JP7476987B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

Info

Publication number
JP7476987B2
JP7476987B2 JP2022576907A JP2022576907A JP7476987B2 JP 7476987 B2 JP7476987 B2 JP 7476987B2 JP 2022576907 A JP2022576907 A JP 2022576907A JP 2022576907 A JP2022576907 A JP 2022576907A JP 7476987 B2 JP7476987 B2 JP 7476987B2
Authority
JP
Japan
Prior art keywords
base plate
groove
semiconductor device
warped
convex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022576907A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022157934A1 (https=
Inventor
勝彦 近藤
太志 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2022157934A1 publication Critical patent/JPWO2022157934A1/ja
Application granted granted Critical
Publication of JP7476987B2 publication Critical patent/JP7476987B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611—Bolts or screws
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
JP2022576907A 2021-01-22 2021-01-22 半導体装置および半導体装置の製造方法 Active JP7476987B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/002281 WO2022157934A1 (ja) 2021-01-22 2021-01-22 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022157934A1 JPWO2022157934A1 (https=) 2022-07-28
JP7476987B2 true JP7476987B2 (ja) 2024-05-01

Family

ID=82549616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022576907A Active JP7476987B2 (ja) 2021-01-22 2021-01-22 半導体装置および半導体装置の製造方法

Country Status (5)

Country Link
US (1) US12424500B2 (https=)
JP (1) JP7476987B2 (https=)
CN (1) CN116711072A (https=)
DE (1) DE112021006881T5 (https=)
WO (1) WO2022157934A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116711072A (zh) * 2021-01-22 2023-09-05 三菱电机株式会社 半导体装置及半导体装置的制造方法
JP7689194B2 (ja) * 2021-10-06 2025-06-05 デンカ株式会社 放熱部材

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192708A (ja) 2009-02-18 2010-09-02 Hitachi Ltd 半導体パワーモジュール、電力変換装置、および、半導体パワーモジュールの製造方法
JP2017126681A (ja) 2016-01-15 2017-07-20 カルソニックカンセイ株式会社 半導体ユニット

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112279A (en) 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor device
JP3346657B2 (ja) 1994-09-09 2002-11-18 京セラ株式会社 半導体素子収納用パッケージ
US7117930B2 (en) * 2002-06-14 2006-10-10 Thermal Corp. Heat pipe fin stack with extruded base
JP2005033140A (ja) * 2003-07-11 2005-02-03 Nissan Motor Co Ltd 半導体装置
JP4806803B2 (ja) * 2003-10-21 2011-11-02 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
KR101077378B1 (ko) * 2010-06-23 2011-10-26 삼성전기주식회사 방열기판 및 그 제조방법
US8872332B2 (en) * 2012-04-30 2014-10-28 Infineon Technologies Ag Power module with directly attached thermally conductive structures
JP2015073012A (ja) * 2013-10-03 2015-04-16 富士電機株式会社 半導体装置
DE112015000253B4 (de) * 2014-07-18 2023-06-29 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP6406121B2 (ja) * 2015-05-14 2018-10-17 三菱電機株式会社 高周波高出力デバイス
WO2017175612A1 (ja) * 2016-04-04 2017-10-12 三菱電機株式会社 パワーモジュール、パワー半導体装置及びパワーモジュール製造方法
DE112017002999B4 (de) * 2016-06-16 2022-03-24 Mitsubishi Electric Corporation Halbleiter-montage-wärmeabführungs-basisplatte und herstellungsverfahren für dieselbe
JP6818768B2 (ja) * 2017-01-13 2021-01-20 三菱電機株式会社 金属−セラミックス接合基板及びその製造方法
US11232991B2 (en) * 2017-02-23 2022-01-25 Mitsubishi Electric Corporation Semiconductor apparatus
JP6399272B1 (ja) * 2017-09-05 2018-10-03 三菱電機株式会社 パワーモジュール及びその製造方法並びに電力変換装置
JP2019096797A (ja) * 2017-11-27 2019-06-20 三菱電機株式会社 半導体装置および電力変換装置
CN111052357B (zh) * 2018-03-20 2023-12-19 富士电机株式会社 半导体装置
DE112019007915T5 (de) * 2019-11-27 2022-09-08 Mitsubishi Electric Corporation Halbleitermodul
CN116711072A (zh) * 2021-01-22 2023-09-05 三菱电机株式会社 半导体装置及半导体装置的制造方法
JP7482815B2 (ja) * 2021-03-09 2024-05-14 三菱電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192708A (ja) 2009-02-18 2010-09-02 Hitachi Ltd 半導体パワーモジュール、電力変換装置、および、半導体パワーモジュールの製造方法
JP2017126681A (ja) 2016-01-15 2017-07-20 カルソニックカンセイ株式会社 半導体ユニット

Also Published As

Publication number Publication date
US20230352354A1 (en) 2023-11-02
WO2022157934A1 (ja) 2022-07-28
US12424500B2 (en) 2025-09-23
DE112021006881T5 (de) 2023-11-09
CN116711072A (zh) 2023-09-05
JPWO2022157934A1 (https=) 2022-07-28

Similar Documents

Publication Publication Date Title
US8258622B2 (en) Power device package and semiconductor package mold for fabricating the same
JP5900620B2 (ja) 半導体装置
JPWO2017175612A1 (ja) パワーモジュール、パワー半導体装置及びパワーモジュール製造方法
JP6323325B2 (ja) 半導体装置、半導体装置の製造方法
JP6407451B2 (ja) 半導体モジュール
JP2015073012A (ja) 半導体装置
JP6191775B2 (ja) 半導体装置
JP6699742B2 (ja) 半導体装置
JP5875467B2 (ja) 電力用半導体装置
JP2013197432A (ja) 電力用半導体装置モジュール
JP7476987B2 (ja) 半導体装置および半導体装置の製造方法
KR20070090555A (ko) 전력 소자용 패키지 및 패키지 어셈블리
US11908772B2 (en) Semiconductor module and vehicle
JP3094768B2 (ja) 半導体装置
JP7187814B2 (ja) 半導体装置
US9960126B2 (en) Semiconductor device
US12057367B2 (en) Semiconductor device and method for manufacturing the same
CN108735722B (zh) 半导体装置及半导体装置的制造方法
JP7180385B2 (ja) 半導体装置
KR102815718B1 (ko) 전력소자
JP7082506B2 (ja) 熱伝導性無機基板及び半導体装置
JP2022064488A (ja) 半導体部品
JP2022050058A (ja) 半導体装置及び半導体装置の製造方法
JP7136367B2 (ja) 半導体パッケージ
JP2022127287A (ja) 半導体モジュール

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230327

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240319

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240401

R150 Certificate of patent or registration of utility model

Ref document number: 7476987

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150