JP2022141807A - 透明エネルギー取り込み装置 - Google Patents
透明エネルギー取り込み装置 Download PDFInfo
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- JP2022141807A JP2022141807A JP2022114145A JP2022114145A JP2022141807A JP 2022141807 A JP2022141807 A JP 2022141807A JP 2022114145 A JP2022114145 A JP 2022114145A JP 2022114145 A JP2022114145 A JP 2022114145A JP 2022141807 A JP2022141807 A JP 2022141807A
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- Prior art keywords
- waveguide
- dimethyl
- ylidene
- indolium
- photovoltaic
- Prior art date
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Abstract
Description
本願は、2014年3月20日に出願された、米国特許出願第14/220,850号に対する優先権を主張する。上記の出願の全開示が本明細書に参照によって組み込まれる。
本願は一般に、統合された太陽光窓のための太陽光集光器、特に、透明太陽光集光器に関する。
本技術に基づいて、透明発光型太陽光集光器(TLSC)が提供される。システムは、太陽光電池アレイと、導波路と、導波路リダイレクト物質とを備える。様々な実施形態において、導波路リダイレクト物質は太陽光電池アレイと連結されている。導波路リダイレクト物質は太陽光電池アレイに組み込まれてもよい。いくつかの実施形態において、導波路リダイレクト物質は太陽光電池アレイと並列されてもよい。導波路リダイレクト物質は散乱ナノ粒子を備えていてもよい。システムは複数のアレイを備えていてもよい。
ここに示された図面は、選択された実施形態の図解のみを目的としており、全ての実行可能性を図解しておらず、本開示の範囲を限定しようとするものではない。
下記の技術の説明は、本質的に、一つ以上の発明の主題、製造物、および使用の、単なる例示に過ぎず、本適用例またはそこから発表される特許に対して優先権の主張をされ得るものとしての、本適用例またはそのような他の適用例において、主張された何れかの特定の発明の範囲、適用例、および使用を限定しようとするものではない。
〔実験〕
有機塩溶液の準備。ヨウ化2-[7-(1,3-ジヒドロ-1,3,3-トリメチル-2H-インドール-2-イリデン)-1,3,5へプタトリエンチン]-1,3,3-トリメチル-3H-インドリウム(HITCI)(エキシトン)および塩化1-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(CY)は、さらなる精製なく受け入れられるものとして特徴づけられている。光学的特徴のための溶液は、4mg/ml以上の様々な濃度において、ジクロロメタン中にそれぞれの化合物が直接溶解されることによって作成される。
2つの有望なシアニン誘導体、ヨウ化2-[7-(1,3-ジヒドロ-1,3,3-トリメチル-2H-インドール-2-イリデン)-1,3,5へプタトリエンチン]-1,3,3-トリメチル-3H-インドリウム(HITCI)(エキシトン)および塩化1-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(CY)が解析され、システムはストークスシフトの影響を調査するために使用される。CYおよびHITCI分子構造は、図7Bに示されている。発光団の吸収および放射スペクトルは図8Aに示されている。吸収スペクトルは、小さな可視光吸収とともに、CYに対しては742nm、HITCIに対しては733nmにおいて最高値をとり、NIR放射は、CYおよびHITCIそれぞれに対して、772nmおよび753nmにおいて最高値をとる。吸収と放射との間の波長の差として規定されるストークスシフトは、CYに対しては30nm、HITCIに対しては20nmである。2つの物質のストークスシフトは、組み立てられたLSCの性能の違いの実証を助け、広範囲の拡張性を予言する重要なパラメータでもある。
発光光物理学
発光団に対する個々の非照射状態は、照射率よりも大きく、中程度に低い量子収量を導く。これは実証された多くのNIR蛍光体に対して真実であり、医学の適用例および発光ダイオードの両方に対して、この波長範囲におけるQYを改善する重大な努力がなされ続けている。ここで、高い濃度における分子-分子間の相互作用によって引き起こされる励起状態(非照射)の緩和による濃度の上昇に伴って、量子収量は減少し、これらの相互作用は希薄な溶液中でさえも存在し続ける。したがって、ベア-ランバートの法則を受けて、設計された集光器は、高い量子収量および高い吸収効率の両方を維持するための、希薄濃度のより厚い層を活用する。この基準は、760nmにおけるCyに対して、高い量子収量および1.45×108Lmol-1m-1のモル吸収係数のための、5mg/Lの設計濃度と共に開始した場合に活用され、ほぼ完全なNIR吸収に対する1.0mmの最適な厚みを導く。また、再吸収損失の低減は希薄濃度のより厚い層を活用することにより実現する。
透明LSCの効率は、太陽光スペクトル吸収効率、発光団光ルミネセンス効率導波(捕捉)効率、移送(再吸収)効率、および太陽光電池素子効率によって支配される。光学的効率は、導波効率、移送効率、および発光効率を備える。発光団光ルミネセンス効率は、高い量子収量の色素の実装またはより高い量子収量を得るための色素重合体相互作用の最適化によって改善されてもよい。太陽光スペクトル吸収効率は、色素濃度の向上または混合濃度の向上によって改善されてもよい。しかし、量子収量と濃度との間にはトレードオフが存在する。太陽光電池素子効率は、より高効率の太陽光電池素子の活用によって向上されてもよい。LSCの単色放射性質のため、単一の接合PVのみがそれぞれ個別のLSCの周囲に取り付けられ、直接的にPV効率よりも低くシステム全体の効率を制限する。補完的な透明LSCが、これらそれぞれの頂部に異なる/吸収範囲とともに積層される可能性もあり、それぞれのLSCはそれらの理想的なPVと個別に連結されている。高価でない高いバンドギャップの素子(GaAsおよびGaInP)が使用可能になれば、特にここで実証されているLSCに対して、Siと比較して30%を超えるηLSCに対する効率を向上することができる。しかし、コストおよび有用性の考慮に対しては、14~16%のソーラー効率を有する、AM1.5Gを伴うより低いコストのSiPVが、ここで記載された原理の証明の実証として使用される。
結論として、選択的にNIR光子を収集する、蛍光有機塩を備えた新たな透明発光型太陽光集光装置は、設計され構成されている。0.4%±0.03%の効率とともに結合された、可視波長域において86%±1%の色づけされない透過率を有し、赤外光における光子束の大きな一部分に起因する、10%よりも高い効率の可能性を有する、第1の可視光透過NIR収集TLSCがここに実証されている。実験およびモデル化は、より大きなストークスシフトの近赤外発光団、発光団ホスト相互作用の最適化、および組み込まれた分割PVの構造の較正が、広い領域にわたって再吸収損失を低減し、システム効率を向上させることが可能であることを示す。これらの透明NIRLSCは、高い欠陥許容と処理可能性とに対する途方もなく大きい可能性を有する、透明光収集システムへの全く新しい経路を提供する。
Claims (18)
- 少なくとも1つの太陽光電池アレイまたは少なくとも1つの太陽光電池素子と、
前記少なくとも1つの太陽光電池アレイまたは少なくとも1つの太陽光電池素子と連結されている導波路と、を備え、
前記導波路は、ヨウ化2-[7-(1,3-ジヒドロ-1,3,3-トリメチル-2H-インドール-2-イリデン)-1,3,5へプタトリエンチン]-1,3,3-トリメチル-3H-インドリウム(HITCI);ヨウ化2-[2-[2-クロロ-3-[(1,3-ジヒドロ-3,3ジメチル-1-プロピル-2H-インドール-2イリデン)エチリデン]-1-シクロヘキセン-1-イル]エテニル]-3,3-ジメチル-1-プロピルインドリウム(IR780);塩化3-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-1,1-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,1,3-トリメチル-1H-ベンゾ[ゼ]インドール-2(3H)-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-1H-ベンゾ[ゼ]インドリウム(Cy7.5NHSエステル);塩化1-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(Cy7NHSエステル、“CY”);塩化1,1-ジメチル-3-(6-オキソ-6-(プロプ-2-イニルアミノ)ヘキシル)-2-((1E,3E,5E,)-5-(1,1,3-トリメチル-1H-ベンゾ[ゼ]インドール-2(3H)イリデン)ペンタ-1,3-ジエニル)-1H-ベンゾ[ゼ]インドリウム(Cy5.5アルキン);塩化1-(5-カルボキシペンチル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(Cy7カルボキシ酸);およびこれらの化合物から成る群から選択された導波路リダイレクト物質を含み、
前記導波路リダイレクト物質は、肉眼視で透明であり、
前記導波路リダイレクト物質は、約650nmよりも長い波長に最大の光吸収ピークを有し、約650nmよりも長い波長に最大の光放射ピークを有することによって、電磁波長域の近赤外(NIR)領域における光を選択的に収集および発光し、
前記導波路リダイレクト物質は、約20%よりも高い量子収量において光を放射するように構成され、
人間の視覚に対して透明であり、約50%よりも高い平均可視光透過率を有する、エネルギー収集システム。 - 前記導波路リダイレクト物質は、約700nmよりも長い波長に最大の光吸収ピークを有する、請求項1に記載のエネルギー収集システム。
- 前記導波路リダイレクト物質は、約800nmよりも長い波長に最大の光吸収ピークを有する、請求項2に記載のエネルギー収集システム。
- 前記導波路リダイレクト物質は、単一の導波路リダイレクト物質である、
請求項に記載のエネルギー収集システム。 - 前記導波路は、ポリマーに埋め込まれた前記導波路リダイレクト物質を含む請求項1~3の何れか1項に記載のエネルギー収集システム。
- 前記ポリマーは、(ポリ)-メタクリル酸ブチル-co-メタクリル酸メチル(PBMMA)を含む請求項5に記載のエネルギー収集システム。
- 前記導波路リダイレクト物質は、約450nmよりも短い波長に2番目に大きい光吸収ピークを有することによって、電磁波長域の紫外(UV)領域における光をさらに収集する請求項に記載のエネルギー収集システム。
- 前記導波路リダイレクト物質は、ヨウ化2-[7-(1,3-ジヒドロ-1,3,3-トリメチル-2H-インドール-2-イリデン)-1,3,5へプタトリエンチン]-1,3,3-トリメチル-3H-インドリウム(HITCI);塩化1-(6-(2,5-ジオキソピロリジン-1-イルオキシ)-6-オキソヘキシル)-3,3-ジメチル-2-((E)-2-((E)-3-((E)-2-(1,3,3-トリメチルインドリン-2-イリデン)エチリデン)シクロヘックス-1-エニル)ビニル)-3H-インドリウム(Cy7NHSエステル、“CY”);あるいは、これらの化合物である請求項1に記載のエネルギー収集システム。
- 前記少なくとも1つの太陽光電池アレイまたは少なくとも1つの太陽光電池素子は、前記少なくとも1つの太陽光電池素子を含む、請求項1~8の何れか1項に記載のエネルギー収集システム。
- 前記少なくとも1つの太陽光電池素子は、前記導波路の端部に配置されている、請求項9に記載のエネルギー収集システム。
- 前記少なくとも1つの太陽光電池アレイまたは少なくとも1つの太陽光電池素子は、前記少なくとも1つの太陽光電池アレイを含む、請求項1~8の何れか1項に記載のエネルギー収集システム。
- 前記少なくとも1つの太陽光電池アレイは、前記導波路の表面に配置されている、請求項11に記載のエネルギー収集システム。
- 前記少なくとも1つの太陽光電池アレイは、前記導波路の内部に埋め込まれている、請求項11に記載のエネルギー収集システム。
- 前記少なくとも1つの太陽光電池アレイまたは少なくとも1つの太陽光電池素子は、ゲルマニウム(Ge)、非晶質ゲルマニウム(a-Ge)、ガリウム(Ga)、ヒ化ガリウム(GaAs)、珪素(Si)、非晶質珪素(a-Si)、珪素-ゲルマニウム(SiGe)、非晶質珪素-ゲルマニウム(a-SiGe)、リン化ガリウムインジウム(GaInP)、セレン化銅インジウム、硫化銅インジウム、セレン化銅インジウムガリウム、硫化銅インジウムガリウム、テルル化カドミウム(CdTe)、ペロブスカイト(PV)、またはこれらの化合物の内、少なくとも1つを備える請求項1~13の何れか1項に記載のエネルギー収集システム。
- 前記導波路の第1表面に連結されている第1波長選択式鏡をさらに備え、
前記第1波長選択式鏡は、可視光を透過させるが、NIR光を反射する請求項1~14の何れか1項に記載のエネルギー収集システム。 - 前記導波路の第2表面に連結されている第2波長選択式鏡をさらに備え、
前記第2波長選択式鏡は、可視光を透過させるが、NIR光を反射し、
前記導波路は、前記第1波長選択式鏡および前記第2波長選択式鏡の間に位置する請求項15に記載のエネルギー収集システム。 - 前記第1波長選択式鏡は、前記第2波長選択式鏡とは異なる波長域でNIR光を反射する請求項16に記載のエネルギー収集システム。
- 前記第1波長選択式鏡は、前記第2波長選択式鏡と同一である請求項17に記載のエネルギー収集システム。
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Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PT2726920T (pt) * | 2011-07-01 | 2017-11-27 | Tropiglas Tech Ltd | Um painel concentrador de luminescência espetralmente seletivo com uma célula fotovoltaica |
US9985158B2 (en) * | 2012-06-13 | 2018-05-29 | Massachusetts Institute Of Technology | Visibly transparent, luminescent solar concentrator |
US10439090B2 (en) * | 2012-11-09 | 2019-10-08 | Board Of Trustees Of Michigan State University | Transparent luminescent solar concentrators for integrated solar windows |
US9905765B2 (en) | 2015-08-13 | 2018-02-27 | Florida State University Research Foundation, Inc. | Polymer-perovskite films, devices, and methods |
US9513629B1 (en) * | 2015-10-30 | 2016-12-06 | Sony Mobile Communications, Inc. | Methods and devices for heart rate controlled drones |
EP3174107A1 (fr) * | 2015-11-25 | 2017-05-31 | AGC Glass Europe | Dispositif photovoltaique |
KR101916544B1 (ko) * | 2015-12-15 | 2019-01-30 | 성균관대학교산학협력단 | 디스플레이 패널용 전기에너지 하베스터 |
FR3045597A1 (fr) * | 2015-12-22 | 2017-06-23 | Sunpartner Technologies | Vitrage dont la transparence aux infra-rouges s'adapte a la hauteur du soleil |
WO2017205641A1 (en) * | 2016-05-25 | 2017-11-30 | Ubiqd, Llc | Laminated glass luminescent concentrator |
US10457148B2 (en) | 2017-02-24 | 2019-10-29 | Epic Battery Inc. | Solar car |
WO2018187384A1 (en) | 2017-04-03 | 2018-10-11 | Epic Battery Inc. | Modular solar battery |
US11569402B2 (en) | 2017-05-09 | 2023-01-31 | UbiQD, Inc. | Luminescent optical elements for agricultural applications |
IT201700102364A1 (it) * | 2017-09-13 | 2019-03-13 | Univ Degli Studi Milano Bicocca | Concentratore solare luminescente a base di perovskiti |
US11362229B2 (en) | 2018-04-04 | 2022-06-14 | California Institute Of Technology | Epitaxy-free nanowire cell process for the manufacture of photovoltaics |
US20190326460A1 (en) * | 2018-04-20 | 2019-10-24 | California Institute Of Technology | Micro-Grid Luminescent Solar Concentrators and Related Methods of Manufacturing |
WO2020041522A1 (en) | 2018-08-21 | 2020-02-27 | California Institute Of Technology | Windows implementing effectively transparent conductors and related methods of manufacturing |
CN110896111B (zh) * | 2018-09-13 | 2021-12-28 | 中国科学院大连化学物理研究所 | 一种基于量子点-磷光有机分子杂化材料的太阳能聚光板 |
CN112888976A (zh) * | 2018-09-24 | 2021-06-01 | 密歇根州立大学董事会 | 透明发光太阳能集中器 |
US11611308B2 (en) | 2018-11-06 | 2023-03-21 | Andluca Technologies Inc. | Window inserts comprising ultraviolet-absorbing and visibly transparent photovoltaic devices producing on-board electricity |
WO2020205800A1 (en) | 2019-03-29 | 2020-10-08 | California Institute Of Technology | Apparatus and systems for incorporating effective transparent catalyst for photoelectrochemical application |
US11489082B2 (en) | 2019-07-30 | 2022-11-01 | Epic Battery Inc. | Durable solar panels |
CN113035989A (zh) * | 2019-12-06 | 2021-06-25 | 中国科学院大连化学物理研究所 | 一种基于发光聚合物的太阳能聚光板 |
CN115315817A (zh) * | 2020-01-20 | 2022-11-08 | 密歇根州立大学董事会 | 高性能的近红外采集透明发光太阳能聚光器 |
KR102484955B1 (ko) | 2020-04-22 | 2023-01-09 | 한국과학기술연구원 | 하향변환 나노형광체, 이의 제조방법 및 이를 이용한 발광형 태양광 집광 장치 |
KR102387997B1 (ko) | 2020-05-22 | 2022-04-20 | 한국과학기술연구원 | 형광체가 도핑된 고분자 수지를 구비한 발광형 태양 집광 장치 |
JP2022016955A (ja) * | 2020-07-13 | 2022-01-25 | 株式会社ジャパンディスプレイ | 太陽電池装置 |
US20220302876A1 (en) * | 2021-03-19 | 2022-09-22 | Frank C Pao | Photovoltaic and thermal energy system providing visible light transmission and methods of use |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100147363A1 (en) * | 2008-12-12 | 2010-06-17 | Industrial Technology Research Institute | Encapsulant material, crystalline silicon photovoltaic module and thin film photovoltaic module |
US20110083739A1 (en) * | 2009-10-14 | 2011-04-14 | Hewlett-Packard Development Company, L.P. | Energy collection systems and methods |
JP2012044024A (ja) * | 2010-08-20 | 2012-03-01 | Mitsubishi Chemicals Corp | 太陽電池モジュール |
US20130333755A1 (en) * | 2012-06-13 | 2013-12-19 | The Massachusetts Institute Of Technology | Visibly Transparent, Luminescent Solar Concentrator |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4357486A (en) | 1978-03-16 | 1982-11-02 | Atlantic Richfield Company | Luminescent solar collector |
US4159212A (en) | 1978-09-18 | 1979-06-26 | Atlantic Richfield Company | Luminescent solar collector |
US4155371A (en) | 1978-09-25 | 1979-05-22 | Atlantic Richfield Company | Luminescent solar collector |
US6420056B1 (en) | 1999-07-08 | 2002-07-16 | International Business Machines Corporation | Electroluminescent device with dye-containing organic-inorganic hybrid materials as an emitting layer |
JP2001076877A (ja) | 1999-09-01 | 2001-03-23 | Nippon Telegr & Teleph Corp <Ntt> | 有機エレクトロルミネッセンス素子およびその駆動方法 |
JP4953264B2 (ja) | 2000-09-29 | 2012-06-13 | 大日本塗料株式会社 | 不可視隠し表示の識別方法 |
CA2439060A1 (en) | 2001-02-26 | 2002-12-27 | The Trustees Of The University Of Pennsylvania | Emissive multichromophoric systems |
US20030110781A1 (en) | 2001-09-13 | 2003-06-19 | Zbigniew Zurecki | Apparatus and method of cryogenic cooling for high-energy cutting operations |
AU2003211054A1 (en) * | 2002-02-11 | 2003-09-04 | Ran Yaron | Laser ink jet printer |
JP4079347B2 (ja) | 2002-03-11 | 2008-04-23 | 株式会社フジタ | 発電装置 |
JP2004252304A (ja) | 2003-02-21 | 2004-09-09 | Dainippon Toryo Co Ltd | 隠し表示を有する基材 |
AU2004220800B2 (en) | 2003-03-13 | 2009-06-11 | Micropower Global Limited | Solid state energy converter |
JP2005136531A (ja) | 2003-10-29 | 2005-05-26 | Hitachi Electronics Service Co Ltd | 透明太陽電池付携帯電話機 |
EP1715022A4 (en) | 2004-01-29 | 2009-04-15 | Univ Keio | METAL OXIDE LIQUID MICROPARTICLES AND METHOD FOR THE PRODUCTION THEREOF, DISPERSION LIQUID THEREOF, FLUORESCENCE REVERSE TEMPERATURES, METHOD FOR SEPARATING METAL OXIDE LIGHT MATERIAL MICROPARTICLES, FLUORESCENT LIQUID, FLUORESCENT PASTE, FLUORESCENT AND METHOD FOR PRODUCING THEM; AS WELL AS FLUORESCENCE |
US20060112983A1 (en) | 2004-11-17 | 2006-06-01 | Nanosys, Inc. | Photoactive devices and components with enhanced efficiency |
AU2006214859B2 (en) | 2005-02-16 | 2011-10-06 | Philips Lighting Holding B.V. | Luminescent multilayer system and utilisation thereof |
US7733479B2 (en) * | 2005-06-01 | 2010-06-08 | Chwen-Yang Shew | Charged carbon nanotubes for use as sensors |
DE102005043572A1 (de) | 2005-09-12 | 2007-03-15 | Basf Ag | Fluoreszenzkonversionssolarzellen auf Basis von Terrylenfluoreszenzfarbstoffen |
US20090032083A1 (en) * | 2005-09-15 | 2009-02-05 | Torrance Jerry B | Solar Collection Device |
US20070297988A1 (en) * | 2006-06-21 | 2007-12-27 | Bin Wu | Optical probes for in vivo imaging |
US20080072960A1 (en) * | 2006-09-26 | 2008-03-27 | Mi-Ra Kim | Phthalocyanine compound for solar cells |
EP2160768A4 (en) | 2007-06-22 | 2015-07-29 | Omnipv Inc | SOLAR MODULES WITH INCREASED EFFICIENCY THROUGH THE USE OF SPECTRAL CONCENTRATORS |
WO2009011188A1 (ja) | 2007-07-18 | 2009-01-22 | Konica Minolta Medical & Graphic, Inc. | 近赤外発光蛍光体ナノ粒子、その製造方法、それを用いた生体物質標識剤 |
EP2067838B1 (en) | 2007-12-04 | 2013-04-10 | Sony Corporation | A medium for photon energy up-conversion |
US20090159801A1 (en) | 2007-12-21 | 2009-06-25 | Newport Corporation | Fluorescence optical coatings and methods for producing same |
KR101752080B1 (ko) | 2007-12-28 | 2017-06-28 | 임팩스 라보라토리즈, 인코포레이티드 | 레보도파 방출 제어형 제제 및 이의 용도 |
WO2009091773A2 (en) | 2008-01-14 | 2009-07-23 | Massachusetts Institute Of Technology | Solar concentrator and devices and methods using them |
WO2009140083A2 (en) | 2008-05-15 | 2009-11-19 | 3M Innovative Properties Company | Generation of color images |
JP2012510717A (ja) | 2008-12-02 | 2012-05-10 | クイック,ナサニエル,アール. | エネルギー変換装置 |
US20100139749A1 (en) * | 2009-01-22 | 2010-06-10 | Covalent Solar, Inc. | Solar concentrators and materials for use therein |
JP2010258020A (ja) | 2009-04-21 | 2010-11-11 | Dainippon Printing Co Ltd | 太陽電池モジュールおよび太陽電池セル |
US20100288352A1 (en) | 2009-05-12 | 2010-11-18 | Lightwave Power, Inc. | Integrated solar cell nanoarray layers and light concentrating device |
US8609984B2 (en) | 2009-06-24 | 2013-12-17 | Florida State University Research Foundation, Inc. | High efficiency photovoltaic cell for solar energy harvesting |
CN102648186B (zh) | 2009-06-29 | 2015-12-16 | 日东电工株式会社 | 发光芳基-杂芳基化合物 |
US20110086302A1 (en) | 2009-10-09 | 2011-04-14 | Xerox Corporation | Toner compositions and processes |
TWI447918B (zh) * | 2009-10-23 | 2014-08-01 | Ind Tech Res Inst | 透明型太陽能電池 |
US20120236599A1 (en) | 2009-12-17 | 2012-09-20 | Tsuyoshi Maeda | Electronic device |
US8463092B2 (en) | 2010-03-24 | 2013-06-11 | The University Of North Carolina At Charlotte | Waveguide assisted solar energy harvesting |
JP2013529372A (ja) | 2010-03-29 | 2013-07-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光変換器 |
CN102986036A (zh) | 2010-06-15 | 2013-03-20 | 夏普株式会社 | 太阳能电池单元 |
WO2012021471A2 (en) | 2010-08-13 | 2012-02-16 | 3M Innovative Properties Company | Concentrating daylight collector |
EP4007003A1 (en) * | 2011-01-26 | 2022-06-01 | Massachusetts Institute Of Technology | Transparent photovoltaic cells |
US20130174896A1 (en) | 2011-06-30 | 2013-07-11 | California Institute Of Technology | Tandem solar cell using a silicon microwire array and amorphous silicon photovoltaic layer |
PT2726920T (pt) | 2011-07-01 | 2017-11-27 | Tropiglas Tech Ltd | Um painel concentrador de luminescência espetralmente seletivo com uma célula fotovoltaica |
US20130104983A1 (en) | 2011-10-31 | 2013-05-02 | The Regents Of The University Of California | Selective Reflector for Enhanced Solar Cell Efficiency |
JP5831975B2 (ja) | 2011-11-18 | 2015-12-16 | 学校法人東京理科大学 | 光発電可能な調光素子およびその製造方法 |
WO2013116472A1 (en) * | 2012-01-31 | 2013-08-08 | Massachusetts Institute Of Technology | Imaging probe including nanoparticle |
JP5970673B2 (ja) | 2012-03-08 | 2016-08-17 | 東洋インキScホールディングス株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
US20150105560A1 (en) | 2012-05-10 | 2015-04-16 | Merck Patent Gmbh | Formulation comprising ionic organic compounds for use in electron transport layers |
GB201208793D0 (en) | 2012-05-18 | 2012-07-04 | Isis Innovation | Optoelectronic device |
EP2693503A1 (en) | 2012-08-03 | 2014-02-05 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Organo metal halide perovskite heterojunction solar cell and fabrication thereof |
JP6031657B2 (ja) | 2012-08-31 | 2016-11-24 | ペクセル・テクノロジーズ株式会社 | ペロブスカイト化合物を用いた光電変換素子およびその製造方法 |
US10439090B2 (en) | 2012-11-09 | 2019-10-08 | Board Of Trustees Of Michigan State University | Transparent luminescent solar concentrators for integrated solar windows |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100147363A1 (en) * | 2008-12-12 | 2010-06-17 | Industrial Technology Research Institute | Encapsulant material, crystalline silicon photovoltaic module and thin film photovoltaic module |
US20110083739A1 (en) * | 2009-10-14 | 2011-04-14 | Hewlett-Packard Development Company, L.P. | Energy collection systems and methods |
JP2012044024A (ja) * | 2010-08-20 | 2012-03-01 | Mitsubishi Chemicals Corp | 太陽電池モジュール |
US20130333755A1 (en) * | 2012-06-13 | 2013-12-19 | The Massachusetts Institute Of Technology | Visibly Transparent, Luminescent Solar Concentrator |
Non-Patent Citations (2)
Title |
---|
RURACK, KNUT ET AL.: "Fluorescence Quantum Yields of a Series of Red and Near-Infrared Dyes Emitting at 600-1000 nm", ANALYTICAL CHEMISTRY, vol. 83, JPN6021042587, 20 January 2011 (2011-01-20), pages 1232 - 1242, ISSN: 0005039677 * |
WURTH, CHRISTIAN ET AL.: "Integrating Sphere Setup for the Traceable Measurement of Absolute Photoluminescence Quantum Yields", ANALYTICAL CHEMISTRY, vol. 84, JPN6021042586, 22 December 2011 (2011-12-22), pages 1345 - 1352, ISSN: 0005039676 * |
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