DE112021006881T5 - Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung Download PDF

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Publication number
DE112021006881T5
DE112021006881T5 DE112021006881.4T DE112021006881T DE112021006881T5 DE 112021006881 T5 DE112021006881 T5 DE 112021006881T5 DE 112021006881 T DE112021006881 T DE 112021006881T DE 112021006881 T5 DE112021006881 T5 DE 112021006881T5
Authority
DE
Germany
Prior art keywords
base plate
groove
curvature
semiconductor device
rear surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021006881.4T
Other languages
German (de)
English (en)
Inventor
Katsuhiko Kondo
Taishi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE112021006881T5 publication Critical patent/DE112021006881T5/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611—Bolts or screws
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
DE112021006881.4T 2021-01-22 2021-01-22 Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung Pending DE112021006881T5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/002281 WO2022157934A1 (ja) 2021-01-22 2021-01-22 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE112021006881T5 true DE112021006881T5 (de) 2023-11-09

Family

ID=82549616

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021006881.4T Pending DE112021006881T5 (de) 2021-01-22 2021-01-22 Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US12424500B2 (https=)
JP (1) JP7476987B2 (https=)
CN (1) CN116711072A (https=)
DE (1) DE112021006881T5 (https=)
WO (1) WO2022157934A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116711072A (zh) * 2021-01-22 2023-09-05 三菱电机株式会社 半导体装置及半导体装置的制造方法
JP7689194B2 (ja) * 2021-10-06 2025-06-05 デンカ株式会社 放熱部材

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015073012A (ja) 2013-10-03 2015-04-16 富士電機株式会社 半導体装置

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
JPS51112279A (en) 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor device
JP3346657B2 (ja) 1994-09-09 2002-11-18 京セラ株式会社 半導体素子収納用パッケージ
US7117930B2 (en) * 2002-06-14 2006-10-10 Thermal Corp. Heat pipe fin stack with extruded base
JP2005033140A (ja) * 2003-07-11 2005-02-03 Nissan Motor Co Ltd 半導体装置
JP4806803B2 (ja) * 2003-10-21 2011-11-02 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
JP4797077B2 (ja) * 2009-02-18 2011-10-19 株式会社日立製作所 半導体パワーモジュール、電力変換装置、および、半導体パワーモジュールの製造方法
KR101077378B1 (ko) * 2010-06-23 2011-10-26 삼성전기주식회사 방열기판 및 그 제조방법
US8872332B2 (en) * 2012-04-30 2014-10-28 Infineon Technologies Ag Power module with directly attached thermally conductive structures
DE112015000253B4 (de) * 2014-07-18 2023-06-29 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP6406121B2 (ja) * 2015-05-14 2018-10-17 三菱電機株式会社 高周波高出力デバイス
JP2017126681A (ja) * 2016-01-15 2017-07-20 カルソニックカンセイ株式会社 半導体ユニット
WO2017175612A1 (ja) * 2016-04-04 2017-10-12 三菱電機株式会社 パワーモジュール、パワー半導体装置及びパワーモジュール製造方法
DE112017002999B4 (de) * 2016-06-16 2022-03-24 Mitsubishi Electric Corporation Halbleiter-montage-wärmeabführungs-basisplatte und herstellungsverfahren für dieselbe
JP6818768B2 (ja) * 2017-01-13 2021-01-20 三菱電機株式会社 金属−セラミックス接合基板及びその製造方法
US11232991B2 (en) * 2017-02-23 2022-01-25 Mitsubishi Electric Corporation Semiconductor apparatus
JP6399272B1 (ja) * 2017-09-05 2018-10-03 三菱電機株式会社 パワーモジュール及びその製造方法並びに電力変換装置
JP2019096797A (ja) * 2017-11-27 2019-06-20 三菱電機株式会社 半導体装置および電力変換装置
CN111052357B (zh) * 2018-03-20 2023-12-19 富士电机株式会社 半导体装置
DE112019007915T5 (de) * 2019-11-27 2022-09-08 Mitsubishi Electric Corporation Halbleitermodul
CN116711072A (zh) * 2021-01-22 2023-09-05 三菱电机株式会社 半导体装置及半导体装置的制造方法
JP7482815B2 (ja) * 2021-03-09 2024-05-14 三菱電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015073012A (ja) 2013-10-03 2015-04-16 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20230352354A1 (en) 2023-11-02
JP7476987B2 (ja) 2024-05-01
WO2022157934A1 (ja) 2022-07-28
US12424500B2 (en) 2025-09-23
CN116711072A (zh) 2023-09-05
JPWO2022157934A1 (https=) 2022-07-28

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