JP7430704B2 - 仮固定基板、複合基板および電子部品の剥離方法 - Google Patents
仮固定基板、複合基板および電子部品の剥離方法 Download PDFInfo
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- JP7430704B2 JP7430704B2 JP2021509045A JP2021509045A JP7430704B2 JP 7430704 B2 JP7430704 B2 JP 7430704B2 JP 2021509045 A JP2021509045 A JP 2021509045A JP 2021509045 A JP2021509045 A JP 2021509045A JP 7430704 B2 JP7430704 B2 JP 7430704B2
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- 239000010703 silicon Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 238000010304 firing Methods 0.000 description 11
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019054441 | 2019-03-22 | ||
JP2019054441 | 2019-03-22 | ||
PCT/JP2020/011046 WO2020195932A1 (fr) | 2019-03-22 | 2020-03-13 | Substrat de fixation provisoire, substrat composite et procédé de décollement de composant électronique |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020195932A1 JPWO2020195932A1 (fr) | 2020-10-01 |
JP7430704B2 true JP7430704B2 (ja) | 2024-02-13 |
Family
ID=72610531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021509045A Active JP7430704B2 (ja) | 2019-03-22 | 2020-03-13 | 仮固定基板、複合基板および電子部品の剥離方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7430704B2 (fr) |
CN (1) | CN113544819B (fr) |
TW (1) | TWI815002B (fr) |
WO (1) | WO2020195932A1 (fr) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007251080A (ja) | 2006-03-20 | 2007-09-27 | Fujifilm Corp | プラスチック基板の固定方法、回路基板およびその製造方法 |
JP2013247280A (ja) | 2012-05-28 | 2013-12-09 | Tokyo Electron Ltd | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
JP2015228483A (ja) | 2014-05-08 | 2015-12-17 | 東京応化工業株式会社 | 支持体分離方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3769584B2 (ja) * | 2004-07-09 | 2006-04-26 | 積水化学工業株式会社 | 基材処理装置及び方法 |
JP2009290206A (ja) * | 2008-05-01 | 2009-12-10 | Dainippon Printing Co Ltd | 露光装置用瞳フィルタ、回折光学素子及びそれを備えた露光装置 |
JP5304112B2 (ja) * | 2008-09-01 | 2013-10-02 | 日本電気硝子株式会社 | 薄膜付きガラス基板の製造方法 |
JP2012015150A (ja) * | 2010-06-29 | 2012-01-19 | Ushio Inc | レーザリフトオフ方法及びレーザリフトオフ装置 |
CN104365019B (zh) * | 2012-06-13 | 2017-08-25 | 日本碍子株式会社 | 复合基板 |
JP6007688B2 (ja) * | 2012-09-11 | 2016-10-12 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6190671B2 (ja) * | 2013-09-05 | 2017-08-30 | 古河電気工業株式会社 | ダイシング用粘着テープおよび半導体装置の製造方法 |
JP6196859B2 (ja) * | 2013-09-18 | 2017-09-13 | クアーズテック株式会社 | ウエハ搭載用部材 |
CN105074870B (zh) * | 2013-12-25 | 2016-12-07 | 日本碍子株式会社 | 操作基板、半导体用复合基板、半导体电路基板及其制造方法 |
JP6425606B2 (ja) * | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | ウエーハの生成方法 |
JP6450634B2 (ja) * | 2015-04-13 | 2019-01-09 | 株式会社ディスコ | テープ剥離装置 |
JP2017041391A (ja) * | 2015-08-21 | 2017-02-23 | 旭硝子株式会社 | 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法 |
JP6202696B2 (ja) * | 2016-08-30 | 2017-09-27 | 国立大学法人埼玉大学 | 単結晶基板製造方法 |
JP2018117060A (ja) * | 2017-01-19 | 2018-07-26 | 株式会社ブイ・テクノロジー | 剥離基板及びレーザリフトオフ方法 |
-
2020
- 2020-03-13 CN CN202080019256.0A patent/CN113544819B/zh active Active
- 2020-03-13 WO PCT/JP2020/011046 patent/WO2020195932A1/fr active Application Filing
- 2020-03-13 JP JP2021509045A patent/JP7430704B2/ja active Active
- 2020-03-17 TW TW109108738A patent/TWI815002B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007251080A (ja) | 2006-03-20 | 2007-09-27 | Fujifilm Corp | プラスチック基板の固定方法、回路基板およびその製造方法 |
JP2013247280A (ja) | 2012-05-28 | 2013-12-09 | Tokyo Electron Ltd | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
JP2015228483A (ja) | 2014-05-08 | 2015-12-17 | 東京応化工業株式会社 | 支持体分離方法 |
Also Published As
Publication number | Publication date |
---|---|
CN113544819A (zh) | 2021-10-22 |
TW202103217A (zh) | 2021-01-16 |
JPWO2020195932A1 (fr) | 2020-10-01 |
TWI815002B (zh) | 2023-09-11 |
CN113544819B (zh) | 2024-01-05 |
WO2020195932A1 (fr) | 2020-10-01 |
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