込まれた前記導波路リダイレクト物質を含む請求項1又は2に記載のエネルギー収集システム。
- 前記ポリマーは、(ポリ)-メタクリル酸ブチル-co-メタクリル酸メチル(PBMMA)を含む請求項4に記載のエネルギー収集システム。
- 前記導波路リダイレクト物質は、約450nmよりも短い波長に2番目に大きい光吸収ピークを有することによって、電磁波長域の紫外(UV)領域における光をさらに収集する請求項1に記載のエネルギー収集システム。
- 前記導波路リダイレクト物質は、ヨウ化2-[7-(1,3-ジヒドロ-1,3,3-トリメチル-2H-インドール-2-イリデン)-1,3,5へプタトリエンチン]-1,3,3-トリメチル-3H-インドリウム(HITCI);塩化1-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(Cy7NHSエステル、“CY”);あるいは、これらの化合物である請求項1に記載のエネルギー収集システム。
- 少なくとも1つの太陽光電池アレイと、
前記少なくとも1つの太陽光電池アレイと連結されている導波路と、を備え、
前記導波路は、ヨウ化2-[7-(1,3-ジヒドロ-1,3,3-トリメチル-2H-インドール-2-イリデン)-1,3,5へプタトリエンチン]-1,3,3-トリメチル-3H-インドリウム(HITCI);ヨウ化2-[2-[2-クロロ-3-[(1,3-ジヒドロ-3,3ジメチル-1-プロピル-2H-インドール-2イリデン)エチリデン]-1-シクロヘキセン-1-イル]エテニル]-3,3-ジメチル-1-プロピルインドリウム(IR780);塩化3-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-1,1-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,1,3-トリメチル-1H-ベンゾ[ゼ]インドール-2(3H)-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-1H-ベンゾ[ゼ]インドリウム(Cy7.5NHSエステル);塩化1-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(Cy7NHSエステル、“CY”);塩化1,1-ジメチル-3-(6-オキソ-6-(プロプ-2-イニルアミノ)ヘキシル)-2-((1E,3E,5E,)-5-(1,1,3-トリメチル-1H-ベンゾ[ゼ]インドール-2(3H)イリデン)ペンタ-1,3-ジエニル)-1H-ベンゾ[ゼ]インドリウム(Cy5.5アルキン);塩化1-(5-カルボキシペンチル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(Cy7カルボキシ酸);およびこれらの化合物から成る群から選択された導波路リダイレクト物質を含み、
前記導波路リダイレクト物質は、肉眼視で透明であり、
前記導波路リダイレクト物質は、約650nmよりも長い波長に最大の光吸収ピークを有し、約650nmよりも長い波長に最大の光放射ピークを有することによって、電磁波長域の近赤外(NIR)領域における光を選択的に収集および発光し、
前記導波路リダイレクト物質は、約20%よりも高い量子収量において光を放射するように構成され、
人間の視覚に対して透明であり、約50%よりも高い平均可視光透過率を有し、
前記少なくとも1つの太陽光電池アレイは、前記導波路の内部に埋め込まれている、エネルギー収集システム。 - 前記少なくとも1つの太陽光電池アレイは、ゲルマニウム(Ge)、非晶質ゲルマニウム(a-Ge)、ガリウム(Ga)、ヒ化ガリウム(GaAs)、珪素(Si)、非晶質珪素(a-Si)、珪素-ゲルマニウム(SiGe)、非晶質珪素-ゲルマニウム(a-SiGe)、リン化ガリウムインジウム(GaInP)、セレン化銅インジウム、硫化銅インジウム、セレン化銅インジウムガリウム、硫化銅インジウムガリウム、テルル化カドミウム(CdTe)、ペロブスカイト(PV)、またはこれらの化合物の内、少なくとも1つを備える請求項1~8の何れか1項に記載のエネルギー収集システム。
- 前記導波路の第1表面に連結されている第1波長選択式鏡をさらに備え、
前記第1波長選択式鏡は、可視光を透過させるが、NIR光を反射する請求項1~9の何れか1項に記載のエネルギー収集システム。 - 前記導波路の第2表面に連結されている第2波長選択式鏡をさらに備え、
前記第2波長選択式鏡は、可視光を透過させるが、NIR光を反射し、
前記導波路は、前記第1波長選択式鏡および前記第2波長選択式鏡の間に位置する請求項10に記載のエネルギー収集システム。 - 前記第1波長選択式鏡は、前記第2波長選択式鏡とは異なる波長域でNIR光を反射する請求項11に記載のエネルギー収集システム。
- 前記第1波長選択式鏡は、前記第2波長選択式鏡と同一である請求項11に記載のエネルギー収集システム。
- 前記導波路への通常の入射において約85以上の演色評価数を有する、請求項1に記載のエネルギー収集システム。
- 前記導波路リダイレクト物質は、濃度が0.5mg/Lよりも薄いときに、量子収量が約20%よりも高い、請求項1に記載のエネルギー収集システム。
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Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102045092B1 (ko) * | 2011-07-01 | 2019-11-14 | 트로피글라스 테크놀로지스 엘티디 | 스펙트럼 선택 패널 |
US9985158B2 (en) | 2012-06-13 | 2018-05-29 | Massachusetts Institute Of Technology | Visibly transparent, luminescent solar concentrator |
US10439090B2 (en) * | 2012-11-09 | 2019-10-08 | Board Of Trustees Of Michigan State University | Transparent luminescent solar concentrators for integrated solar windows |
US9905765B2 (en) * | 2015-08-13 | 2018-02-27 | Florida State University Research Foundation, Inc. | Polymer-perovskite films, devices, and methods |
US9513629B1 (en) * | 2015-10-30 | 2016-12-06 | Sony Mobile Communications, Inc. | Methods and devices for heart rate controlled drones |
EP3174107A1 (fr) * | 2015-11-25 | 2017-05-31 | AGC Glass Europe | Dispositif photovoltaique |
KR101916544B1 (ko) * | 2015-12-15 | 2019-01-30 | 성균관대학교산학협력단 | 디스플레이 패널용 전기에너지 하베스터 |
FR3045597A1 (fr) * | 2015-12-22 | 2017-06-23 | Sunpartner Technologies | Vitrage dont la transparence aux infra-rouges s'adapte a la hauteur du soleil |
US20170341346A1 (en) * | 2016-05-25 | 2017-11-30 | Ubiqd, Llc | Laminated glass luminescent concentrator |
US10457148B2 (en) | 2017-02-24 | 2019-10-29 | Epic Battery Inc. | Solar car |
US10587221B2 (en) | 2017-04-03 | 2020-03-10 | Epic Battery Inc. | Modular solar battery |
CN110915001B (zh) * | 2017-05-09 | 2023-05-02 | 优比库德股份有限公司 | 用于农业应用的发光光学元件 |
IT201700102364A1 (it) * | 2017-09-13 | 2019-03-13 | Univ Degli Studi Milano Bicocca | Concentratore solare luminescente a base di perovskiti |
US20230209845A1 (en) * | 2017-12-05 | 2023-06-29 | Board Of Trustees Of Michigan State University | Enhancing the lifetime of molecular and molecular salt photovoltaics & luminescent solar concentrators |
US11362229B2 (en) | 2018-04-04 | 2022-06-14 | California Institute Of Technology | Epitaxy-free nanowire cell process for the manufacture of photovoltaics |
US20190326460A1 (en) * | 2018-04-20 | 2019-10-24 | California Institute Of Technology | Micro-Grid Luminescent Solar Concentrators and Related Methods of Manufacturing |
US11041338B2 (en) | 2018-08-21 | 2021-06-22 | California Institute Of Technology | Windows implementing effectively transparent conductors and related methods of manufacturing |
CN110896111B (zh) * | 2018-09-13 | 2021-12-28 | 中国科学院大连化学物理研究所 | 一种基于量子点-磷光有机分子杂化材料的太阳能聚光板 |
CN112888976A (zh) * | 2018-09-24 | 2021-06-01 | 密歇根州立大学董事会 | 透明发光太阳能集中器 |
US11611308B2 (en) | 2018-11-06 | 2023-03-21 | Andluca Technologies Inc. | Window inserts comprising ultraviolet-absorbing and visibly transparent photovoltaic devices producing on-board electricity |
WO2020205800A1 (en) | 2019-03-29 | 2020-10-08 | California Institute Of Technology | Apparatus and systems for incorporating effective transparent catalyst for photoelectrochemical application |
US11489082B2 (en) | 2019-07-30 | 2022-11-01 | Epic Battery Inc. | Durable solar panels |
CN113035989A (zh) * | 2019-12-06 | 2021-06-25 | 中国科学院大连化学物理研究所 | 一种基于发光聚合物的太阳能聚光板 |
EP4094297A4 (en) * | 2020-01-20 | 2024-02-21 | Board Of Trustees Of Michigan State University | POWERFUL NEAR INFRARED TRANSPARENT LUMINESCENT SOLAR CONCENTRATORS |
KR102484955B1 (ko) | 2020-04-22 | 2023-01-09 | 한국과학기술연구원 | 하향변환 나노형광체, 이의 제조방법 및 이를 이용한 발광형 태양광 집광 장치 |
KR102387997B1 (ko) | 2020-05-22 | 2022-04-20 | 한국과학기술연구원 | 형광체가 도핑된 고분자 수지를 구비한 발광형 태양 집광 장치 |
JP2022016955A (ja) * | 2020-07-13 | 2022-01-25 | 株式会社ジャパンディスプレイ | 太陽電池装置 |
US20220302876A1 (en) * | 2021-03-19 | 2022-09-22 | Frank C Pao | Photovoltaic and thermal energy system providing visible light transmission and methods of use |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001060497A (ja) | 1999-07-08 | 2001-03-06 | Internatl Business Mach Corp <Ibm> | 有機−無機ハイブリッド材料を発光層として有するエレクトロルミネセンス素子 |
WO2005073342A1 (ja) | 2004-01-29 | 2005-08-11 | Keio University | 金属酸化物系蛍光体微粒子及びその製造方法、それを利用した分散液、蛍光変換膜、金属酸化物系蛍光体微粒子の分離方法、蛍光性液体、蛍光性ペースト、蛍光体及びその製造方法並びに蛍光変換体 |
US20100147363A1 (en) | 2008-12-12 | 2010-06-17 | Industrial Technology Research Institute | Encapsulant material, crystalline silicon photovoltaic module and thin film photovoltaic module |
US20110083739A1 (en) | 2009-10-14 | 2011-04-14 | Hewlett-Packard Development Company, L.P. | Energy collection systems and methods |
JP2012044024A (ja) | 2010-08-20 | 2012-03-01 | Mitsubishi Chemicals Corp | 太陽電池モジュール |
US20130333755A1 (en) | 2012-06-13 | 2013-12-19 | The Massachusetts Institute Of Technology | Visibly Transparent, Luminescent Solar Concentrator |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4357486A (en) | 1978-03-16 | 1982-11-02 | Atlantic Richfield Company | Luminescent solar collector |
US4159212A (en) | 1978-09-18 | 1979-06-26 | Atlantic Richfield Company | Luminescent solar collector |
US4155371A (en) | 1978-09-25 | 1979-05-22 | Atlantic Richfield Company | Luminescent solar collector |
JP2001076877A (ja) | 1999-09-01 | 2001-03-23 | Nippon Telegr & Teleph Corp <Ntt> | 有機エレクトロルミネッセンス素子およびその駆動方法 |
JP4953264B2 (ja) | 2000-09-29 | 2012-06-13 | 大日本塗料株式会社 | 不可視隠し表示の識別方法 |
JP2005503453A (ja) | 2001-02-26 | 2005-02-03 | ザ・トラステイーズ・オブ・ザ・ユニバーシテイ・オブ・ペンシルベニア | 発光性多色発色団系 |
US20030110781A1 (en) * | 2001-09-13 | 2003-06-19 | Zbigniew Zurecki | Apparatus and method of cryogenic cooling for high-energy cutting operations |
WO2003068512A1 (en) * | 2002-02-11 | 2003-08-21 | Ran Yaron | Laser ink jet printer |
JP4079347B2 (ja) | 2002-03-11 | 2008-04-23 | 株式会社フジタ | 発電装置 |
JP2004252304A (ja) | 2003-02-21 | 2004-09-09 | Dainippon Toryo Co Ltd | 隠し表示を有する基材 |
WO2004084272A2 (en) | 2003-03-13 | 2004-09-30 | Eneco, Inc. | Solid state energy converter |
JP2005136531A (ja) | 2003-10-29 | 2005-05-26 | Hitachi Electronics Service Co Ltd | 透明太陽電池付携帯電話機 |
WO2006073562A2 (en) | 2004-11-17 | 2006-07-13 | Nanosys, Inc. | Photoactive devices and components with enhanced efficiency |
CN101840077B (zh) | 2005-02-16 | 2015-09-02 | 皇家飞利浦电子股份有限公司 | 发光物体及其应用 |
US7733479B2 (en) * | 2005-06-01 | 2010-06-08 | Chwen-Yang Shew | Charged carbon nanotubes for use as sensors |
DE102005043572A1 (de) | 2005-09-12 | 2007-03-15 | Basf Ag | Fluoreszenzkonversionssolarzellen auf Basis von Terrylenfluoreszenzfarbstoffen |
US20090032083A1 (en) * | 2005-09-15 | 2009-02-05 | Torrance Jerry B | Solar Collection Device |
US20070297988A1 (en) * | 2006-06-21 | 2007-12-27 | Bin Wu | Optical probes for in vivo imaging |
US20080072960A1 (en) * | 2006-09-26 | 2008-03-27 | Mi-Ra Kim | Phthalocyanine compound for solar cells |
EP2160768A4 (en) * | 2007-06-22 | 2015-07-29 | Omnipv Inc | SOLAR MODULES WITH INCREASED EFFICIENCY THROUGH THE USE OF SPECTRAL CONCENTRATORS |
WO2009011188A1 (ja) | 2007-07-18 | 2009-01-22 | Konica Minolta Medical & Graphic, Inc. | 近赤外発光蛍光体ナノ粒子、その製造方法、それを用いた生体物質標識剤 |
EP2067838B1 (en) | 2007-12-04 | 2013-04-10 | Sony Corporation | A medium for photon energy up-conversion |
US20090159801A1 (en) | 2007-12-21 | 2009-06-25 | Newport Corporation | Fluorescence optical coatings and methods for producing same |
AU2008343787B2 (en) | 2007-12-28 | 2014-01-30 | Impax Laboratories, Llc | Controlled release formulations of levodopa and uses thereof |
US20090229652A1 (en) * | 2008-01-14 | 2009-09-17 | Mapel Jonathan K | Hybrid solar concentrator |
EP2280823A4 (en) | 2008-05-15 | 2011-05-04 | 3M Innovative Properties Co | GENERATION OF COLOR PICTURES |
SG171763A1 (en) | 2008-12-02 | 2011-07-28 | Univ Central Florida | Energy conversion device |
US20100139749A1 (en) * | 2009-01-22 | 2010-06-10 | Covalent Solar, Inc. | Solar concentrators and materials for use therein |
JP2010258020A (ja) | 2009-04-21 | 2010-11-11 | Dainippon Printing Co Ltd | 太陽電池モジュールおよび太陽電池セル |
US20100288352A1 (en) | 2009-05-12 | 2010-11-18 | Lightwave Power, Inc. | Integrated solar cell nanoarray layers and light concentrating device |
US8609984B2 (en) | 2009-06-24 | 2013-12-17 | Florida State University Research Foundation, Inc. | High efficiency photovoltaic cell for solar energy harvesting |
JP5681179B2 (ja) | 2009-06-29 | 2015-03-04 | 日東電工株式会社 | 発光性アリール−ヘテロアリール化合物 |
US20110086302A1 (en) | 2009-10-09 | 2011-04-14 | Xerox Corporation | Toner compositions and processes |
TWI447918B (zh) * | 2009-10-23 | 2014-08-01 | Ind Tech Res Inst | 透明型太陽能電池 |
US20120236599A1 (en) | 2009-12-17 | 2012-09-20 | Tsuyoshi Maeda | Electronic device |
JP2013526008A (ja) | 2010-03-24 | 2013-06-20 | ユニバーシティ オブ ノース カロライナ アット シャルロット | 導波路を利用した太陽エネルギーハーベスティング |
BR112012024495B1 (pt) | 2010-03-29 | 2020-05-19 | Koninl Philips Electronics Nv | gerador de energia solar e método de fabricar um conversor luminescente |
US20130087193A1 (en) | 2010-06-15 | 2013-04-11 | Sharp Kabushiki Kaisha | Solar cell unit |
BR112013002946A2 (pt) | 2010-08-13 | 2018-07-03 | 3M Innovative Properties Co | coletor concentrador de luz natural |
EP2668680B1 (en) | 2011-01-26 | 2022-01-19 | Massachusetts Institute of Technology | Transparent photovoltaic cells |
US20130174896A1 (en) | 2011-06-30 | 2013-07-11 | California Institute Of Technology | Tandem solar cell using a silicon microwire array and amorphous silicon photovoltaic layer |
KR102045092B1 (ko) | 2011-07-01 | 2019-11-14 | 트로피글라스 테크놀로지스 엘티디 | 스펙트럼 선택 패널 |
US20130104983A1 (en) | 2011-10-31 | 2013-05-02 | The Regents Of The University Of California | Selective Reflector for Enhanced Solar Cell Efficiency |
JP5831975B2 (ja) | 2011-11-18 | 2015-12-16 | 学校法人東京理科大学 | 光発電可能な調光素子およびその製造方法 |
US10041951B2 (en) * | 2012-01-31 | 2018-08-07 | Massachusetts Institute Of Technology | Imaging probe including nanoparticle |
JP5970673B2 (ja) | 2012-03-08 | 2016-08-17 | 東洋インキScホールディングス株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
CN104272485B (zh) | 2012-05-10 | 2018-11-16 | 默克专利有限公司 | 用于电子传输层中的包含离子有机化合物的配制剂 |
GB201208793D0 (en) | 2012-05-18 | 2012-07-04 | Isis Innovation | Optoelectronic device |
EP2693503A1 (en) | 2012-08-03 | 2014-02-05 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Organo metal halide perovskite heterojunction solar cell and fabrication thereof |
JP6031657B2 (ja) | 2012-08-31 | 2016-11-24 | ペクセル・テクノロジーズ株式会社 | ペロブスカイト化合物を用いた光電変換素子およびその製造方法 |
US10439090B2 (en) | 2012-11-09 | 2019-10-08 | Board Of Trustees Of Michigan State University | Transparent luminescent solar concentrators for integrated solar windows |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001060497A (ja) | 1999-07-08 | 2001-03-06 | Internatl Business Mach Corp <Ibm> | 有機−無機ハイブリッド材料を発光層として有するエレクトロルミネセンス素子 |
WO2005073342A1 (ja) | 2004-01-29 | 2005-08-11 | Keio University | 金属酸化物系蛍光体微粒子及びその製造方法、それを利用した分散液、蛍光変換膜、金属酸化物系蛍光体微粒子の分離方法、蛍光性液体、蛍光性ペースト、蛍光体及びその製造方法並びに蛍光変換体 |
US20100147363A1 (en) | 2008-12-12 | 2010-06-17 | Industrial Technology Research Institute | Encapsulant material, crystalline silicon photovoltaic module and thin film photovoltaic module |
US20110083739A1 (en) | 2009-10-14 | 2011-04-14 | Hewlett-Packard Development Company, L.P. | Energy collection systems and methods |
JP2012044024A (ja) | 2010-08-20 | 2012-03-01 | Mitsubishi Chemicals Corp | 太陽電池モジュール |
US20130333755A1 (en) | 2012-06-13 | 2013-12-19 | The Massachusetts Institute Of Technology | Visibly Transparent, Luminescent Solar Concentrator |
Non-Patent Citations (2)
Title |
---|
RURACK, Knut et al.,Fluorescence Quantum Yields of a Series of Red and Near-Infrared Dyes Emitting at 600-1000 nm,analytical chemistry,2011年01月20日,Vol.83,pp.1232-1242 |
WURTH, Christian et al.,Integrating Sphere Setup for the Traceable Measurement of Absolute Photoluminescence Quantum Yields,analytical chemistry,2011年12月22日,Vol.84,pp.1345-1352 |
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US10510914B2 (en) | 2019-12-17 |
US20140283896A1 (en) | 2014-09-25 |
CN106133921B (zh) | 2018-04-13 |
JP6647274B2 (ja) | 2020-02-14 |
EP4224536A3 (en) | 2023-10-18 |
JP2020074429A (ja) | 2020-05-14 |
KR20160136358A (ko) | 2016-11-29 |
EP4224536A2 (en) | 2023-08-09 |
CN106133921A (zh) | 2016-11-16 |
US20200098942A1 (en) | 2020-03-26 |
KR102446383B1 (ko) | 2022-09-22 |
WO2015143038A1 (en) | 2015-09-24 |
EP3120392B1 (en) | 2022-10-19 |
EP3120392A4 (en) | 2017-12-20 |
US11688818B2 (en) | 2023-06-27 |
JP2022141807A (ja) | 2022-09-29 |
US20230282756A1 (en) | 2023-09-07 |
EP3120392A1 (en) | 2017-01-25 |
JP2017516316A (ja) | 2017-06-15 |
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