JP7416814B2 - アレイ基板及びその製造方法並びに表示パネル - Google Patents
アレイ基板及びその製造方法並びに表示パネル Download PDFInfo
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- JP7416814B2 JP7416814B2 JP2021548262A JP2021548262A JP7416814B2 JP 7416814 B2 JP7416814 B2 JP 7416814B2 JP 2021548262 A JP2021548262 A JP 2021548262A JP 2021548262 A JP2021548262 A JP 2021548262A JP 7416814 B2 JP7416814 B2 JP 7416814B2
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- 239000000758 substrate Substances 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010409 thin film Substances 0.000 claims description 79
- 229910052751 metal Inorganic materials 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 18
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 10
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 9
- 101100214491 Solanum lycopersicum TFT3 gene Proteins 0.000 description 9
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910001069 Ti alloy Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000747 poly(lactic acid) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004626 polylactic acid Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136259—Repairing; Defects
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Description
基板と、
前記基板上に設けられる第1金属層であって、間隔をおいて設けられる共通電極と走査線とを含み、前記共通電極が第1枠体と前記第1枠体内に設けられる配線体とを含み、前記配線体と前記第1枠体とが絶縁されて間隔をおいて設けられる第1金属層と、
前記第1金属層上に設けられる第1絶縁層と、
前記第1絶縁層上に設けられる第2金属層であって、間隔をおいて設けられるデータ線と共有電極とを含み、前記走査線と前記データ線とが交差して設けられて画素領域を形成し、前記共有電極と前記配線体とが重ねて設けられる第2金属層と、
前記第2金属層上に設けられる第2絶縁層と、
前記第2絶縁層上に設けられる画素電極層であって、前記画素領域内に対応して設けられる画素電極を含む画素電極層と、
を含む、アレイ基板を提供する。
前記第1部分の前記基板が位置する平面における正射影が、前記配線体の前記基板が位置する平面における正射影内に位置する。
前記第1薄膜トランジスタ、前記第2薄膜トランジスタ及び前記第3薄膜トランジスタのゲートが対応する同一の前記走査線にそれぞれ接続され、前記第1薄膜トランジスタ及び前記第2薄膜トランジスタのソースが対応する同一の前記データ線にそれぞれ接続され、前記第3薄膜トランジスタのソースが前記第2薄膜トランジスタのドレインに接続され、前記第1薄膜トランジスタのドレインが前記主画素電極に接続され、前記第2薄膜トランジスタのドレインが前記副画素電極に接続され、前記第3薄膜トランジスタのドレインが前記共有電極に接続される。
前記折り曲げ部の一部と前記第1枠体とが重ねて設けられる。
基板上に第1金属層を形成し、前記第1金属層が、間隔をおいて設けられる共通電極と走査線とを含み、前記共通電極が第1枠体と、前記第1枠体内に設けられる配線体とを含み、前記配線体と前記第1枠体とが絶縁されて間隔をおいて設けられるステップと、
前記第1金属層上に第1絶縁層を形成するステップと、
前記第1絶縁層上に第2金属層を形成し、前記第2金属層が、間隔をおいて設けられるデータ線と共有電極とを含み、前記走査線と前記データ線とが交差して設けられて画素領域を形成し、前記共有電極と前記配線体とが重ねて設けられるステップと、
前記第2金属層上に第2絶縁層を形成するステップと、
前記第2絶縁層上に画素電極層を形成し、前記画素電極層が、前記画素領域内に対応して設けられる画素電極を含むステップと、含むアレイ基板の製造方法に関する。
前記マスク板が前記第1枠体を形成するための第1パターンと、前記配線体を形成するための第2パターンとを含み、前記第2パターンが前記第1パターンの内側に設けられて、前記第1パターンと間隔をおいて設けられ、
前記第2パターンが第1開口と、前記第1開口の四隅領域に連通する第2開口とを含み、
前記第1開口が矩形状であり、前記第1開口が前記配線体の領域に対応し、前記第2開口が前記配線体の四隅領域の外側に対応する。
前記第1開口は、2つの対向配置される第1辺と、2つの対向配置される第2辺とを含み、一方の前記第1辺が2つの前記第2辺の一端に接続され、他方の前記第1辺が2つの前記第2辺の他端に接続され、前記第2辺の延在方向が前記第3パターンの延在方向と平行であり、前記第1辺の延在方向が前記第2辺の延在方向と垂直であり、
前記配線体の端面から前記配線体の中間領域に向かう方向において、前記配線体の幅が等しくなるように、前記第2開口の一部が前記第1辺から突出し、前記第2開口の一部が前記第2辺から突出する。
前記アレイ基板は、
基板と、
前記基板上に設けられる第1金属層であって、間隔をおいて設けられる共通電極と走査線とを含み、前記共通電極が第1枠体と、前記第1枠体内に設けられる配線体とを含み、前記配線体と前記第1枠体とが絶縁されて間隔をおいて設けられる第1金属層と、
前記第1金属層上に設けられる第1絶縁層と、
前記第1絶縁層上に設けられる第2金属層であって、間隔をおいて設けられるデータ線と共有電極とを含み、前記走査線と前記データ線とが交差して設けられて画素領域を形成し、前記共有電極と前記配線体とが重ねて設けられる第2金属層と、
前記第2金属層上に設けられる第2絶縁層と、
前記第2絶縁層上に設けられる画素電極層であって、前記画素領域内に対応して設けられる画素電極を含む画素電極層と、を含む。
前記第1部分の前記基板が位置する平面における正射影が、前記配線体の前記基板が位置する平面における正射影内に位置する。
前記第1薄膜トランジスタ、前記第2薄膜トランジスタ及び前記第3薄膜トランジスタのゲートが対応する同一の前記走査線にそれぞれ接続され、前記第1薄膜トランジスタ及び前記第2薄膜トランジスタのソースが対応する同一の前記データ線にそれぞれ接続され、前記第3薄膜トランジスタのソースが前記第2薄膜トランジスタのドレインに接続され、前記第1薄膜トランジスタのドレインが前記主画素電極に接続され、前記第2薄膜トランジスタのドレインが前記副画素電極に接続され、前記第3薄膜トランジスタのドレインが前記共有電極に接続される。
前記折り曲げ部の一部と前記第1枠体とが重ねて設けられる。
ステップB11:基板上に第1金属層を形成する。前記第1金属層は、間隔をおいて設けられる共通電極と走査線とを含み、前記共通電極は、第1枠体と前記第1枠体内に設けられる配線体とを含む。前記配線体と前記第1枠体とが絶縁されて間隔をおいて設けられる。
ステップB12:前記第1金属層上に第1絶縁層を形成する。
ステップB13:前記第1絶縁層上に第2金属層を形成する。前記第2金属層は、間隔をおいて設けられるデータ線と共有電極とを含み、前記走査線と前記データ線とが交差して設けられて画素領域を形成する。前記共有電極と前記配線体とが重なり合うように配置される。
ステップB14:前記第2金属層上に第2絶縁層を形成する。
ステップB15:前記第2絶縁層上に画素電極層を形成する。前記画素電極層は、前記画素領域内に対応して設けられる画素電極を含む。
Claims (13)
- 基板と、
前記基板上に設けられる第1金属層であって、間隔をおいて設けられる共通電極と走査線とを含み、前記共通電極が第1枠体と前記第1枠体内に設けられる配線体とを含み、前記配線体と前記第1枠体とが絶縁されて間隔をおいて設けられる第1金属層と、
前記第1金属層上に設けられる第1絶縁層と、
前記第1絶縁層上に設けられる第2金属層であって、間隔をおいて設けられるデータ線と共有電極とを含み、前記走査線と前記データ線とが交差して設けられて画素領域を形成し、前記共有電極と前記配線体とが重ねて設けられる第2金属層と、
前記第2金属層上に設けられる第2絶縁層と、
前記第2絶縁層上に設けられる画素電極層であって、前記画素領域内に対応して設けられる画素電極を含む画素電極層と、
を含む、アレイ基板。 - 前記アレイ基板は、前記第1絶縁層上に設けられる活性層をさらに含み、前記第2金属層が前記活性層上に設けられ、前記活性層が前記配線体と重なる第1部分を含み、
前記第1部分の前記基板が位置する平面における正射影が、前記配線体の前記基板が位置する平面における正射影内に位置する、
請求項1に記載のアレイ基板。 - 前記配線体のパターンは、2つの対向配置される短辺と、2つの対向配置される長辺とを含み、一方の前記長辺が2つの前記短辺の一端に接続され、他方の前記長辺が2つの前記短辺の他端に接続され、前記短辺の延在方向が前記走査線の延在方向と平行であり、前記長辺の延在方向が前記短辺の延在方向と垂直である、
請求項2に記載のアレイ基板。 - 前記配線体の端面から前記配線体の中間領域に向かう方向において、前記配線体の幅が等しい、
請求項2に記載のアレイ基板。 - 前記配線体の2つの短辺のうち前記第1枠体に近い短辺から前記第1枠体までの垂直距離が4μm~8μmである、
請求項2に記載のアレイ基板。 - 前記共有電極が主線部を含み、前記画素電極が主画素電極を含み、前記主画素電極が第2枠体と、前記第2枠体内に接続される第1幹部とを含み、前記主線部、前記配線体及び前記第1幹部の延在方向が同じであり、前記主線部、前記配線体及び前記第1幹部が互いに重ねて設けられる、
請求項1に記載のアレイ基板。 - 前記配線体の幅が前記主線部の幅よりも大きい、
請求項6に記載のアレイ基板。 - 前記画素電極が副画素電極をさらに含み、前記アレイ基板は、隣り合う2つの前記画素領域の間に対応して設けられる第1薄膜トランジスタ、第2薄膜トランジスタ及び第3薄膜トランジスタを含み、
前記第1薄膜トランジスタ、前記第2薄膜トランジスタ及び前記第3薄膜トランジスタのゲートが対応する同一の前記走査線にそれぞれ接続され、前記第1薄膜トランジスタ及び前記第2薄膜トランジスタのソースが対応する同一の前記データ線にそれぞれ接続され、前記第3薄膜トランジスタのソースが前記第2薄膜トランジスタのドレインに接続され、前記第1薄膜トランジスタのドレインが前記主画素電極に接続され、前記第2薄膜トランジスタのドレインが前記副画素電極に接続され、前記第3薄膜トランジスタのドレインが前記共有電極に接続される、
請求項6に記載のアレイ基板。 - 前記共有電極は、隣り合う2つの前記主線部の間に接続される折り曲げ部をさらに含み、前記折り曲げ部が前記第1薄膜トランジスタ、前記第2薄膜トランジスタ及び前記第3薄膜トランジスタの外側に対応して設けられ、
前記折り曲げ部の一部と前記第1枠体とが重ねて設けられる、
請求項8に記載のアレイ基板。 - 基板上に第1金属層を形成し、前記第1金属層が、間隔をおいて設けられる共通電極と走査線とを含み、前記共通電極が第1枠体と、前記第1枠体内に設けられる配線体とを含み、前記配線体と前記第1枠体とが絶縁されて間隔をおいて設けられるステップと、
前記第1金属層上に第1絶縁層を形成するステップと、
前記第1絶縁層上に第2金属層を形成し、前記第2金属層が、間隔をおいて設けられるデータ線と共有電極とを含み、前記走査線と前記データ線とが交差して設けられて画素領域を形成し、前記共有電極と前記配線体とが重ねて設けられるステップと、
前記第2金属層上に第2絶縁層を形成するステップと、
前記第2絶縁層上に画素電極層を形成し、前記画素電極層が、前記画素領域内に対応して設けられる画素電極を含むステップと、
を含む、
アレイ基板の製造方法。 - マスク板を用いて前記第1金属層を形成し、
前記マスク板が前記第1枠体を形成するための第1パターンと、前記配線体を形成するための第2パターンとを含み、前記第2パターンが前記第1パターンの内側に設けられて、前記第1パターンと間隔をおいて設けられ、
前記第2パターンが第1開口と、前記第1開口の四隅領域に連通する第2開口とを含み、
前記第1開口が矩形状であり、前記第1開口が前記配線体の領域に対応し、前記第2開口が前記配線体の四隅領域の外側に対応する請求項10に記載のアレイ基板の製造方法。 - 前記マスク板は、前記第1パターンの外側に設けられて、前記走査線を形成するための第3パターンをさらに含み、
前記第1開口は、2つの対向配置される第1辺と、2つの対向配置される第2辺とを含み、一方の前記第1辺が2つの前記第2辺の一端に接続され、他方の前記第1辺が2つの前記第2辺の他端に接続され、前記第2辺の延在方向が前記第3パターンの延在方向と平行であり、前記第1辺の延在方向が前記第2辺の延在方向と垂直であり、
前記第2開口の一部が前記第1辺から突出し、前記第2開口の一部が前記第2辺から突出する、
請求項11に記載のアレイ基板の製造方法。 - カラーフィルタ基板及び請求項1~9のいずれか一項に記載のアレイ基板を含む、表示パネル。
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