JP7407718B2 - 熱電モジュール - Google Patents
熱電モジュール Download PDFInfo
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- JP7407718B2 JP7407718B2 JP2020540623A JP2020540623A JP7407718B2 JP 7407718 B2 JP7407718 B2 JP 7407718B2 JP 2020540623 A JP2020540623 A JP 2020540623A JP 2020540623 A JP2020540623 A JP 2020540623A JP 7407718 B2 JP7407718 B2 JP 7407718B2
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
Description
Claims (20)
- 第1基板;
前記第1基板上に配置された第1樹脂層;
前記第1樹脂層上に配置された第2樹脂層;
前記第2樹脂層上に配置された第1電極;
前記第1電極上に配置された半導体構造物;および
前記半導体構造物上に配置された第2基板を含み、
前記第2樹脂層は前記第1電極が配置されたリセスを含み、
前記リセスは前記第1樹脂層と離隔した底面を含み、
前記第1電極の厚は前記リセスの深さより大きい、熱電素子。 - 前記第2樹脂層は前記リセスの底面と前記第1樹脂層間に配置された第1領域、および前記リセスの周囲に配置された第2領域を含み、
前記第2領域の少なくとも一部の厚さは前記第1領域の厚さより大きい、請求項1に記載の熱電素子。 - 前記第1基板の幅は前記第2樹脂層の幅より大きい、請求項1に記載の熱電素子。
- 前記第2樹脂層は前記第1電極から遠くなるほど厚さが減少する領域を含む、請求項2に記載の熱電素子。
- 前記第1樹脂層の幅は前記第2樹脂層の幅より小さい、請求項3に記載の熱電素子。
- 前記第1基板、および前記第2基板は金属物質を含み、
前記第1樹脂層は前記第2樹脂層に含まれた物質と異なる物質を含む、請求項1に記載の熱電素子。 - 前記第2樹脂層はシリコン樹脂および無機充填材を含む、請求項6に記載の熱電素子。
- 前記第1電極は互いに向かい合う上面と下面、および前記上面と前記下面の間に配置された側面を含み、
前記第1電極の側面は前記第2樹脂層と接触する接触面を含み、
前記第1電極の接触面の厚さは前記第1電極の厚さの0.1倍~0.9倍である、請求項1に記載の熱電素子。 - 前記第1電極の下面は前記第2樹脂層のリセスの底面と接触し、
前記第1電極の側面は前記第2樹脂層と接触しない非接触面をさらに含む、請求項8に記載の熱電素子。 - 前記第2樹脂層の厚さは前記第1樹脂層の厚さの0.001倍~1倍である、請求項8に記載の熱電素子。
- 請求項1~請求項10のいずれか一項に記載された熱電素子を含む、発電装置。
- 前記第1樹脂層はエポキシ樹脂および無機充填材を含む、請求項1に記載の熱電素子。
- 第1基板;
前記第1基板上に配置された第1樹脂層;
前記第1樹脂層上に配置され、リセスを含む第2樹脂層;
前記第2樹脂層のリセスに配置される第1電極;
前記第1電極上に配置される半導体構造物;
前記半導体構造物上に配置される第2電極;および
前記第2電極上に配置される第2基板を含み、
前記第2樹脂層は前記リセスの底面と前記第1樹脂層間の第1領域および前記第1電極の側面と接触する第2領域を含み、
前記第1電極の前記側面は接触面および非接触面を含み、
前記接触面は前記第2樹脂層の第2領域と接触し、
前記非接触面は前記第2樹脂層と接触しない、熱電素子。 - 前記第2樹脂層の前記第2領域は前記第2樹脂層の前記第1領域の周辺領域に配置され、
前記第2樹脂層の前記第2領域は前記第1樹脂層と接触する、請求項13に記載の熱電素子。 - 前記第1樹脂層の組成は前記第2樹脂層の組成と異なり、
前記第2樹脂層は前記第1電極から遠くなるほど厚さが薄くなる領域を含む、請求項13に記載の熱電素子。 - 前記第1基板の幅は前記第2樹脂層の幅より大きく、
前記第1樹脂層の幅は前記第2樹脂層の幅より小さい、請求項13に記載の熱電素子。 - 前記第2樹脂層の前記第2領域の最上面と前記第1樹脂層との垂直距離は前記リセスの深さより大きい、請求項14に記載の熱電素子。
- 前記第1電極は前記第1電極の上面と向かい合い前記リセスの底面と接触する下面、および前記上面と前記下面の間に配置された前記側面を含み、
前記第1電極の接触面の高さは前記第1電極の厚さの0.2倍~0.8倍であり
前記第2樹脂層の厚さは前記第1樹脂層の厚さの0.001倍~1倍である、請求項13に記載の熱電素子。 - 前記第1基板、および前記第2基板は金属物質を含み、
前記第2樹脂層はシリコン樹脂および無機充填材を含む、請求項13に記載の熱電素子。 - 前記第1樹脂層はエポキシ樹脂および無機充填材を含む、請求項19に記載の熱電素子。
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KR1020180008421A KR102055428B1 (ko) | 2018-01-23 | 2018-01-23 | 열전소자 |
KR10-2018-0008421 | 2018-01-23 | ||
KR10-2018-0014198 | 2018-02-05 | ||
KR1020180014198A KR102433959B1 (ko) | 2018-02-05 | 2018-02-05 | 열전 모듈 |
PCT/KR2019/000894 WO2019146991A1 (ko) | 2018-01-23 | 2019-01-22 | 열전 모듈 |
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US (2) | US11730056B2 (ja) |
EP (1) | EP3745480A4 (ja) |
JP (2) | JP7407718B2 (ja) |
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WO (1) | WO2019146991A1 (ja) |
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US11107962B2 (en) * | 2018-12-18 | 2021-08-31 | Soulnano Limited | UV LED array with power interconnect and heat sink |
KR20210088980A (ko) * | 2020-01-07 | 2021-07-15 | 엘지이노텍 주식회사 | 열전소자 |
CN114319071A (zh) * | 2022-02-25 | 2022-04-12 | 鸿海精密工业股份有限公司 | 浮桥结构及红外线感测装置 |
WO2023206116A1 (zh) * | 2022-04-27 | 2023-11-02 | 京东方科技集团股份有限公司 | 微流控芯片和反应系统 |
Citations (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000101152A (ja) | 1998-09-24 | 2000-04-07 | Citizen Watch Co Ltd | 熱電素子 |
JP2000214934A (ja) | 1998-11-18 | 2000-08-04 | Komatsu Ltd | 温度調節器及びその製造方法 |
KR200206613Y1 (ko) | 2000-07-24 | 2000-12-01 | 주식회사써모텍 | 열전 반도체 냉각모듈 |
JP2002054855A (ja) | 2000-08-09 | 2002-02-20 | Aisin Seiki Co Ltd | 温調装置 |
JP2004079883A (ja) | 2002-08-21 | 2004-03-11 | Citizen Watch Co Ltd | 熱電素子 |
JP2004140064A (ja) | 2002-10-16 | 2004-05-13 | Citizen Watch Co Ltd | 熱電素子およびその製造方法 |
JP2004311819A (ja) | 2003-04-09 | 2004-11-04 | Idemitsu Kosan Co Ltd | 熱電変換モジュール |
JP2005217353A (ja) | 2004-02-02 | 2005-08-11 | Yokohama Teikoki Kk | 熱電半導体素子、熱電変換モジュールおよびその製造方法 |
JP2005340565A (ja) | 2004-04-27 | 2005-12-08 | Kyocera Corp | 熱電交換モジュール用セラミック基板 |
JP2006073632A (ja) | 2004-08-31 | 2006-03-16 | Toshiba Corp | 熱電変換装置および熱電変換装置の製造方法 |
JP2006269572A (ja) | 2005-03-23 | 2006-10-05 | Seiko Instruments Inc | 熱電変換モジュール、回路基板及び熱電変換モジュールの製造方法 |
JP2007035974A (ja) | 2005-07-27 | 2007-02-08 | Aisin Seiki Co Ltd | 熱電変換装置 |
JP2008066374A (ja) | 2006-09-05 | 2008-03-21 | Mitsubishi Electric Corp | 放熱性基板およびその製造方法ならびにこれを用いたパワーモジュール |
JP2008124067A (ja) | 2006-11-08 | 2008-05-29 | Mitsubishi Electric Corp | 熱伝導性基板およびこれを用いるパワーモジュール |
JP2009105305A (ja) | 2007-10-25 | 2009-05-14 | Yamaha Corp | 熱電モジュール |
JP2010067947A (ja) | 2008-09-09 | 2010-03-25 | Samsung Electro-Mechanics Co Ltd | 印刷回路基板及びその製造方法 |
JP2012195441A (ja) | 2011-03-16 | 2012-10-11 | Hitachi Powdered Metals Co Ltd | 熱電変換システムおよびその製造方法 |
JP2013026617A (ja) | 2011-07-15 | 2013-02-04 | Samsung Electro-Mechanics Co Ltd | 熱電モジュール |
US20130081663A1 (en) | 2011-09-29 | 2013-04-04 | Samsung Electro-Mechanics Co., Ltd. | Thermoelectric module |
US20140230875A1 (en) | 2013-02-20 | 2014-08-21 | MAHLE Behr GmbH & Co. KG | Thermoelectric module |
WO2014199541A1 (ja) | 2013-06-11 | 2014-12-18 | パナソニックIpマネジメント株式会社 | 熱電変換モジュール |
US20150194589A1 (en) | 2014-01-08 | 2015-07-09 | Lg Innotek Co., Ltd. | Thermoelectric module and heat conversion device using the same |
JP2016092027A (ja) | 2014-10-29 | 2016-05-23 | 京セラ株式会社 | 熱電モジュール |
JP2016119450A (ja) | 2014-12-23 | 2016-06-30 | 財團法人工業技術研究院Industrial Technology Research Institute | 熱電変換デバイス及びその応用システム |
JP2017098282A (ja) | 2015-11-18 | 2017-06-01 | 日東電工株式会社 | 半導体装置の製造方法 |
JP2017163033A (ja) | 2016-03-10 | 2017-09-14 | 株式会社アツミテック | 熱電変換モジュール |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6291462U (ja) * | 1985-11-28 | 1987-06-11 | ||
JPH03196583A (ja) * | 1989-03-24 | 1991-08-28 | Nippon Steel Corp | 縦型シリコンサーモパイル及びその製造方法 |
JP3369349B2 (ja) * | 1995-03-02 | 2003-01-20 | 株式会社エコ・トゥエンティーワン | 熱電変換装置 |
US6347521B1 (en) * | 1999-10-13 | 2002-02-19 | Komatsu Ltd | Temperature control device and method for manufacturing the same |
JP2003046147A (ja) * | 2001-08-02 | 2003-02-14 | Matsushita Refrig Co Ltd | 熱電素子モジュール及びその製造方法 |
JP2004014995A (ja) * | 2002-06-11 | 2004-01-15 | Aisin Seiki Co Ltd | 熱電変換モジュールおよびその製造方法 |
KR20090120437A (ko) * | 2009-09-04 | 2009-11-24 | 주식회사 씨앤엘 | 열전달부재를 구비한 열전모듈 |
EP2381498A1 (en) * | 2010-04-20 | 2011-10-26 | Mondragon Componentes, S. Coop. | Method for manufacturing a thermoelectric module, and thermoelectric module |
JP5733678B2 (ja) * | 2010-12-24 | 2015-06-10 | 日立化成株式会社 | 熱電変換モジュールおよびその製造方法 |
CN102810626A (zh) * | 2011-06-03 | 2012-12-05 | 清华大学 | 一种基于精密机械加工的微型热电器件制作方法 |
KR102339579B1 (ko) * | 2015-04-24 | 2021-12-15 | 엘지이노텍 주식회사 | 열전모듈 |
KR101998829B1 (ko) * | 2015-12-03 | 2019-07-10 | 주식회사 엘지화학 | 마운팅 부재 및 이를 이용한 열전 모듈 시스템 |
KR101875902B1 (ko) * | 2016-05-13 | 2018-07-06 | 티엠에스테크 주식회사 | 열전소자 및 열전소자 제조 방법 |
-
2019
- 2019-01-22 JP JP2020540623A patent/JP7407718B2/ja active Active
- 2019-01-22 EP EP19743874.0A patent/EP3745480A4/en active Pending
- 2019-01-22 CN CN201980009763.3A patent/CN111656546B/zh active Active
- 2019-01-22 WO PCT/KR2019/000894 patent/WO2019146991A1/ko unknown
- 2019-01-22 US US16/963,663 patent/US11730056B2/en active Active
-
2023
- 2023-06-23 US US18/213,314 patent/US20230337540A1/en active Pending
- 2023-12-19 JP JP2023213561A patent/JP2024029018A/ja active Pending
Patent Citations (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000101152A (ja) | 1998-09-24 | 2000-04-07 | Citizen Watch Co Ltd | 熱電素子 |
JP2000214934A (ja) | 1998-11-18 | 2000-08-04 | Komatsu Ltd | 温度調節器及びその製造方法 |
KR200206613Y1 (ko) | 2000-07-24 | 2000-12-01 | 주식회사써모텍 | 열전 반도체 냉각모듈 |
JP2002054855A (ja) | 2000-08-09 | 2002-02-20 | Aisin Seiki Co Ltd | 温調装置 |
JP2004079883A (ja) | 2002-08-21 | 2004-03-11 | Citizen Watch Co Ltd | 熱電素子 |
JP2004140064A (ja) | 2002-10-16 | 2004-05-13 | Citizen Watch Co Ltd | 熱電素子およびその製造方法 |
JP2004311819A (ja) | 2003-04-09 | 2004-11-04 | Idemitsu Kosan Co Ltd | 熱電変換モジュール |
JP2005217353A (ja) | 2004-02-02 | 2005-08-11 | Yokohama Teikoki Kk | 熱電半導体素子、熱電変換モジュールおよびその製造方法 |
JP2005340565A (ja) | 2004-04-27 | 2005-12-08 | Kyocera Corp | 熱電交換モジュール用セラミック基板 |
JP2006073632A (ja) | 2004-08-31 | 2006-03-16 | Toshiba Corp | 熱電変換装置および熱電変換装置の製造方法 |
JP2006269572A (ja) | 2005-03-23 | 2006-10-05 | Seiko Instruments Inc | 熱電変換モジュール、回路基板及び熱電変換モジュールの製造方法 |
JP2007035974A (ja) | 2005-07-27 | 2007-02-08 | Aisin Seiki Co Ltd | 熱電変換装置 |
JP2008066374A (ja) | 2006-09-05 | 2008-03-21 | Mitsubishi Electric Corp | 放熱性基板およびその製造方法ならびにこれを用いたパワーモジュール |
JP2008124067A (ja) | 2006-11-08 | 2008-05-29 | Mitsubishi Electric Corp | 熱伝導性基板およびこれを用いるパワーモジュール |
JP2009105305A (ja) | 2007-10-25 | 2009-05-14 | Yamaha Corp | 熱電モジュール |
JP2010067947A (ja) | 2008-09-09 | 2010-03-25 | Samsung Electro-Mechanics Co Ltd | 印刷回路基板及びその製造方法 |
JP2012195441A (ja) | 2011-03-16 | 2012-10-11 | Hitachi Powdered Metals Co Ltd | 熱電変換システムおよびその製造方法 |
JP2013026617A (ja) | 2011-07-15 | 2013-02-04 | Samsung Electro-Mechanics Co Ltd | 熱電モジュール |
US20130081663A1 (en) | 2011-09-29 | 2013-04-04 | Samsung Electro-Mechanics Co., Ltd. | Thermoelectric module |
US20140230875A1 (en) | 2013-02-20 | 2014-08-21 | MAHLE Behr GmbH & Co. KG | Thermoelectric module |
WO2014199541A1 (ja) | 2013-06-11 | 2014-12-18 | パナソニックIpマネジメント株式会社 | 熱電変換モジュール |
US20150194589A1 (en) | 2014-01-08 | 2015-07-09 | Lg Innotek Co., Ltd. | Thermoelectric module and heat conversion device using the same |
JP2016092027A (ja) | 2014-10-29 | 2016-05-23 | 京セラ株式会社 | 熱電モジュール |
JP2016119450A (ja) | 2014-12-23 | 2016-06-30 | 財團法人工業技術研究院Industrial Technology Research Institute | 熱電変換デバイス及びその応用システム |
JP2017098282A (ja) | 2015-11-18 | 2017-06-01 | 日東電工株式会社 | 半導体装置の製造方法 |
JP2017163033A (ja) | 2016-03-10 | 2017-09-14 | 株式会社アツミテック | 熱電変換モジュール |
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CN111656546A (zh) | 2020-09-11 |
US20210083165A1 (en) | 2021-03-18 |
JP2024029018A (ja) | 2024-03-05 |
CN111656546B (zh) | 2024-04-16 |
WO2019146991A1 (ko) | 2019-08-01 |
EP3745480A1 (en) | 2020-12-02 |
US11730056B2 (en) | 2023-08-15 |
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