TWI815002B - 暫時固定基板、複合基板及電子構件的剝離方法 - Google Patents

暫時固定基板、複合基板及電子構件的剝離方法 Download PDF

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Publication number
TWI815002B
TWI815002B TW109108738A TW109108738A TWI815002B TW I815002 B TWI815002 B TW I815002B TW 109108738 A TW109108738 A TW 109108738A TW 109108738 A TW109108738 A TW 109108738A TW I815002 B TWI815002 B TW I815002B
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TW
Taiwan
Prior art keywords
temporarily fixed
substrate
fixed substrate
light transmittance
temporarily
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TW109108738A
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English (en)
Chinese (zh)
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TW202103217A (zh
Inventor
野村勝
宮澤杉夫
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日商日本碍子股份有限公司
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Publication of TW202103217A publication Critical patent/TW202103217A/zh
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Publication of TWI815002B publication Critical patent/TWI815002B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Ceramic Capacitors (AREA)
TW109108738A 2019-03-22 2020-03-17 暫時固定基板、複合基板及電子構件的剝離方法 TWI815002B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019054441 2019-03-22
JP2019-054441 2019-03-22

Publications (2)

Publication Number Publication Date
TW202103217A TW202103217A (zh) 2021-01-16
TWI815002B true TWI815002B (zh) 2023-09-11

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TW109108738A TWI815002B (zh) 2019-03-22 2020-03-17 暫時固定基板、複合基板及電子構件的剝離方法

Country Status (4)

Country Link
JP (1) JP7430704B2 (fr)
CN (1) CN113544819B (fr)
TW (1) TWI815002B (fr)
WO (1) WO2020195932A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024195503A1 (fr) * 2023-03-17 2024-09-26 日本碍子株式会社 Substrat de fixation temporaire et procédé de fabrication de substrat temporairement fixe

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201216333A (en) * 2010-06-29 2012-04-16 Ushio Electric Inc Laser lift-off method and laser lift-off apparatus
JP2014056863A (ja) * 2012-09-11 2014-03-27 Fuji Electric Co Ltd 半導体装置の製造方法
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3769584B2 (ja) * 2004-07-09 2006-04-26 積水化学工業株式会社 基材処理装置及び方法
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法
JP2009290206A (ja) * 2008-05-01 2009-12-10 Dainippon Printing Co Ltd 露光装置用瞳フィルタ、回折光学素子及びそれを備えた露光装置
JP5304112B2 (ja) * 2008-09-01 2013-10-02 日本電気硝子株式会社 薄膜付きガラス基板の製造方法
JP5869960B2 (ja) 2012-05-28 2016-02-24 東京エレクトロン株式会社 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
EP2863545B1 (fr) * 2012-06-13 2020-01-15 NGK Insulators, Ltd. Substrat composite
JP6190671B2 (ja) * 2013-09-05 2017-08-30 古河電気工業株式会社 ダイシング用粘着テープおよび半導体装置の製造方法
JP6196859B2 (ja) * 2013-09-18 2017-09-13 クアーズテック株式会社 ウエハ搭載用部材
JP5781254B1 (ja) * 2013-12-25 2015-09-16 日本碍子株式会社 ハンドル基板、半導体用複合基板、半導体回路基板およびその製造方法
JP6216727B2 (ja) 2014-05-08 2017-10-18 東京応化工業株式会社 支持体分離方法
JP6425606B2 (ja) * 2015-04-06 2018-11-21 株式会社ディスコ ウエーハの生成方法
JP6450634B2 (ja) * 2015-04-13 2019-01-09 株式会社ディスコ テープ剥離装置
JP2017041391A (ja) * 2015-08-21 2017-02-23 旭硝子株式会社 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法
JP6202696B2 (ja) * 2016-08-30 2017-09-27 国立大学法人埼玉大学 単結晶基板製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201216333A (en) * 2010-06-29 2012-04-16 Ushio Electric Inc Laser lift-off method and laser lift-off apparatus
JP2014056863A (ja) * 2012-09-11 2014-03-27 Fuji Electric Co Ltd 半導体装置の製造方法
JP2018117060A (ja) * 2017-01-19 2018-07-26 株式会社ブイ・テクノロジー 剥離基板及びレーザリフトオフ方法

Also Published As

Publication number Publication date
WO2020195932A1 (fr) 2020-10-01
TW202103217A (zh) 2021-01-16
JPWO2020195932A1 (fr) 2020-10-01
JP7430704B2 (ja) 2024-02-13
CN113544819B (zh) 2024-01-05
CN113544819A (zh) 2021-10-22

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