JP7442456B2 - 熱電素子 - Google Patents
熱電素子 Download PDFInfo
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- JP7442456B2 JP7442456B2 JP2020553583A JP2020553583A JP7442456B2 JP 7442456 B2 JP7442456 B2 JP 7442456B2 JP 2020553583 A JP2020553583 A JP 2020553583A JP 2020553583 A JP2020553583 A JP 2020553583A JP 7442456 B2 JP7442456 B2 JP 7442456B2
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/856—Thermoelectric active materials comprising organic compositions
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
Claims (15)
- 基板、
前記基板上に配置される絶縁層、
前記絶縁層上に配置される電極、及び
前記電極上に配置される半導体構造物、を含み、
前記絶縁層は、前記電極が配置される第1凹部、及び前記第1凹部の周辺に配置される第2凹部を含み、
前記第2凹部の最小厚さは前記第1凹部の最小厚さよりも大きく、前記電極の上面と前記基板の間の垂直距離より小さい、熱電素子。 - 前記電極は、底面、前記電極の底面と対向する上面、及び前記電極の上面と前記電極の底面の間に配置される側面を含み、
前記第1凹部は、前記電極の底面と接触する第1面、及び前記電極の側面と接触する第2面を含む、請求項1に記載の熱電素子。 - 前記電極の前記側面の高さは、前記第1凹部の前記第2面の高さよりも大きい、請求項2に記載の熱電素子。
- 前記第1凹部の前記第2面の高さは、前記電極の側面の高さの0.3倍以上、0.8倍以下である、請求項3に記載の熱電素子。
- 前記半導体構造物上に配置される最上部電極、及び、
前記最上部電極上に配置される最上部基板、を含み、
前記最上部電極は、前記電極と垂直に重畳される重畳部、及び垂直に重畳されない延長部を含み、
前記半導体構造物は、前記最上部電極の前記重畳部と前記電極の間に配置される、請求項1に記載の熱電素子。 - 前記最上部電極の延長部は、前記第2凹部と垂直に重畳される、請求項5に記載の熱電素子。
- 前記絶縁層は、無機充填剤、及び高分子樹脂を含む、請求項1に記載の熱電素子。
- 前記第1凹部の上面及び前記第2凹部の上面は、前記基板に向けて凹む、請求項1に記載の熱電素子。
- 前記第2凹部は、前記電極の側面に沿って配置される、請求項2に記載の熱電素子。
- 前記電極は、互いに離隔される複数の第1電極を含み、前記第2凹部は、前記複数の第1電極のそれぞれの間に配置される、請求項9に記載の熱電素子。
- 基板、
前記基板上に配置される絶縁層、
前記絶縁層上に配置される電極、及び
前記電極上に配置される半導体構造物、を含み、
前記絶縁層は、前記電極が配置される第1領域、及び前記第1領域の周りに配置される第2領域を含み、
前記第1領域の上面及び前記第2領域の上面は、前記基板に向けて凹んでおり、
前記第2領域の最小厚さは前記第1領域の最小厚さよりも大きく、前記電極の上面と前記基板の間の垂直距離より小さい、熱電素子。 - 前記電極は、底面、前記底面と対向する上面、及び前記上面と前記底面の間に配置される側面を含む、請求項11に記載の熱電素子。
- 前記第1領域の前記上面は、前記電極の前記底面に接触する第1表面、及び前記電極の前記側面に接触する第2表面を含み、
前記第2表面の高さは、前記電極の前記側面の高さの0.3倍以上、0.8倍以下である、請求項12に記載の熱電素子。 - 前記絶縁層は、無機充填剤、及び高分子樹脂を含み、
前記絶縁層の厚さは、20μm~200μmである、請求項11に記載の熱電素子。 - 基板、
前記基板上に配置される絶縁層、
前記絶縁層上に配置される電極、及び
前記電極上に配置される半導体構造物、を含み、
前記絶縁層は、前記電極が配置される第1領域、及び前記第1領域の周りに配置される第2領域を含み、
前記絶縁層の前記第2領域の上面は、前記基板に向けて凹んでおり、
前記第2領域の最小厚さは前記第1領域の最小厚さよりも大きく、前記電極の上面と前記基板の間の垂直距離より小さい、熱電素子。
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KR10-2019-0036097 | 2019-03-28 | ||
PCT/KR2019/003878 WO2019194539A1 (ko) | 2018-04-04 | 2019-04-02 | 열전소자 |
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CN (4) | CN112041996B (ja) |
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KR20210122606A (ko) * | 2020-04-01 | 2021-10-12 | 엘지이노텍 주식회사 | 열전 소자 |
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KR20220013223A (ko) * | 2020-07-24 | 2022-02-04 | 엘지이노텍 주식회사 | 열전 소자 |
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KR102473032B1 (ko) | 2021-01-18 | 2022-12-01 | 전주대학교 산학협력단 | 열전소자 유닛 |
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EP3764410B1 (en) | 2023-11-08 |
KR102596839B9 (ko) | 2024-02-08 |
CN117460387A (zh) | 2024-01-26 |
CN112041996A (zh) | 2020-12-04 |
KR20190116066A (ko) | 2019-10-14 |
EP4277454A2 (en) | 2023-11-15 |
KR20220057508A (ko) | 2022-05-09 |
CN112041996B (zh) | 2023-11-24 |
KR102392651B1 (ko) | 2022-05-02 |
KR102596839B1 (ko) | 2023-11-02 |
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